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  • 1
    Electronic Resource
    Electronic Resource
    Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6917-6919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photon emission induced by the drain avalanche in polycrystalline silicon thin-film transistors (polysilicon TFTs) has been studied in wide drain and gate voltage ranges. As the photon emission phenomenon is closely related to hot-carrier effects, the gate and drain bias conditions for maximum device degradation have been determined from measurements of the emitted light intensity. In n-channel polysilicon TFTs, the effects of bias stressing at the maximum light emission are related to hot-hole trapping into the gate oxide near the drain and to formation of acceptor-like interface states consisted of midgap states and band tails. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370105
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  • 2
    Electronic Resource
    Electronic Resource
    1/fγ noise in polycrystalline silicon thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3934-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon thin-film transistors show a 1/fγ (with γ〈1) low frequency noise behavior. The 1/fγ noise is explained by emission and trapping processes of carriers between trapping states located within an energy range of kT around the Fermi level and the exponential tail states. We have derived a simple relationship between the frequency index γ of the noise spectrum and the energy distribution parameter of the tail states. From the experimental noise data, the theoretical model allows us to determine the tail states energy distribution and the grain boundary trap density. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369770
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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