ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this paper, we investigate the evolution of extended defects during a millisecondFlash anneal after a preamorphising implant. The experimental results, supported by predictivesimulations, indicate that during the ultra-fast temperature ramp-up and rump-down occurring in amillisecond Flash anneal, the basic mechanisms that control the growth and evolution of extendeddefects are not modified with respect to the relatively slower annealing processes, such as “soak”and “spike” Rapid Thermal Annealing. In addition, we have observed a decrease in the number oftrapped interstitials in the End-Of-Range (EOR) defects when decreasing the Ge+ amorphisationenergy from 30 keV down to 2 keV. This result is ascribed to two concomitant phenomena: (i) theincrease of the initial number of interstitials, Ni, created by the amorphisation step, when theimplant energy is decreased and (ii) the efficient interstitial annihilation at the silicon surface, whoserecombination length, Lsurf, is in the nanometer range even at the very high temperatures employedin millisecond Flash anneals
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.573-574.269.pdf
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