Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 16-18
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Lattice-matched double-heterostructure (DH) PbEuSeTe lasers were grown by molecular beam epitaxy (MBE) on (100) oriented PbTe substrates. Grooved mesa structures with 17–25 μm wide stripes and 0.75 μm thick Pb1−xEuxSeyTe1−y active layers with 0≤x≤0.031 were fabricated. DH diode lasers with a PbTe active layer reached a maximum cw operation temperature of 175 K which equals the highest operation temperature achieved so far by a side optical cavity (SOC) single quantum well (SQW) PbTe/PbEuSeTe laser. The threshold current density of 3.9 A/cm2 measured for this laser at 15 K is, to our knowledge, the lowest ever published for lead salt lasers. Comparison of MBE-grown DH lasers which utilize the lattice-matched PbTe/PbEuSeTe system to those utilizing the nonlattice-matched PbSe/PbEuSe system shows higher operation temperatures and by far lower threshold currents for the lattice-matched system.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101743
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