Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 4067-4069
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Continuous wave and pulsed optical beam induced current measurements were carried out on n-InP/n-InGaAs/n-InP double heterostructures which contain large areas of diffused InGaAs p-n junctions. The flat cw photocurrent and illumination-position independence of the transient photocurrent response, observed when the optical source spot illuminates a floating diode, demonstrates the effect of photocarrier spreading in a p-n junction. The very long photocarrier spreading length observed at low optical power may be an important parasitic coupling mechanism which should be considered in the isolation-design of integrated optoelectronic devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352830
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