Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 3467-3469
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Pb in GaAs introduces a DX center-like (metastable) defect level that is (229±16) meV above the Γ-conduction-band edge, in a similar energetic position to the Si and Sn related DX centers in GaAs. The persistent photoconductivity effect quenches at approximately 50 K, indicating that the barrier to capture for the Pb and Sn dopants are similar. Despite the quite different atomic parameters of the Pb atom compared with the Sn atom, no significant chemical shifts have been found.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109022
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