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  • 1
    Electronic Resource
    Electronic Resource
    Fluctuating deep-level trap occupancy model for 1/f noise in semiconductor resistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6279-6288 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative theoretical model for 1/f and low-frequency noise due to bulk traps in semiconductor resistors has been developed. The model is based on the fact that random fluctuations of the steady-state deep-level-trapped electron density, at some point in a depletion layer, decay exponentially with a relaxation time which depends on the local free electron density, the intrinsic properties of the semiconductor and the trap energy. The model, which is valid for relaxation times which are much longer than the free electron transit time, was applied to the case of a Schottky-barrier field effect resistor. Our results show that the low-frequency noise spectrum generated by deep-level traps with a broad spatial distribution throughout the depletion layer, is very sensitive to Fermi-Dirac trap statistics. The discrete distribution of flatband trap energy levels is the crucial parameter which determines the spectral density and range of the low-frequency noise. Monoenergetic traps generate a considerably broadened Lorentzianlike low-frequency noise spectrum which is highly sensitive to temperature. Traps with an arbitrary distribution over a set of discrete energy levels may exhibit 1/f noise or generic low-frequency noise. We deduce the condition that has to be satisfied in order for an arbitrary discrete distribution of bulk traps over energy to exhibit 1/f noise and derive an exact integral and approximate analytical expressions for the spectral density and range of bulk 1/f noise in semiconductors. The temperature dependence of the 1/f noise spectrum is discussed while in the process elucidating the subtle temperature-dependent relationship between 1/f and low-frequency noise arising from bulk traps. Experimentally observed low-frequency and 1/f noise characteristics are explicitly accounted for by the model. A qualitative argument for the application of the model to 1/f noise generated by surface traps is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346870
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Self-consistent resonant states and phase coherence in a wide double-barrier structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 359-361 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental tunneling current-voltage characteristics for a wide (1040-A(ring)-wide well) double-barrier structure; concomitant differential conductance data show a series of oscillations in the differential conductance-voltage characteristics. By using a self-consistent analysis, we show that the observed conductance oscillations arise predominantly from the structure of the local density of states of the confining well rather than the density of states of the global structure; this result shows that there is a lack of long-range phase coherence for the tunneling electrons in this structure. Also, in this analysis we determine the importance of the band nonparabolicity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100969
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental study of guided-wave modes in 1.3 μm InGaAsP light-emitting diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 343-345 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of an experimental study of the far-field characteristics of InGaAsP edge-emitting light-emitting diodes. Our results show that the asymmetric structure in the transverse far-field distribution of the device is caused by modes which are supported by the asymmetric dielectric waveguide. These modes propagate in the InP cladding layer with the higher refractive index at an angle to the fundamental mode. Their relative intensities, compared to the fundamental mode intensity, increase as the active layer thickness decreases below 0.1 μm, accounting for the observed concomitant decrease in the fiber-coupling efficiency of these devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101903
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Fluctuating deep level trap occupancy model for bulk 1/f noise in field-effect transistors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2217-2219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative theoretical model for bulk 1/f noise in semiconductor resistors has been developed. The model uses the fact that random fluctuations of the steady-state deep level trapped electron density at some point in a depletion layer decay exponentially with a time constant which depends on the local free-electron density. The model was used to derive an exact integral expression and a simple approximate analytic expression for the spectral density of bulk 1/f and generation noise in unsaturated field-effect transistors. Excellent agreement with experimental results is obtained. The relationship between bulk 1/f and generation noise spectra is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102065
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Back-gating effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2234-2236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature (LT) photoluminescence (PL) measurements on pseudomorphic modulation-doped transistors with a (LT) GaAs layer in the GaAs substrate have revealed the existence of a substrate voltage. The substrate voltage is manifested by a decrease in the PL transition energies of the quantum-well subbands due to the quantum confined Stark effect. Our results indicate that the substrate voltage is generated by the trapping of holes from the undoped molecular-beam-epitaxy-grown GaAs at the GaAs/LT GaAs interface by the high concentration of arsenic antisite defects in the LT GaAs layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117138
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    Paper (German National Licenses)
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