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  • 1
    Electronic Resource
    Electronic Resource
    Evidence of an interfacial layer formation during rare-earth deposition onto CdTe: The case of Sm (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 237-243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An interfacial layer (IL), about a nanometer thick, is produced by Sm deposition onto (001) CdTe grown by molecular-beam epitaxy. This IL is studied by reflection high-energy electron diffraction (RHEED), ion channeling, and x-ray diffraction. A correlation between the (1×2) RHEED pattern and the {111} CdTe stacking sequence is demonstrated, and is in favor of the surface Te dimerization hypothesis. Lattice location by ion channeling has revealed that incorporated Sm mainly occupies the octahedral site in the Te sublattice. A CdTe overlayer grown onto IL presents a remarkable feature, that is, a 90° rotation around the [001] direction with respect to the CdTe buffer. It was checked by ion channeling that the overlayer exhibited a bulklike crystallinity. Superlattices composed of many of these IL/CdTe basic periods have been grown at a temperature of 270 °C. The different experimental features are tentatively interpreted assuming the formation of an IL with the spinel structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354151
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  • 2
    Electronic Resource
    Electronic Resource
    Intermixing produced by ion implantation: Case of II–VI semiconductor multilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3706-3713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: II–VI semiconductor multilayers, containing a quantum well (ZnTe/CdTe/ZnTe or Cd0.6Hg0.4Te/HgTe/CdTe) have been implanted with Zn+ or Cd+ ions at different fluences and temperatures, and analyzed by Rutherford backscattering spectroscopy and channeling. Direct backscattering of channeled ions (He+) experiments show that the density of crystalline defects in the well increases with the fluence and the temperature of implantation, and confirms that layer intermixing takes place. A model has been used to link the accumulation of defects to vacancy trapping in the region where the vacancy free enthalpy is minimized; it happens that in the cases under study this trapping corresponds to a decrease of the elastic energy of the strained layer. Intermixing rules have also been analyzed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359949
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  • 3
    Electronic Resource
    Electronic Resource
    Polarity determination in compound semiconductors by channeling: Application to heteroepitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1502-1504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A direct method for polarity determination of the compound semiconductor (111) face is presented. Channeling shows that the (111)B CdTe face (or Te face) corresponds to the best (111) face for further II-VI epitaxy. Epitaxial relationships are also determined for (111)CdTe/(001) GaAs. It is determined that the (111)CdTe layer also ends up on a B face. The bond directions of Ga and As atoms are determined with respect to those of Te and Cd. These informations suggest a mechanism for such an epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99112
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  • 4
    Electronic Resource
    Electronic Resource
    Strain relaxation in low lattice mismatch epitaxy of CdTe/Cd0.97Zn0.03Te (001) by channeling (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1874-1876 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement of the misfit dislocation density at the CdTe(001)/Cd0.97Zn0.03Te (001) interface has been obtained by channeling. This method allows an accurate determination of the critical thickness (390 nm) and appears sensitive for misfit dislocation density determination in systems with lattice mismatch as low as Δa/a(approximately-equal-to)3×10−4. The formation energy of misfit dislocations is estimated to be about 10−8 J/m.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99610
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  • 5
    Electronic Resource
    Electronic Resource
    Study of epitaxial growth of ZnTe on GaAs (001) by channeling (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 637-641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Channeling is used to describe defects associated with molecular-beam epitaxy growth of (001) ZnTe on (001) GaAs. A high dislocation density (2×1011/cm2) is found in the immediate vicinity of the interface, in addition to misfit dislocations at the interface. Channeling is found to be a strain sensitive method useful for misfit dislocation analysis. Direct scattering on misfit dislocations together with elastic theory calculations reveals that the extent of the misfit dislocation elastic field increases with the interface roughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341953
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  • 6
    Electronic Resource
    Electronic Resource
    Mechanisms of phase transformation in low-temperature irradiated NiAl (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1499-1504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase transformations induced by low-temperature (15 K), heavy- (Xe) and light- (D) ion irradiation of a monocrystalline NiAl intermetallic compound are investigated via in situ Rutherford backscattering and channeling experiments. Total amorphization of the irradiated layer is observed, whatever the irradiation ion mass, as soon as a mean number of displacements per atom of 0.3–0.4 is reached. On the contrary, the mechanisms of phase transformation appear to be strongly dependent on the cascade regime. Light-ion irradiation leads to a sigmoidal shape of the amorphization kinetics, suggesting that amorphization takes place by a defect accumulation process. Heavy-ion irradiation shows a more complex behavior with the formation of a premartensitic phase prior to amorphization. An interpretation of this new type of phase transformation is presented in terms of defect cascade disordering and damage-induced stresses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342964
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  • 7
    Electronic Resource
    Electronic Resource
    Strain in self-implanted silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 161-165 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct measurements of perpendicular strain by channeling presented here show that self-implantations (50 keV at 20 K) at dose levels up to amorphization of silicon induce a uniaxial elongation of the lattice parameter. The maximum strain is proportional to the implanted dose up to the amorphous threshold, and the strain varies with depth as the nuclear energy distribution. The relation of such an elongation to the co-existence of disordered amorphous (clusters) and crystalline phases in the implanted layer is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338849
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  • 8
    Electronic Resource
    Electronic Resource
    Channeling analysis of mismatch strain in heteroepitaxial CdTe on Cd0.96Zn0.04Te(001) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3718-3721 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Channeling is used to study how the lattice mismatch between CdTe layers grown by molecular-beam epitaxy on Cd0.96Zn0.04Te(001) is accommodated. Planar channeling allows us to determine the tetragonal distortion of the cubic lattice for layer thicknesses lower than the 300-nm critical thickness. Above 300 nm, planar channeling reveals misfit dislocations at the interface. A discussion of absolute strain measurement by channeling is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339254
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  • 9
    Electronic Resource
    Electronic Resource
    Deuterium location and migration in metals: Comparison of implantation and solid solution (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 108-119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice location of deuterium has been investigated by channeling in fcc, hcp, and bcc metals. Implanted deuterium is studied in the range 15 K up to the release temperature and its site is compared to that of dissolved deuterium (α phase). After implantation, the octahedral and tetrahedral sites are distorted and deuterium can be displaced inside these cells. This distortion explains why implanted deuterium occupies a displaced site within the tetrahedral cell in bcc metals and not the pure tetrahedral site as for dissolved deuterium. The vacancy-deuterium interaction cannot account for all the experimental results. The trapping of implanted deuterium is described in terms of the stress induced by extended implantation defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336850
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  • 10
    Electronic Resource
    Electronic Resource
    Amorphous phase formation in Ni3B by low-temperature deuterium implantation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 722-725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphous phase formation in Ni3B single crystals implanted at 15 K with deuterium ions is studied via in situ Rutherford backscattering and channeling experiments, and the lattice site of implanted deuterium was determined by using the D(3He,p)4He nuclear reaction. The amorphization kinetics is found to present a sigmoidal shape, indicating that amorphization results from a defect-accumulation mechanism. At D fluences below the amorphization threshold, implanted D atoms are located in interstitial sites of the Ni3B orthorhombic structure, while they are trapped in the strained region between amorphous clusters as soon as amorphization occurs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340063
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