Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
78 (1995), S. 3706-3713
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
II–VI semiconductor multilayers, containing a quantum well (ZnTe/CdTe/ZnTe or Cd0.6Hg0.4Te/HgTe/CdTe) have been implanted with Zn+ or Cd+ ions at different fluences and temperatures, and analyzed by Rutherford backscattering spectroscopy and channeling. Direct backscattering of channeled ions (He+) experiments show that the density of crystalline defects in the well increases with the fluence and the temperature of implantation, and confirms that layer intermixing takes place. A model has been used to link the accumulation of defects to vacancy trapping in the region where the vacancy free enthalpy is minimized; it happens that in the cases under study this trapping corresponds to a decrease of the elastic energy of the strained layer. Intermixing rules have also been analyzed. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359949
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