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  • 1
    Electronic Resource
    Electronic Resource
    An effective barrier against the interdiffusion of iron and zinc dopants in InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3593-3599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of iron and zinc in InP is studied with secondary-ion mass spectrometry (SIMS). Intentionally doped metalorganic-vapor-phase-epitaxy- (MOVPE-) grown layers as well as ion-implanted samples were investigated. In addition, resistivity measurements were performed on MOVPE-grown, iron-doped InP layers. The diffusion behavior of iron is strongly influenced by the presence of zinc and vice versa. In adjacent regions of iron and zinc-doped layers of InP there is a dramatic interdiffusion of both dopants. The interdiffusion process can be described with a kick-out mechanism in which iron interstitials kick out substitutional zinc. The diffusion of the iron interstitials is an extremely fast transport process in InP, but the concentration of iron interstitials remains below 5×1014 at cm−3. Due to this fast transport, the interdiffusion process proceeds even through barrier layers of (undoped) InP, while in the barrier layer itself the iron concentration remains below the SIMS detection limit (〈5×1014 at cm−3). A sulphur-doped, n-type layer of InP stops the diffusion of iron. The semi-insulating properties of iron-doped layers of InP are affected by the interdiffusion process of iron and zinc. Since sulphur-doped InP inhibits the interdiffusion, such a layer can be applied as a barrier layer to separate zinc-doped and iron-doped regions in InP and thus preserve the semi-insulating character of the iron-doped InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349255
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  • 2
    Electronic Resource
    Electronic Resource
    Zinc-stimulated outdiffusion of iron in InP (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 146-147 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resistivity InP (108 Ω cm) can be grown by means of metal organic vapor phase epitaxy using ferrocene as a dopant source. Adjacent zinc-doped layers of InP annihilate the resistivity of the (intentionally) iron-doped InP. The presence of Zn dramatically enhances outdiffusion of iron out off intentionally iron-doped layers of InP into the Zn-doped InP. Diffusion of Zn into the iron-doped InP is also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103058
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  • 3
    Electronic Resource
    Electronic Resource
    Interstitial and substitutional Zn in InP and InGaAsP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 553-560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Closed-ampoule Zn diffusion in InP results in a net acceptor concentration that is much smaller than the Zn concentration. After subsequent annealing of InP in an atmosphere without Zn, the Zn and net acceptor concentrations have become almost identical, due to a decreased Zn concentration and an increased net acceptor concentration. The annealing treatment gives rise to a decreased contact resistivity. The diffusion depth has not changed. Annealing with a SiN cap on the InP surface does not have this effect on the concentrations. These annealing effects also take place in InGaAsP on InP layers. The results can be explained quantitatively by assuming that Zn is incorporated as both substitutional acceptors and interstitial donors and that only the interstitial Zn is driven out by the annealing, owing to its large diffusion coefficient. Profiles calculated with this interstitial-substitutional model can be fitted to experimental profiles assuming Zn to diffuse as singly ionized interstitial donors. This model can also describe earlier reported results on Zn diffusion in n-type InP for which a profile cutoff is found at a depth where the acceptor concentration equals the background donor concentration and in which the acceptor solubility is higher than in undoped InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343140
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  • 4
    Electronic Resource
    Electronic Resource
    Zinc diffusion in InGaAsP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3468-3471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ampoule diffusion of Zn in undoped liquid phase epitaxial InGaAsP layers between 425 and 525 °C shows the Zn solubility, as measured with secondary ion mass spectrometry, to be much larger than in InP and to be slightly less than in GaAs. The acceptor concentration, as determined by capacitance-voltage measurements, is 60%–90% of the Zn concentration. Incorporation and diffusion of Zn can be described with the interstitial-substitutional model. The difference between the acceptor and Zn concentrations can be explained by compensating Zn interstitial donors or by neutral Zn-vacancy complexes. The diffusion depth is slightly smaller than in InP and much larger than in GaAs. In n-type InGaAsP, profiles are found with a cut-off similar to the behavior in InP. The solubility is higher than in undoped InGaAsP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341480
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  • 5
    Electronic Resource
    Electronic Resource
    Zn diffusion-enhanced disordering and ordering of InGaAsP/InP quantum well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2919-2926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of zinc diffusion on InGaAsP/InP single and multiple quantum well structures was studied by secondary ion mass spectrometry (sims), Auger electron spectroscopy (AES), capacitance-voltage measurements, photoluminescence, and x-ray diffraction. Significant interdiffusion of In and Ga is found. The structures are stale against annealing without the presence of zinc. Interdiffusion of As and P is negligible. In a multiple quantum well Zn diffusion at 500 °C causes In and Ga intermixing: The AES profiles have become flat. At higher diffusion temperatures an ordering is found such that now the Ga concentration is at a maximum in the original InP layers. This can be explained by minimization of the free energy, which is balanced by an increasse in mismatch strain energy. Photoluminescence shows the interdiffusion starts at temperatures above 420 °C. By the Zn diffusion the lattice parameter values of the InGaAsP and InP layers are changed and the average value is decreased, as was shown by x-ray diffraction on a multiple quantum well structure. This is substantiated by results of x-ray rocking curves.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345410
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  • 6
    Electronic Resource
    Electronic Resource
    Post-implantation as an aid in scale calibration for SIMS depth profiling (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 781-786 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: It is shown that low-dose energetic ion implantation may greatly facilitate relative and even absolute depth-scale calibration for SIMS depth profiling. Sample implantation has to follow all the processing steps to be investigated. The implantation conditions, such as species, fluence and energy, preferably have to be optimized for the particular problem at hand. Then the distribution profile of the implant is to be treated as a two-dimensional marker, useful both for depth as well as for concentration calibration. A simple practical example demonstrates the power of the method.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740141115
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