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  • 1
    Electronic Resource
    Electronic Resource
    Model for the above-threshold characteristics and threshold voltage in polycrystalline silicon transistors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2463-2467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new theory of polycrystalline silicon thin-film transistors is proposed, based on a continuous trap state density. Three different regimes are predicted: subthreshold, transitional, and crystallinelike. Two characteristic voltages are identified: the threshold voltage, corresponding to the condition of equal trapped and free charge concentration at the oxide/semiconductor interface and the on-voltage, corresponding to the condition of equal trapped and free charge in the whole space-charge region. In the case of an exponential distribution of gap states, approximated analytical expressions can be deduced and a simple accurate fitting procedure is presented. A very good agreement with the experiment is obtained, confirming the importance of taking into account the detailed energy dependence of the trap distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346507
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of hot-carrier induced interface state density in polycrystalline silicon thin-film transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2341-2348 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polysilicon thin-film transistors are of great interest for their application in large area microelectronics and especially for their circuit applications. A successful circuit design requires a proper understanding of the electrical characteristics and in the present work some specific aspects related to the hot-carrier induced electrical instabilities are presented. In particular, generation of interface states near the drain junction occurs when the devices are operated for a prolonged time in the so-called kink regime. In the present work we show both experimentally and by numerical simulations how the presence of such interface states affects the electrical characteristics. Furthermore, a novel simple method is proposed to extract, from the analysis of the sheet conductances, the interface state density. The hot-carrier induced interface state density relative to the present devices shows a featureless continuous distribution. Reduction of the generated interface states is observed if trapped holes are annihilated by electron capture. These results suggest that the interface states are induced by the presence of trapped holes, in agreement with similar data reported for c-Si metal–oxide–semiconductor structures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368302
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  • 3
    Electronic Resource
    Electronic Resource
    Transient current response in Pd-SiO2-Si structures during hydrogen absorption and desorption (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3931-3932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient current measurements have been performed on Pd-gate metal-oxide-semiconductor capacitors at zero bias and room temperature, during hydrogen absorption and desorption. It is shown that a simple relationship among transient current, flat-band voltage, and time-dependent capacitance can fit the experimental data. Different possible origins of the transient current phenomenon are considered and discussed and the role played by the Na+ in delaying the transient current response is also illustrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335565
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependence of the transfer characteristics of polysilicon thin film transistors fabricated by excimer laser crystallization (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 616-618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transfer characteristics of polysilicon thin film transistors have been measured in the temperature range from 400 to 80 K. The active layer has been made by excimer laser crystallization of amorphous silicon. The devices show high field-effect mobility values (〉200 cm2/V s), even at low temperature. The electrical characteristics have been analyzed using a uniformly distributed density of states (DOS) model. The DOS has been derived using the values of the conductance at various temperatures. Using the DOS derived from the "temperature method," we have calculated the transfer characteristics and the threshold voltage versus temperature, obtaining a very good agreement with experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369414
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  • 5
    Electronic Resource
    Electronic Resource
    Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1394-1396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Si films deposited by the low pressure chemical vapor deposition from disilane, and subsequently subjected to a combined furnace annealing at 600 °C/12 h and a sequential excimer laser annealing, results to polycrystalline silicon films with very large grains, low in-grain defect density, and smooth-free surface. Large but heavily defected grains are produced by the furnace annealing, the in-grain defects are mainly microtwins, which are eliminated by a combined liquid–solid state process induced by the laser annealing. The two-step annealing provides a very high quality polycrystalline material suitable for thin-film transistor application. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113212
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  • 6
    Electronic Resource
    Electronic Resource
    Dispersive charge injection model for hydrogenated amorphous silicon/amorphous silicon dioxide thin-film transistor instability (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 826-828 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bias stress measurements at different temperatures and stress voltage have been performed on a-Si:H thin-film transistors, where very thin (18 nm) plasma deposited a-SiO2 was used as gate insulator. The data are explained on the basis of dispersive charge injection into the first 2–3 nm of the gate insulator. According to the proposed model a new functional form for the threshold voltage shift kinetics is deduced and a very good agreement with the experimental data is found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105275
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  • 7
    Electronic Resource
    Electronic Resource
    Evidence of carrier number fluctuation as origin of 1/f noise in polycrystalline silicon thin film transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1730-1732 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the noise performances of polycrystalline silicon thin film transistors is presented. The drain current spectral density of these devices shows an evident 1/ f behavior and scales, when operating in the linear regime, with the square of the mean value of the drain current. The origin of the noise can be ascribed to carrier number fluctuations related to the dynamic trapping and detrapping of the oxide traps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115031
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  • 8
    Electronic Resource
    Electronic Resource
    Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1564-1566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-energy (100 eV) hydrogen-ion bombardment effects on a-SiO2 have been investigated by using synchrotron radiation photoemission spectroscopies. The argon bombardment effects have also been studied, in order to discriminate between physical and chemical characters in the hydrogen/a-SiO2 interaction. Our results show that hydrogen treatment produces predominantly Si-H defects, which are observed to induce gap states in a-SiO2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107252
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  • 9
    Electronic Resource
    Electronic Resource
    Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1216-1218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modifications of noise performances induced by hot-carrier degradation in polycrystalline silicon thin-film transistors, made by excimer laser crystallization, are presented. In particular, the normalized drain current spectral density of these devices shows an evident 1/f behavior, and as the device characteristics are degraded by prolonged bias stressing, the noise performances worsen. Hot-carrier degradation results in the formation of both interface states, that have been evaluated through the analysis of the sheet conductance, as well as of oxide traps near the insulator/semiconductor interface, as evidenced by the 1/f noise measurements. A strong correlation between interface state and oxide trap densities has been found, suggesting a common origin for the generation mechanism of the two types of defects. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119855
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  • 10
    Electronic Resource
    Electronic Resource
    Noise performances in polycrystalline silicon thin-film transistors fabricated by excimer laser crystallization (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 578-580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the noise performances of polycrystalline silicon (polysilicon) thin-film transistors (TFTs) made by excimer laser crystallization is presented. The drain current spectral density of these devices shows an evident 1/f behavior and the origin of the noise was attributed to carrier number fluctuations. The flat-band voltage spectral density was found to be strongly correlated with the field-effect mobility, suggesting that the microscopic mechanism causing the carrier number fluctuations involves the localized states present at the grain boundaries. The noise level in the devices with the best electrical characteristics is comparable with that observed in c-Si metal–oxide–semiconductor field effect transistors, a major improvement if compared to polysilicon TFTs made by solid-phase crystallization. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119799
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