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  • 1
    Electronic Resource
    Electronic Resource
    Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 987-992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration (2.2×1017, 4.5×1017, and 1.5×1018 cm−3) have been studied by means of the electron-beam-induced-current (EBIC) mode of scanning electron microscopy and of the surface photovoltage (SPV) method. The morphology and electrical activity of the defects observed across each wafer have been correlated to the formation and distribution of deep electronic levels, which are significantly affected by the tellurium concentration. The diffusion length has been found to be mainly controlled by deep levels associated with dislocations. EBIC localized measurements of L and of the net ionized free-carrier concentration provide evidence for the influence of Te concentration on impurity segregation at complex defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357783
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  • 2
    Electronic Resource
    Electronic Resource
    The EL2 trap in highly doped GaAs:Te (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6592-6595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated highly doped GaAs:Te at different doping concentrations ((approximately-greater-than)1017 cm−3) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360480
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  • 3
    Electronic Resource
    Electronic Resource
    Defects introduced in cadmium telluride by γ irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4664-4666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties peculiar to high resistivity CdTe:Cl are of great interest because of its application as a radiation detector. The compensation process responsible for the materials semi-insulating character implies the presence in the lattice of impurities and defects which have not yet been thoroughly characterized. The use of CdTe:Cl as a detector exposes the material to high fluxes of ionizing radiation which alter the crystal stoichiometry and affect the resulting electrical and optical properties, but few and scattered experimental data are available about radiation effects on this compound. In this work we have carried out an extensive investigation of the effects of γ irradiation on CdTe:Cl by photoinduced current transient spectroscopy analyses. We have identified the deep levels with activation energies up to midgap and we have followed their evolution with increasing irradiation doses up to 50 kGy, the dose which totally degrades the material detecting properties. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351859
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  • 4
    Electronic Resource
    Electronic Resource
    Role of impurities on diffusion-induced defective states (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5622-5627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defective states induced in floating zone Si by the heavy diffusion of dopants have been investigated by means of the electron beam-induced current method. By measuring the minority carrier diffusion length with the first order moment method, and by directly imaging the defects, their electrical activity has been analyzed. The diffused samples have subsequently been dry oxidized, so that the evolution of the electrical and morphological properties of the induced defects could be followed. Two sets of samples, one diffused with B and the other with B and Al, have been investigated in order to study the effects of the presence of Al. Significant improvements in the diffusion length have been observed in samples where Al had been codiffused, thus providing indication for the role played by Al on the electrical activity of bulk defective states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351962
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  • 5
    Electronic Resource
    Electronic Resource
    Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5964-5968 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion length and surface recombination velocity of the minority carriers are determined from electron beam induced current (EBIC) profiles on a semiconductor containing a barrier perpendicular to the scanned surface. The evaluation of both the parameters has been obtained by the procedure called "of the first moments,'' due to Donolato [C. Donolato, Appl. Phys. Lett. 43, 120 (1983)], which is based on the calculation of the first moment about the origin of two induced current profiles. This analysis, based on an exact integral property of the EBIC scans, allows evaluation of the diffusion length and the surface recombination without fitting the experimental profiles. In addition, it is easy to handle and can also be readily applied to real devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350447
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  • 6
    Electronic Resource
    Electronic Resource
    Deep energy levels in CdTe and CdZnTe (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2121-2126 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods, which can be applied to semi-insulating materials, allow to characterize the deep traps located up to midgap and can determine whether they are hole or electron traps. We have identified 12 different traps, some common to all the investigated samples, some peculiar to one of them. A comparison of the results obtained from the various materials is given and the status of defect models is reviewed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366946
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  • 7
    Electronic Resource
    Electronic Resource
    Deep levels and compensation in γ-irradiated CdZnTe (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3212-3214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of detector-grade Cd0.9Zn0.1Te in a radiation-hostile environment has been investigated by studying the effects on the material defective states induced by γ irradiation. The detector performance is strongly affected by the presence of charge-trapping centers which may also intervene in the material compensation properties. We have investigated by photoinduced current transient spectroscopy analyses the evolution with increasing irradiation dose of the deep levels both present in the as-grown material and induced by the ionizing radiation. A significant correlation between the material resistivity and some deep levels behavior has been observed. We have compared this trend to the results obtained from γ-irradiated CdTe:Cl to better understand the role deep traps play in the compensation process of II–VI materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324980
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  • 8
    Electronic Resource
    Electronic Resource
    Comparison of electrical and luminescence data for the A center in CdTe (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3510-3512 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electrical and optical properties of the deep levels responsible for the 1.4–1.5 eV luminescence band usually observed in II–VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating (CdTe:Cl and Cd0.8Zn0.2Te) and semiconducting samples (undoped CdTe). The techniques utilized were deep level transient spectroscopy (DLTS) on semiconducting samples and photoinduced current transient spectroscopy and photo-DLTS on high resistivity materials. These last two techniques are complementary and allow the determination of the trap character (donor/acceptor). Three acceptor levels are seen in the electrical transient data at Ev+0.12, 0.14, and 0.16 eV with hole capture cross sections of 2×10−16, 1×10−16, and 4×10−17 cm2, respectively. The lowest level is seen only in Cl doped material corroborating the literature optical and electron spin resonance identification of a level at Ev+0.12 eV as being a VCd+ClTe donor–acceptor pair center. All three levels may be present in the 1.4 eV luminescence band. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117228
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  • 9
    Electronic Resource
    Electronic Resource
    Deep levels in Er-doped liquid phase epitaxy grown silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 468-470 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical activity of Er-doped silicon is related to the presence of defects which enhance the typical radiative transition at 0.8 eV but whose nature and properties are still largely unknown. We have investigated the deep levels present in Er-doped liquid phase epitaxy silicon to identify the traps possibly related to the luminescence. Among the observed levels, two minority carrier traps labeled E2 (EC−0.20 eV) and E3 (EC−0.39 eV), and one majority carrier trap labeled H1 (Ev+0.32 eV) are good candidates for the material optical activity. The onset of luminescence occurs after a thermal treatment and is accompanied by a high space charge density localization at the epilayer-substrate interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120788
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  • 10
    Electronic Resource
    Electronic Resource
    Charge collection mapping of the back-transfer process in Er-doped silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3585-3587 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge collection analyses have been carried out on Er-doped silicon to investigate the excitation and de-excitation mechanisms of the Er3+ ion related to the λ=1.54 μm luminescence. Carrier recombination and trapping at the defective states induced in the material by the presence of Er play a significant role in the excitation of the Er3+ ion and in its nonradiative decay by the energy back-transfer process. We have obtained a two-dimensional map of the lattice sites where the back-transfer process occurs, and provided experimental proof of the cooperation of two different defects in the excitation and de-excitation processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126714
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