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  • 1
    Electronic Resource
    Electronic Resource
    Carrier dynamics and photodetection in charge injection transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3312-3317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study picosecond carrier transport dynamics induced by 200 fs 1.55 μm optical pulses in charge injection transistor structures. We propose and demonstrate a new optoelectronic method for exploring the interactions of hot majority carriers and cold minority carriers, as well as the optical control of real space transfer in these devices. The minority holes photogenerated in the channel produce substantial cooling of the hot-electron majority carriers and lead to the reduction of the real space transfer. The new method also provides a direct measure of the minority carrier lifetime in the transistor channel. These effects are demonstrated in InGaAs-channel devices with both InAlAs and InP barriers. The similarities in the device characteristics are explained in terms of the interaction of photogenerated minority holes with majority electrons in the channel leading to a photoconductor-like drain current and to a reduction in the real space transfer collector current. The differences are attributed to the different conduction and valence band energy offsets between the wide band gap barrier and the low band gap collector and channel layers. Furthermore, the InAlAs-barrier device shows a capability of serving as a practical photodetector with the measured, system-limited recovery speed of ∼5 ps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361231
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    InGaAsP grown by He-plasma-assisted molecular beam epitaxy for 1.55 μm high speed photodetectors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1278-1280 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple photoconductive optical detectors for 1.55 μm wavelength have been fabricated on InGaAsP grown by He-plasma assisted molecular beam epitaxy. Characterization of the photodetectors shows that their speed is determined by the free carrier trapping time, with a full width at half-maximum impulse response of approximately 6 ps. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121046
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of carrier lifetime and resistivity on annealing in InP grown by He-plasma-assisted molecular beam epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3423-3425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have experimentally investigated the carrier lifetime and resistivity versus anneal temperature in InP films grown by He-plasma-assisted molecular beam epitaxy. This material is shown to exhibit picosecond carrier lifetime with high resistivity even after anneal at temperatures up to 700 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367110
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  • 4
    Electronic Resource
    Electronic Resource
    Integration of low-temperature GaAs on Si substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 255-257 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs was grown on Si substrates by molecular-beam epitaxy at low substrate temperatures. Femtosecond time-resolved reflectivity investigations revealed a significant reduction of carrier lifetime in GaAs epilayers from 14 ps to 〈0.5 ps as the growth temperature was reduced from 400 to 150 °C. Photoconductors were fabricated on the epilayers, and electro-optic sampling was used to confirm the electrical response times of 〈1 ps. The responsivity is comparable to that for low-substrate-temperature GaAs grown on GaAs substrates, with a photogenerated carrier mobility of ∼100–300 cm2/V s. The low growth temperatures allow ultrafast GaAs-based photodetector incorporation into Si-based integrated circuits for novel optoelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109620
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  • 5
    Electronic Resource
    Electronic Resource
    Ultrafast photodetector materials based on oxygen-doped metalorganic vapor phase epitaxy GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Controlled incorporation of deep level states into III/V materials tailor their electrical and optical characteristics for ultrafast optoelectronics. We investigate the photoinjected carrier dynamics in GaAs grown by metalorganic vapor phase epitaxy (MOVPE) with (C2H5)2AlOC2H5 as an oxygen precursor providing the deep level state control. Photoconductor switching was used to determine the free-carrier trapping times, and femtosecond photoreflectance at 2 eV was used to measure the trapped charge recombination time as a function of oxygen concentration. We also use electro-optic sampling to demonstrate a photodetector with 650-fs measured response time and to show the material applicability to ultrafast optoelectronics. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114143
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  • 6
    Electronic Resource
    Electronic Resource
    Transient ellipsometric surface photoreflectance applied to GaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1950-1952 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We apply a time-resolved reflection ellipsometric technique to study the dynamic properties of the surface dielectric index of GaAs after optical excitation. The technique allows the separation of the refractive and absorptive components of the dielectric index change and accounts for possible anisotropic effects. The carriers optically injected at the surface create electric field perturbations of ∼7 kV/cm for an average carrier density of ∼1018 cm−3 over a depth of ∼0.25 μm. The measured absorptive component change is shown to be qualitatively different from that typically measured via thin-film transmission and can be attributed to the Franz–Keldysh effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111752
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    Paper (German National Licenses)
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