ISSN:
1432-0630
Keywords:
PACS: 61.72.Tt; 61.72.Ss; 61.72.Yx
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
x Si1-x/Si heterostructures have been obtained. Here the chemical effects seem to be of less importance. The Fermi-level effect determines the ionized boron solubilities in GexSi1-x and in Si, as well as the thermal equilibrium concentration of the singly-positively-charged crystal self-interstitials I+ which governs the boron diffusion process. The junction carrier concentration affects the concentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050848
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