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  • 1
    Electronic Resource
    Electronic Resource
    Asymmetric synthesis of both enantiomers of tomoxetine and fluoxetine. Selective reduction of 2,3-epoxycinnamyl alcohol with Red-Al (1988)
    s.l. : American Chemical Society
    The @journal of organic chemistry 53 (1988), S. 4081-4084 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00252a036
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  • 2
    Electronic Resource
    Electronic Resource
    Interface formation of Ca with poly(p-phenylene vinylene) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7894-7899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the interface formation of Ca with poly(p-phenylene vinylene) (PPV) using x-ray photoemission spectroscopy. The most significant part of our findings was the very late occurrence of band bending at the Ca/PPV interface and the lack of strong reaction between the Ca overlayer with the PPV substrate, indicating that the Schottky barrier formation in Ca/PPV was a slow process. The late barrier formation at the Ca/PPV interface may be due to the shielding by surface oxygen impurities, part of which underwent calcium oxide formation at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353941
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  • 3
    Electronic Resource
    Electronic Resource
    Interactions between implanted Mg and base p-type dopant (Be,Zn,C) in heterojunction bipolar transistor devices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5694-5698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interactions, in GaAlAs/GaAs heterojunction bipolar transistor structures, between implanted Mg atoms and different p-type base dopants (Be in layers grown by molecular beam epitaxy, Zn or C in layers grown by organometallic chemical vapor deposition) have been investigated. Different diffusion behaviors have been observed, according to the base dopant, either for the implanted Mg or for the base dopant itself. The resultant hole concentration profile obtained with a C–V electrochemical profiler has also been studied as a function of the base p-type dopant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351355
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  • 4
    Electronic Resource
    Electronic Resource
    Mixing of GaAs/(Ga,Al)As interfaces by Ga+ implantation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1433-1443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intermixing of GaAs/(Ga,Al)As heterointerfaces by Ga+ implantation and annealing has been investigated. The damage accumulation in a GaAs/AlAs superlattice turned out to be less rapid than in a GaAs/GaAlAs quantum-well structure. Low-temperature photoluminescence (PL) spectroscopy of a GaAs/AlAs superlattice could be performed for doses as high as 1 × 1016 ions/cm2. The photoluminescence spectra exhibited several emission bands on the high energy side. The number and energy of these blue shifted peaks were found to depend on the implanted dose and as confirmed by secondary ion mass spectrometry, they could be interpreted as the emission of several quantum wells of the superlattice, disordered with different mixing rates. Two regimes were evidenced; while the depth extension of the disordering has been directly related to the post-implantation defects distribution in the high dose regime, some diffusion of these defects during annealing has been pointed out in the low dose regime. Cross-sectional transmission electron microscopy observations have confirmed the influence of the structure of the implanted sample on damage accumulation. Moreover, the decrease of the PL intensity after annealing could be related to the presence of extended residual defects in the implanted layers. The study of the influence of annealing time at 760 °C, has shown that the photoluminescence intensity can be progressively recovered, while the intermixing saturates rapidly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349554
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  • 5
    Electronic Resource
    Electronic Resource
    U(Sn,Pb)3: A specific heat study of the magnetic-nonmagnetic transition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4827-4829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: USn3 is a highly enhanced paramagnet and close to a magnetic instability. Whereas UPb3 has an antiferromagnetic transition at 31 K and the 5f electrons appear to be more localized. Both USn3 and UPb3 crystallize in the Cu3Au structure and complete pseudobinary alloys can be prepared. The temperature dependence of the specific heat C(T) for 1.5≤T≤50 K and magnetic susceptibility χ(T) for 1.8≤T≤ 400 K has been measured on U(Sn1−xPbx)3 for 0≤x≤1.0. Both χ(T) and C(T) data indicate that the substitution of Sn for Pb in UPb3 (i.e., decreasing x) causes the Neel temperature TN to increase initially to 38 K for x≈0.7 then decrease with TN→0 for x=0.07. The electronlike contribution to C(T) as T→0 remains high in the magnetically ordered state with the electronic specific heat coefficient γ for UPb3 ≈173 mJ/mol K2. The magnetic entropy removal below TN for UPb3 is ∼2−3 J/mol K, i.e., is smaller than expected for a U3+ or U4+ free ions and even for U3+ with a doublet ground state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344750
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of a Cr oxide layer on GaAs(100) by oxidation with condensed water (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1781-1787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Cr oxide layer produced by the deposition of Cr onto a condensed H2O overlayer on a GaAs(100) wafer at T=90 K was studied using synchrotron radiation photoemission. Cr reacted with H2O immediately upon deposition at low temperature resulting in the synthesis of hydrated Cr oxide compounds, and then formed a stable dry oxide as the temperature of the substrate was raised toward room temperature and eventually 400 °C. The oxide was stable up to a temperature of at least 400 °C, although the substrate did show changes indicative of reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353214
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of Al nitride layers on GaAs(100) by reaction with condensed ammonia (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2623-2627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An Al nitride-GaAs(100) bilayer formed by deposition of Al into a solid ammonia overlayer on GaAs(100) at T=100 K is studied using synchrotron radiation photoemission. Al does not react with NH3 to an appreciable amount at 100 K, but stable AlN layers are formed as the temperature of the substrate is raised to room temperature. The Al1−xNx layer formed is stable upon annealing up to 600 K, and detectable amounts of AlAs are not observed during deposition of 20 A(ring) of Al into NH3 or after heating the sample to 300 K and higher.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349374
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray photoemission investigations of the interface formation of Ca and poly(p-phenylene vinylene) (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 6991-6993 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have investigated the interface formation of Ca with poly(p-phenylene vinylene) (PPV) using x-ray photoemission spectroscopy (XPS). The most astonishing result of the investigations is that the Schottky barrier formation in Ca/PPV is a slow process possibly caused by the oxygen and sulfur impurities segregated on the PPV surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463214
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  • 9
    Electronic Resource
    Electronic Resource
    Selective doping of 4H–SiC by codiffusion of aluminum and boron (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5647-5651 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A graphite mask was used to realize selective doping of aluminum/boron in 4H–SiC by thermal diffusion at a temperature range of 1800–2100 °C. The doping profiles investigated by secondary ion mass spectrometry show that a high aluminum concentration of 5×1019 cm−3 near the surface and linearly graded boron profile up to several micrometers in depth can be obtained. Hall effect measurement was also employed to obtain the electrical characteristics of the diffused region, from which the carrier concentration (1×1019 cm−3) and hole mobility (7 cm2/V s) at room temperature were extracted. Room temperature photoluminescence indicates that the dominant luminescence is attributed to the donor acceptor pair recombination, in which boron D complex is the prevailing center rather than Al and boron shallow acceptors. Cathodoluminescence micrographs clearly illustrate a pattern with the locally diffused regions. To confirm the viability of the diffusion process, planar p-n diodes with a fairly low forward voltage drop (3.3 V at 100 A/cm2) and high reverse blocking capability (more than 1100 V) were fabricated. Built-in voltage of 2.9 V, which is typical for 4H–SiC p-n diodes, was obtained by capacitance–voltage measurement. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415541
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of precursors and substrate materials on microstructure, dielectric properties, and step coverage of (Ba, Sr)TiO3 films grown by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 124-132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (Ba, Sr)TiO3 (BST) thin films have been grown on planar Ir/Si and Pt/Si substrates and on three-dimensional (3D) Ir electrodes by metalorganic chemical vapor deposition using two kinds of β-diketonate-based BST precursors. Film growth was studied as a function of film thickness, composition, and substrate temperature. Growth rate was monitored by in situ spectroscopic ellipsometry. The BST films were characterized ex situ by a variety of techniques including x-ray photoelectron spectroscopy, Auger electron microscopy, atomic force microscopy, transmission and scanning electron microscopy, x-ray diffraction, and impedance analyzer. The results reveal that the two sets of BST precursors, albeit slightly different, show quite different reactivities that strongly affect the step coverage on the 3D structure. However, different reactivities have no apparent effect on the microstructure, surface morphology, and dielectric properties of the stoichiometric BST films. These properties strongly depend on the film composition, substrate material, and growth temperature. In general, the BST films grown on Pt exhibit better crystalline quality, surface smoothness, and dielectric properties compared to those grown on Ir under the optimal growth conditions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371833
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