ISSN:
1600-5767
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Geosciences
,
Physics
Notes:
Thin films of β-FeSi2, grown on Si(111) by the technique of solid-phase epitaxy (SPE) in ultra-high vacuum (UHV) conditions, were analysed by transmission electron microscopy (TEM). The expected epitaxies, β-FeSi2(101)/Si(111) and β-FeSi2(110)/ Si(111), were detected for film thicknesses smaller than 2̃50 Å. The present analysis reveals an unusual microstructure: the films are composed of very thin lamellae (5–30 Å) of both orientations induced by planar defects. Such lamellar films are strained, with a parameter shift estimated to be about 0.4%. For these films, grain sizes in the μm range were obtained and the interface roughness increased with increasing film thickness. An unexpected film orientation, β-FeSi2(100)/Si(111), was also found.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0021889892012408
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