Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1406-1408
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The lattice location of Si in GaN has been investigated by ion channeling in combination with Rutherford backscattering spectrometry, particle induced x-ray emission, and nuclear reaction analysis. Metalorganic chemical vapor deposition grown GaN on c-plane sapphire substrates and implanted with 28Si at a dose of 7×1014 cm−2 with postimplant annealing were investigated. It was found that almost 100% of Si goes into the Ga site at 1100 °C. Our results directly indicate that the electrical activation of Si implanted GaN with postimplant annealing is due to the formation of substitutional Si at this temperature. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121958
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