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  • 1
    Electronic Resource
    Electronic Resource
    Optical and mechanical properties of plasma-beam-deposited amorphous hydrogenated carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5986-5995 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous hydrogenated carbon films have been deposited on crystalline silicon and on glass from an expanding thermal plasma. Two deposition parameters have been varied: the electric current through the plasma source and the admixed acetylene flow. No energetic ion bombardment has been applied during deposition. Ex situ analysis of the films yields the infrared refractive index, hardness, Young's modulus, optical band gap, bonded hydrogen content, and the total hydrogen and mass density. The infrared refractive index describes the film properties independent of which plasma deposition parameter (arc current or acetylene flow) has been varied. The hardness, Young's modulus, sp2/sp3 ratio, and mass density increase with increasing refractive index. The optical band gap and hydrogen content of the films decrease with increasing refractive index. It is demonstrated that plasma-beam-deposited diamondlike a-C:H has similar properties as material deposited with conventional plasma-enhanced chemical-vapor-depositions techniques under energetic ion bombardment. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363567
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of substrate conditions on the plasma beam deposition of amorphous hydrogenated carbon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2643-2654 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study on the effect of substrate conditions was performed for the plasma beam deposition of amorphous hydrogenated carbon ( a-C:H) from an expanding thermal argon/acetylene plasma on glass and crystalline silicon. A new substrate holder was designed, which allows the control of the substrate temperature independent of the plasma settings with an accuracy of 2 K. This is obtained via a combination of a good control of the holder's yoke temperature and the injection of helium gas between thermally ill connected parts of the substrate holder system. It is demonstrated that the substrate temperature influences both the a-C:H material quality and the deposition rate. The deposition rate and substrate temperature are presented as the two parameters which determine the material quality. In situ studies prove that the deposition process is constant in time and that thermally activated etching processes are unlikely to contribute significantly during deposition. Preliminary experiments with an additional substrate bias reveal that an energetic ion bombardment of the growing film surface does not influence the deposition process. A tentative deposition model is proposed based on the creation and destruction of active sites, which depend on the particle fluxes towards the substrate and the substrate temperature. This model allows the qualitative explanation of the observed deposition results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366080
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma beam deposited amorphous hydrogenated carbon: Improved film quality at higher growth rate (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 152-154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality diamondlike a-C:H has been deposited, at low ion bombardment energies, from an expanding thermal argon/acetylene plasma at high growth rate. It is observed that quality improvement, in terms of hardness, is equivalent to maximization of the refractive index. The highest refractive indices are obtained when the admixed acetylene flow and the argon ion flux emanating from the plasma source are comparable in magnitude, which suggests critical loading. This also indicates that the acetylene has to be dissociated only once. Combination with the observed quality behavior at higher deposition rates suggests that there is one preferred hydrocarbon radical for deposition, probably C2H. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116904
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    Paper (German National Licenses)
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