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  • 1
    Electronic Resource
    Electronic Resource
    In situ study of void growth kinetics in electroplated Cu lines (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1803-1810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ electromigration apparatus was used to study the kinetics of void growth in unpassivated, electropolated copper damascene lines. Voids were observed to grow by consuming grains in a stepwise fashion, either by grain thinning or by an edge displacement mechanism. Surface diffusion was found to be the primary diffusion path for void growth. In addition, grain boundaries provided a secondary path for copper diffusion in polycrystalline structures and nucleation sites for void growth in bamboo structures. Void growth rate was measured as a function of sample temperature and linewidth using a scanning electron microscope. An electromigration activation energy of 0.9±0.1 eV was determined for the copper voiding process. The effect of linewidth on void growth rate was also investigated and found to be negligible, consistent with a surface-diffusion dominated model for void growth. The in situ apparatus also made it possible to directly correlate changes in electrical resistance with physical changes taking place in the test structures. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492871
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  • 2
    Electronic Resource
    Electronic Resource
    High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 512-514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the potential for ultrathin aluminum-oxide films as alternate gate dielectrics for Si complementary metal–oxide–semiconductor technology. Films are deposited in ultrahigh vacuum utilizing atomic beams of aluminum and oxygen on Si(100) surfaces. We show device-quality Si(100)/Al2O3 interfaces with interfacial trap densities in the 1010 cm−2 eV−1 range, and with leakage current densities five orders of magnitude lower than what is observed in SiO2 insulators at the same equivalent electrical thickness. As-grown films possess an amorphous-to-microcrystalline structure, depending upon the deposition temperature, and any interfacial layers between the Si(100) and Al2O3 layer are 〈∼0.5 nm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1373695
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  • 3
    Electronic Resource
    Electronic Resource
    The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5093-5099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure was measured for AlCu lines, formed using either a traditional planar metal subtractive etch process or a newly developed hot AlCu-trench-damascene process. It was found that 0.35 μm wide damascene AlCu lines formed a large grained bamboo microstructure with little or no Al (111) texture. The local crystallographic texture was measured in a scanning electron microscope using electron backscatter pattern analysis often referred to as backscatter Kikuchi diffraction. Damascene structures consisted of AlCu films deposited at greater than 400 °C onto Ti or Ti/TiN into preformed amorphous SiO2 trenches, 0.3–5.0 μm wide by 0.4 μm deep, followed by aluminum chemical mechanical polishing to remove the metal overburden. Standard planar metal control samples consisted of blanket Al or AlCu films deposited onto either an amorphous SiO2 substrate or onto SiO2/Ti/TiN substrates, followed by subtractive etching to define 0.45–10 μm wide lines as well as large (e.g., 10×10 μm2) pads. The planar metal samples exhibited either little change or a slight strengthening of their (111) fiber texture with decreasing line width; this was in sharp contrast to the damascene films in which a marked weakening in the (111) fiber texture with decreasing line width was found. In addition a trimodal (111) texture distribution developed in trenches where TiAl3 intermetallic formed. The role of intermetallic formation (TiAl3), elevated (〉400 °C) AlCu deposition temperature, large bamboo grain size, local AlCu crystallographic texture and differences in sidewall coverage between subtractive etched and trench-damascene processed AlCu on film microstructure are examined. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314612
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  • 4
    Electronic Resource
    Electronic Resource
    Mechanisms for microstructure evolution in electroplated copper thin films near room temperature (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2516-2525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model which accounts for the dramatic evolution in the microstructure of electroplated copper thin films near room temperature. Microstructure evolution occurs during a transient period of hours following deposition, and includes an increase in grain size, changes in preferred crystallographic texture, and decreases in resistivity, hardness, and compressive stress. The model is based on grain boundary energy in the fine-grained as-deposited films providing the underlying energy density which drives abnormal grain growth. As the grain size increases from the as-deposited value of 0.05–0.1 μm up to several microns, the model predicts a decreasing grain boundary contribution to electron scattering which allows the resistivity to decrease by tens of a percent to near-bulk values, as is observed. Concurrently, as the volume of the dilute grain boundary regions decreases, the stress is shown to change in the tensile direction by tens of a mega pascal, consistent with the measured values. The small as-deposited grain size is shown to be consistent with grain boundary pinning by a fine dispersion of particles or other pinning sites. In addition, room temperature diffusion of the pinning species along copper grain boundaries is shown to be adequate to allow the onset of abnormal grain growth after an initial incubation time, with a transient time inversely proportional to film thickness. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371086
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  • 5
    Electronic Resource
    Electronic Resource
    Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 904-906 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration in 0.27 μm wide Cu damascene interconnections has been investigated. The results show that the electromigration time to failure of Cu interconnections is greatly influenced by the thickness of the metal liner at the contact between the via and underlying line. A remarkably long lifetime was achieved when a 3 nm thick liner (at the via/metal line interface) was used, since the abrupt mass flux divergence at this interface normally seen is greatly diminished. Voids were found in the regions where there was no electric field and on the bamboo Cu grain structure. Void formation is explained by the effect of a vacancy wind. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347400
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  • 6
    Electronic Resource
    Electronic Resource
    Stable ultrahigh-density magneto-optical recordings using introduced linear defects (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 410 (2001), S. 444-446 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The stability of data bits in magnetic recording media at ultra-high densities is compromised by the thermal ‘flips’—magnetic spin reversals—of nano-sized spin domains, which erase the stored information. Media that are magnetized perpendicular to the plane of the film, ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35068515
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  • 7
    Electronic Resource
    Electronic Resource
    Microanalyses of chemically etched thin film alumina-ferrite interfaces (1989)
    Springer
    Journal of materials science 24 (1989), S. 1169-1176 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Thin films of aluminium oxide were deposited on ferrite (Ni x Zn1−x Fe2O4) substrates by r.f. sputtering. The sputtered alumina films were not easily etched by hot phosphoric acid unlike readily etchable films prepared by physical deposition techniques. Microanalytical characterization of unetched films, partially etched films and interfacial regions was conducted to identify the microscopic features responsible for reluctant film etchability. The post-etched films were categorized as easily, partially and un-etchable (EE, PE and U respectively) and were examined using optical microscopy, SEM, XRD, EDS, XPS, AES, and TEM/STEM. TEM examination of cross-sections of partially etchable films revealed a non-uniform crystalline phase at the film-substrate interface. Electron diffraction data identified the phase asη-alumina although AES and EDS results suggest that the interfacial phase also contained some iron. The occurrence and orientation of theη-alumina phase was shown to depend on the orientation of the grains of the ferrite substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02397044
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  • 8
    Electronic Resource
    Electronic Resource
    Microanalyses of chemically etched thin film alumina-ferrite interfaces (1989)
    Springer
    Journal of materials science 24 (1989), S. 1169-1176 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Thin films of aluminium oxide were deposited on ferrite (Ni x Zn1−x Fe2O4) substrates by r.f. sputtering. The sputtered alumina films were not easily etched by hot phosphoric acid unlike readily etchable films prepared by physical deposition techniques. Microanalytical characterization of unetched films, partially etched films and interfacial regions was conducted to identify the microscopic features responsible for reluctant film etchability. The post-etched films were categorized as easily, partially and un-etchable (EE, PE and U respectively) and were examined using optical microscopy, SEM, XRD, EDS, XPS, AES, and TEM/STEM. TEM examination of cross-sections of partially etchable films revealed a non-uniform crystalline phase at the film-substrate interface. Electron diffraction data identified the phase asη-alumina although AES and EDS results suggest that the interfacial phase also contained some iron. The occurrence and orientation of theη-alumina phase was shown to depend on the orientation of the grains of the ferrite substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00553139
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Peatland distibution along a north-south transect in the Mackenzie River Basin in relation to climatic and environmental gradients (1996)
    Springer
    Plant ecology 126 (1996), S. 119-133 
    Details
    ISSN: 1573-5052
    Keywords: Bryophytes ; Climatic and environmental gradients ; DCCA ; Peatlands
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Climate is a major factor affecting the development and form of peatlands, as well as the distribution of individual bryophyte species. This paper examines the climatic and ecological gradients affecting the distribution of peatland types along a north-south gradient in the Mackenzie River Basin. Based on a TWINSPAN analysis of bryophyte abundance from 82 peatlands in the Mackenzie River Basin, seven peatland types, two with southerly geographical distributions are recognized. In the Mackenzie River Basin, such local factors as surface water chemistry, pH, and solute concentration as well as height above the water table play a significant role in determinining bryophyte species distributions. Climate is secondary. Amongst the climatic variables, precipitation, length of the growing season, and annual temperature are the most signifcant. The seven peatland groups are: widespread poor fens; peat plateaus with thermokarst pools, low-Boreal bogs; bogs and peat plateus without thermokarst pools; low-Boreal dry poor fens; wet moderate-rich fens; and wet extreme-rich fens.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00045599
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  • 10
    Electronic Resource
    Electronic Resource
    Bryophyte response surfaces along ecological and climatic gradients (1991)
    Springer
    Plant ecology 93 (1991), S. 29-45 
    Details
    ISSN: 1573-5052
    Keywords: Bryophyte ; Response surfaces ; Peatlands ; Western Canada ; Sphagnum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Bivariate response surfaces were fitted to abundance data for 6 mire bryophyte species in ecological and climatic space in western Canada. Response surfaces were derived by gridding data, eliminating outliers, and reducing effects of overly influential abundance values. Predicted values at each grid node were calculated as distance-weighted means of all observed values within a predetermined radius of each node. Response surfaces accurately delimited species ecological and climatic ranges. The gridding process consistently underestimated observed abundance values, and paired t-tests indicated significant differences between predicted and observed values for Sphagnum fuscum and Tomenthypnum nitens in ecological space, and for Sphagnum fuscum, Tomenthypnum nitens, and Scorpidium scorpioides in climatic space. Predicted values were significantly different only for those species that had large data sets, and for species that had clusters of points with an inordinately large number of data points within them. However, with the exception of Sphagnum tenellum, predicted and observed values were significantly correlated for all species in both ecological and climatic space. R 2 analyses for the linear relationship between predicted and observed values can be used as a diagnostic tool to determine the effectiveness of the gridding process to accurately predict observed abundance values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00044922
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