Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Texture inheritance in Al(Cu) interconnect materials (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2337-2342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition surface morphology plays a major role in governing the texture within sputter deposited Al (0.5% wt., Cu) films. The presence of a thin Ti barrier layer provides an epitaxial template for Al(Cu) atoms to grow. However, the topography of the surface on which the Ti is deposited also influences Al(Cu) film texture. Through a combination of x-ray pole figure analysis and scanning electron microscopy, we observed that the behavior of (111) texture of Al(Cu) films deposited on Ti is dictated by the underlying surface roughness. A quantitative link between the offset in maximum Al (111) texture from the substrate normal and the average surface orientation of the deposition surface has been established. Information from atomic force microscope scans of the underlying surface has been used to construct a surface offset distribution (SOD), which contains the distribution of local orientations within a surface. Above a threshold roughness of the deposition surface, the SOD maxima correspond to the observed offset Al (111) texture in Al(Cu)/Ti films deposited on a variety of interlevel dielectric layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337938
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    COPPER METALLIZATION FOR HIGH PERFORMANCE SILICON TECHNOLOGY (2000)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 30 (2000), S. 229-262 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The increasingly rapid transition of the electronics industry to high-density, high-performance multifunctional microprocessor Si technology has precipitated migration to new materials alternatives that can satisfy stringent requirements. One of the recent innovations has been the substitution of copper for the standard aluminum-copper metal wiring in order to decrease resistance and tailor RC delay losses in the various hierarchies of the wiring network. This has been accomplished and the product shipped only since the fall of 1998, after more than a decade of intensive development. Critical fabrication innovations include the development of an electroplating process for the copper network, dual-damascence chem-mech polishing (CMP), and effective liner material for copper diffusion barrier and adhesion promotion. The present copper technology provides improved current-carrying capability by higher resistance to electromigration, no device contamination by copper migration, and the performance enhancement analytically predicted. This success of the shift to copper will accelerate the industry movement to finer features and more complex interconnect structures with sufficient device density and connectivity to integrate full systems on chips. The next innovation will be the introduction of low-dielectric constant material that, in combination with copper, will create added excitement as the industry learns how to utilize this new capability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.matsci.30.1.229
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Early stages of void formation in Al-Cu lines studied using positron annihilation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 52-54 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have applied positron annihilation spectroscopy to examine the formation of voids in SiO2-passivated 1 μm×1 μm Al-0.5 wt. % Cu lines. Samples were heat-treated both ex situ and in the positron beam to monitor void formation as a function of time and temperature. By measuring the fraction of 3-γ annihilations (a sensitive indicator of large open volume defects) we have established that voids are present at the interface between the Al alloy lines and the SiO2 passivation before heat treatment. The 3-γ fraction then grows to a maximum in less than 1 h at a temperature of 300 °C. Changes in the Doppler-broadening S parameter are also observed. Studies are underway to apply the same methodology to investigate electromigration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113071
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The role of texture in the electromigration behavior of pure aluminum lines (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2409-2417 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of microstructure on electromigration behavior were evaluated in three nominally 1 μm thick pure aluminum films, which were tested at temperatures from 423 to 523 K. The three Al films had essentially the same grain structure but different variants of an 〈111〉 texture. Texture had a very strong effect on the electromigration behavior in ∼2 μm wide polycrystalline lines, where both a reduced fraction of randomly oriented grains and a tighter 〈111〉 distribution increased the electromigration lifetime. The apparent activation energy for electromigration decreased as the texture strengthened. The near bamboo microstructure of 0.5 μm narrow lines showed extensive orientation clustering with an unusually high proportion of low angle boundaries in the most strongly 〈111〉 textured film. The electromigration damage in both 2 and 0.5 μm wide lines was correlated with the types of flux divergence sites in each film. The texture impacts the character of the grain boundaries and interfaces which control the mass transport during electromigration. A weaker texture has more juxtaposed "fast'' and "slow'' diffusivity grain boundaries and interfaces, which results in faster mass transport, more flux divergence sites, and a more rapid accumulation of damage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361168
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Texture in multilayer metallization structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2671-2680 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of thin Ti, TiN, or Ti/TiN underlayers on the development of the crystallographic texture and the grain structure are explored. Metal layers ∼0.5 μm in thickness of Al-0.5Cu or of Cu are deposited on these underlayers and on amorphous SiO2 as a reference. A strongly textured underlayer such as Ti〈0002〉 or Ti〈0002〉/TiN〈111〉 induces a similarly strong 〈111〉 texture in the AlCu. In copper with 〈111〉, 〈200〉, and random texture components, an underlayer induces a stronger 〈111〉 component compared to an analogous film deposited on SiO2. A nearly random texture in TiN significantly weakens the texture in subsequent metal films. Grain size distributions in all AlCu films are monomodal reflecting a process of normal grain growth. The grain size distribution for Cu sometimes deviates from lognormal. The bimodal distribution implies that grain growth is abnormal even though the median grain size does not exceed a low multiple of the film thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357564
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    The role of Cu distribution and Al2Cu precipitation on the electromigration reliability of submicrometer Al(Cu) lines (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3423-3434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and Cu distribution were determined for blanket and patterned Al(≤4 wt % Cu) thin films as a function of annealing. The growth of aitch-theta-phase (Al2Cu) precipitates in blanket and patterned submicrometer-wide lines was quantified along with the Cu concentrations within the Al grains. The reliability of 0.5-μm-wide lines was found to be strongly influenced by the details of the annealing sequence; however, 1-μm-wide lines were less affected. The difference in the electromigration behavior of 0.5-μm-wide lines is shown to be due to the different film microstructures formed in the patterned lines as a function of annealing history. Specifically, the amount of Cu in the grains and the size and distribution of the aitch-theta-phase precipitates were found to be a strong function of both the annealing conditions and the linewidth in 0.5–1-μm-thick Al(Cu) films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356102
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Control of in-plane texture of body centered cubic metal thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4319-4326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that dramatically different in-plane textures can be produced in body centered cubic (bcc) metal thin films deposited on amorphous substrates under different deposition conditions. The crystallographic orientation distribution of polycrystalline bcc metal thin films on amorphous substrates often has a strong 〈110〉 fiber texture, indicating that {110} planes are parallel to the substrate plane. When deposition takes place under bombardment by energetic ions or atoms at an off-normal angle of incidence, the 〈110〉 fiber texture develops an in-plane texture, indicating nonrandom azimuthal orientations of the crystallites. Three orientations in Nb films have been observed under different deposition geometries, in which the energetic particle flux coincides with channeling directions in the bcc crystal structure. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems with various configurations. These are described, and an example is given in which the in-plane orientation of Mo films deposited in two different in-line magnetron sputtering systems differs by a 90° rotation. In these two cases, there is a strong 〈110〉 fiber texture, but the in-plane 〈100〉 direction is oriented parallel to the scan direction in one system, and perpendicular to the scan direction in the other system. The conditions which produce such different in-plane textures in two apparently similar sputtering systems are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366239
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Kinetics of Al grain growth, Al2Cu precipitation, and dissolution in blanket thin films and fine lines (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2781-2790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The apparent activation energy Ea for Al grain growth, Al2Cu (aitch-theta-phase) precipitation, and Al2Cu dissolution were determined by ramped resistance measurements for both Al(Cu) blanket films and patterned lines. The Ea's measured for the initial stages of grain growth in 0.5-, 1-, and 2-μm-thick Al(4 wt % Cu), Al(2 wt % Cu), and Al films ranged from 1.19 to 1.46 eV. The Ea's for grain growth were higher for 0.6–0.9-μm-wide Al(Cu) lines than for blanket Al(Cu) films 1.89–3.1 eV, and the temperature of the peak transformation rate occurred at a much higher temperature, 310–400 vs 90–155 °C. This is due to the geometric constraints in patterned lines. The Ea's for Al2Cu precipitation in Al(4 wt % Cu) and Al(2 wt % Cu) films varied from 0.86 to 1.25 eV. For 0.6-μm-wide Al(4 wt % Cu) lines, the Ea for Al2Cu precipitation was 1.7 eV. The Ea's for Al2Cu dissolution increased with decreasing Cu content from 1.62–1.74 eV to 2.23–2.30 eV with Al(4 wt % Cu) and Al(2 wt % Cu) films, respectively. The temperature of the peak reaction rate Tp for Al2Cu dissolution increased markedly with increasing film thickness at constant ramp rates. These results demonstrate that the microstructure and Cu distribution in Al(Cu) interconnections on microelectronic chips vary as a function of feature size. This implies that blanket film data is not necessarily applicable to patterned features.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357543
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2945-2947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanical stresses of a pure Al film and a low-thermal-expansion Al-3 at. % Ge thin film on (100) Si wafers are measured and compared in the temperature range of room temperature to 400 °C by the vibrating membrane method. The results are discussed including the comparison with those obtained by the popular wafer bending method. It was found that the chemical reaction between the Al and the Si substrate affects the mechanical stress. The relatively low stress in the Al(Ge) film is due to the interference of Ge precipitation. The relatively slow relaxation in the Al film during annealing may be caused by the dissolution of Si into Al.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354623
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen redistribution and gettering in AlCu/Ti thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7921-7923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Redistribution and uptake of hydrogen was found to occur during anneals in forming gas (90% N2+10% H2) of thin-film AlCu/Ti/AlCu sandwich layers deposited on a thin layer of SiO2. Annealing at 350 or 400 °C for 30 min caused the Ti-containing layer to getter hydrogen, which came from both the upper and lower interfaces of the SiO2 and from the gas. The uptake kinetics from the gas were surface limited. The hydrogen distribution was influenced by the formation of TiAl3, in which the solubility of hydrogen was found to be negligible. Hydrogen in partly reacted layers was found to be associated with unreacted titanium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347483
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...