Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2210-2212 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preferred crystallographic orientation, or texture, of aluminum films deposited on oxidized silicon by evaporation and by partially ionized beam (PIB) deposition is studied. Texture is quantified by the x-ray diffraction pole figure technique. The pole figures reveal important details of the crystallite distribution not quantifiable by simply taking the 2θ scan. It is found that the films deposited by the PIB technique possess a very strong {111} fiber texture whose strength can be controlled by deposition conditions. Correlation between the strength of the texture and the electromigration lifetime is discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported from an investigation of the effects of selected processing parameters on the morphology and properties of YBa2Cu3O7−δ (YBCO) superconducting thin films grown directly on polycrystalline silver substrates by chemical-vapor deposition (CVD). These results were achieved through a set of experimental studies which examined: (i) recrystallization mechanisms of polycrystalline silver and their effect on the deposition of YBCO thin films; and (ii) CVD processing conditions leading to the growth of high-quality YBCO films. The samples were analyzed using dynamic impedance, four-point resistivity probe, x-ray diffraction, Rutherford backscattering, and scanning electron microscopy. These studies showed that substrate temperature played a critical role not only in the formation of YBCO films, but also in the recrystallization of silver substrates, which in turn greatly influenced film growth. The studies also led to the identification of a two-stage processing scheme for the growth of YBCO films on silver. The first processing stage consisted of a substrate conditioning cycle which involved a 10 min ramping from room temperature to deposition temperature where the substrates were held for an additional 10 min in a flow of 70 sccm O2 at a reactor working pressure of 2 Torr. The second processing stage involved actual film deposition at 760–800 °C for 3–10 min (depending on desired film thickness) in a mixed flow of 70 sccm O2 and 210 sccm N2O at a reactor working pressure of 4 Torr. Samples thus produced were highly oriented along the c axis perpendicular to the substrate with a zero resistance transition temperature of 87 K and a critical current density of 2×104 A/cm2 (77 K, B=0). The films had a thickness of 200–700 nm depending on the length of the growth cycle, which corresponded to the growth rates in the range 65–130 nm/min. A growth mechanism for YBCO on polycrystalline silver, which emphasized the role of silver recrystallization, was consequently proposed and discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2409-2417 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of microstructure on electromigration behavior were evaluated in three nominally 1 μm thick pure aluminum films, which were tested at temperatures from 423 to 523 K. The three Al films had essentially the same grain structure but different variants of an 〈111〉 texture. Texture had a very strong effect on the electromigration behavior in ∼2 μm wide polycrystalline lines, where both a reduced fraction of randomly oriented grains and a tighter 〈111〉 distribution increased the electromigration lifetime. The apparent activation energy for electromigration decreased as the texture strengthened. The near bamboo microstructure of 0.5 μm narrow lines showed extensive orientation clustering with an unusually high proportion of low angle boundaries in the most strongly 〈111〉 textured film. The electromigration damage in both 2 and 0.5 μm wide lines was correlated with the types of flux divergence sites in each film. The texture impacts the character of the grain boundaries and interfaces which control the mass transport during electromigration. A weaker texture has more juxtaposed "fast'' and "slow'' diffusivity grain boundaries and interfaces, which results in faster mass transport, more flux divergence sites, and a more rapid accumulation of damage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2671-2680 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of thin Ti, TiN, or Ti/TiN underlayers on the development of the crystallographic texture and the grain structure are explored. Metal layers ∼0.5 μm in thickness of Al-0.5Cu or of Cu are deposited on these underlayers and on amorphous SiO2 as a reference. A strongly textured underlayer such as Ti〈0002〉 or Ti〈0002〉/TiN〈111〉 induces a similarly strong 〈111〉 texture in the AlCu. In copper with 〈111〉, 〈200〉, and random texture components, an underlayer induces a stronger 〈111〉 component compared to an analogous film deposited on SiO2. A nearly random texture in TiN significantly weakens the texture in subsequent metal films. Grain size distributions in all AlCu films are monomodal reflecting a process of normal grain growth. The grain size distribution for Cu sometimes deviates from lognormal. The bimodal distribution implies that grain growth is abnormal even though the median grain size does not exceed a low multiple of the film thickness.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3241-3243 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum films deposited at three different conditions, such that texture is the only microstructural variable, were tested for electromigration behavior. Texture analysis shows that random and (111) fiber texture components are present in the films deposited by both partially ionized beam (PIB), physical vapor deposition and sputtering. Two parameters are required to properly quantify the texture: (111) volume fraction and the distribution (half-width) of the (111) fiber component. As the (111) texture becomes stronger, the median time to failure increases, while the failure standard deviation decreases. Previous texture correlations are based on incomplete information, so they cannot predict electromigration behavior in all cases.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1859-1861 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture of a copper film deposited on bare Si(111) is studied. Deposition is done using the partially ionized beam technique where no potential is applied to the substrate. Pole figure analysis shows a very sharp texture where Cu{531} is parallel to Si(111). In the plane of the film, two variants of copper orientation are present with orientation relationships Si〈112¯〉//Cu〈13¯4〉and Si〈112¯〉//2.5° from Cu〈35¯0〉. The rotation between variants of 56.5° is less than the Cu(111) twin orientation. Possible reasons for the mismatch are discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 177-179 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of 0.4–8.6 at. % Co to Cu thin films strongly influences the temperature evolution of microstructure, stress, and resistivity. For concentrations near 1 at. % Co in coevaporated Cu-Co on oxidized Si, normal grain growth begins at about 75 °C, about 50 °C lower than in pure Cu. There is an abrupt decrease in resistivity and stress at a temperature which increases with Co content from 120 °C (0% Co) to 250 °C (8.6 at. % Co), and coincides with precipitation of Co within Cu grains. A dramatic change in texture is observed in both coevaporated and electroplated Cu-Co films upon annealing above 250 °C. As-deposited films have a three-component texture of (111) fiber, (200) fiber, and random but annealed films have a dominant (200) fiber texture. This "cube'' texture differs from the dominant (111) texture of annealed pure Cu, and appears to be coupled to an abnormal grain growth process since many grains are observed to be larger than ten times the film thickness. It is proposed that segregation of Co to external surfaces or to Cu grain boundaries may favor this (200) texture by selectively affecting grain-boundary mobility or the surface energy driven grain growth.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 809-811 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactive partially ionized beam deposition technique was used to deposit amorphous BaxTi2−xOy thin films with the Ba/Ti ratios from 1 for a stoichiometric BaTiO3 film to 0.2 for a Ti enriched film. A postdeposition annealing between 500 and 600 °C converted stoichiometric amorphous BaTiO3 into polycrystalline structure. This crystallization resulted in densification with a 9% decrease in film thickness. Off-stoichiometric thin films remained amorphous up to 700 °C. Annealed off-stoichiometric BaxTi2−xOy films, however, had lower leakage current and loss tangent than polycrystalline films due to their amorphous nature making them more suitable for electronic applications. At temperatures of 800 °C or higher, significant reaction occurred between the films and Si substrate as detected by Rutherford backscattered spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3683-3685 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fine grain BaTiO3 thin films with a grain size ranging between 100 and 1000 A(ring) were deposited using the reactive partially ionized beam deposition technique at 550–600 °C. A metal/insulator/metal structure of these materials was fabricated and the dielectric response was measured up to 40 GHz using a network analyzer. It is shown that these films are not ferroelectric. However, these films show a dielectric relaxation in the frequency interval between several MHz and 1 GHz. We propose that this indicates a relaxation mechanism not related to the ferroelectric domain walls. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2812-2814 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The texture of vapor deposited parylene (poly-p-xylylene) thin films on Si is measured using the x-ray pole figure technique to quantify the crystalline portion. The as-deposited sample is the monoclinic α phase where the (020) fiber texture component comprises 48% and the remaining 52% are randomly oriented crystallites. The sample annealed for 350 °C 12 h is hexagonal β phase with an (040) fiber texture component of 68%. The half-width (ω) of the (040) fiber component of the β crystallites is within 25° of the substrate normal (fiber axis). In a β(040) oriented crystallite, the polymer chain is parallel to the Si substrate. This β fiber texture develops by polymer chain movement and rearrangement of the as-deposited α fiber texture.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...