Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electrical characteristics of thin Ta2O5 films deposited by reactive pulsed direct-current magnetron sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1448-1452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature deposition of tantalum oxide films on metallized silicon substrates was investigated by reactive pulsed magnetron sputtering of Ta in an Ar/O2 ambient. The dielectric constant of the tantalum oxide ranged from 19 to 31 depending on the oxygen percentage [P(%)=PO2/(PO2+PAr)] used during sputtering. The leakage current density was less than 10 nA/cm2 at 0.5 MV/cm electric field and the dielectric breakdown field was greater than 3.8 MV/cm for P=60%. A charge storage as high as 3.3 μF/cm2 was achieved for 70-Å-thick film. Pulse frequency variation (from 20 to 200 kHz) did not give a significant effect in the electrical properties (dielectric constant or leakage current density) of the Ta2O5 films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372033
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Reactive sputtering deposition of low temperature tantalum suboxide thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3264-3266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A relatively simple direct current sputtering deposition scheme has been employed to deposit 1000 A(ring) tantalum oxide thin films at low temperature. At (approximately-equal-to)190 °C substrate temperature, without further annealing, tantalum oxide films with a dielectric constant of 21–22 and a leakage current density as low as 10 nA/cm2 at 0.5 MV/cm electrical field strength (∼5 V of applied voltage) are obtained. These properties are achieved over a wide range of O2/Ar ratios when the total flow rate is kept constant. XPS measurements reveal that these films are nonstoichiometric with a composition of TaOx where x(approximately-equal-to)1.5. These low temperature, high dielectric constant thin films have potential applications as decoupling capacitors in very high speed electronic circuits and packaging.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109094
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Thermally stable amorphous BaxTi2−xOy thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 809-811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactive partially ionized beam deposition technique was used to deposit amorphous BaxTi2−xOy thin films with the Ba/Ti ratios from 1 for a stoichiometric BaTiO3 film to 0.2 for a Ti enriched film. A postdeposition annealing between 500 and 600 °C converted stoichiometric amorphous BaTiO3 into polycrystalline structure. This crystallization resulted in densification with a 9% decrease in film thickness. Off-stoichiometric thin films remained amorphous up to 700 °C. Annealed off-stoichiometric BaxTi2−xOy films, however, had lower leakage current and loss tangent than polycrystalline films due to their amorphous nature making them more suitable for electronic applications. At temperatures of 800 °C or higher, significant reaction occurred between the films and Si substrate as detected by Rutherford backscattered spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113428
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    High-frequency response of capacitors fabricated from fine grain BaTiO3 thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3683-3685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fine grain BaTiO3 thin films with a grain size ranging between 100 and 1000 A(ring) were deposited using the reactive partially ionized beam deposition technique at 550–600 °C. A metal/insulator/metal structure of these materials was fabricated and the dielectric response was measured up to 40 GHz using a network analyzer. It is shown that these films are not ferroelectric. However, these films show a dielectric relaxation in the frequency interval between several MHz and 1 GHz. We propose that this indicates a relaxation mechanism not related to the ferroelectric domain walls. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114140
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Discrete β-Ta2O5 crystallite formation in reactively sputtered amorphous thin films (1998)
    Springer
    Journal of materials science 33 (1998), S. 4375-4379 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The crystallization of thin amorphous TaOx films formed by d.c. reactive sputtering was investigated at temperatures from 500–700 °C. The films remained amorphous for times up to 100 h at 500 °C. The formation of discrete, single crystallites of the orthorhombic β-Ta2O5 phase was observed after annealing at 600 °C for times from 8–108 h. The crystallites were 0.35 μm×0.35 μm after 8 h and grew to approximately 2.5 μm×2.0 μm after 108 h. A (2 0 0) fibre texture with a 6° spread was observed. More rapid in-plane growth in the [0 1 0] direction resulted in a near-rectangular shape and is attributed to a ledge growth mechanism. Higher temperature anneals at 650 and 700 °C produced less-textured polycrystalline films with remnant amorphous regions. © 1998 Kluwer Academic Publishers
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004484915386
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...