Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 3264-3266
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A relatively simple direct current sputtering deposition scheme has been employed to deposit 1000 A(ring) tantalum oxide thin films at low temperature. At (approximately-equal-to)190 °C substrate temperature, without further annealing, tantalum oxide films with a dielectric constant of 21–22 and a leakage current density as low as 10 nA/cm2 at 0.5 MV/cm electrical field strength (∼5 V of applied voltage) are obtained. These properties are achieved over a wide range of O2/Ar ratios when the total flow rate is kept constant. XPS measurements reveal that these films are nonstoichiometric with a composition of TaOx where x(approximately-equal-to)1.5. These low temperature, high dielectric constant thin films have potential applications as decoupling capacitors in very high speed electronic circuits and packaging.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109094
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