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  • 1
    Electronic Resource
    Electronic Resource
    Germanium-doped gallium phosphide obtained by neutron irradiation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2287-2293 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of electrical, optical, electron spin resonance and optically detected magnetic resonance studies of thermal neutron irradiated and annealed at 800 °C n-type GaP are presented. Evidence is found to support the view that the main dopant introduced via transmutation of GaP, germanium, occupies cation sites and forms neutral donors. This confirms the possibility of neutron transmutation doping of GaP. Simultaneously, it is shown that germanium is absent at cation sites. Presence of other forms of Ge-related defects is deduced from luminescence and absorption data. Some of them are tentatively identified as VGa-GeGa acceptors leading to the self-compensation process. This observation means that the neutron transmutation as a doping method in application to GaP is not as efficient as for Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354712
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Optically detected magnetic resonance studies of neutron-transmutation-doped GaP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 689-694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A direct proof of neutron transmutation doping (NTD) of GaP is presented on the basis of optically detected magnetic resonance (ODMR). GaP:S samples grown by the liquid- encapsulated Czochralski method were irradiated with thermal neutrons and subsequently annealed at 800 °C. In the ODMR experiments the transmuted Ge substitutional on Ga sites was detected. The NTD process was also found to create deep acceptors; these are tentatively identified as associates of gallium vacancies (VGa) and germanium donors on gallium sites (GeGa). Such identification requires that some of the structural defects (vacancies) created by β and γ recoil during transmutation are stabilized by forming VGa- GeGa complexes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347350
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  • 3
    Electronic Resource
    Electronic Resource
    Role of electron traps in the excitation and de-excitation mechanism of Yb3+ in InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1523-1530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study concerning the excitation mechanism of the Yb impurity in n- and p-type InP crystals was performed by the method of optically detected microwave-induced impact ionization. Based on the results it is argued that the Yb3+ core excitation is intermediated by a nonradiative recombination of a bound exciton. A fingerprint of the existence of such an excitonic state is given. Also, the nonradiative decay channel is discussed and shown to involve an Auger process with the energy transfer to a locally bound electron. Experimental evidence is presented that by the impact ionization of the bound electron the nonradiative recombination channel may be removed, leading to an increase of the characteristic Yb3+ luminescence. An unprecedented microwave-induced 5% increase of the Yb3+ intrashell emission has been recorded. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358903
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  • 4
    Electronic Resource
    Electronic Resource
    Optically detected microwave-induced impact ionization of ytterbium bound excitons in InP (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2237-2239 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically detected microwave-induced impact ionization of excitons and shallow donors is studied in Yb-doped InP grown by metalorganic chemical vapor deposition. The experimental results directly confirm that Yb3+ intrashell emission is induced by nonradiative recombination of Yb bound excitons due to an impurity Auger effect. Yb3+ ions in InP are found to bind excitons with the electron being localized first, followed by subsequent hole capture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104937
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  • 5
    Electronic Resource
    Electronic Resource
    Deactivation of the photoionization excitation mechanism of rare-earth intraion emission in ZnS (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2192-2194 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new, very efficient excitation mechanism of the rare-earth (RE) intraion emission was observed recently. This is a process in which the RE ion undergoes ionization and the RE intraion emission is induced when the ionized carrier is recaptured by the RE. The capture process proceeds via an intermediate state due to RE bound exciton (BE), from which the energy is transferred to the RE excited state. In this letter we discuss mechanisms which limit the efficiency of this excitation channel. The first is the thermal dissociation of the RE BE, which reduces the efficiency of the energy transfer thus quenches the RE intraion emission. It is also indicated that an efficient energy transfer from RE Be to iron Fe2+ centers competes with the transfer of the BE energy to RE core states. Our results mean that the practical utilization of the above excitation mechanism of emission in the RE-activated ZnS devices may be hampered by the common contamination of this material with iron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102964
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  • 6
    Electronic Resource
    Electronic Resource
    Impact ionization mechanism in rare earth activated sulfides (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 195-197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we present the theoretical estimation of the 3+(large-closed-square)2+ ionization energies of rare earth (RE) ions in sulfides. It is shown that for Yb, Eu, Sm, Tm, and Pr the RE2+ energy level is located in the forbidden gap of wide-gap sulfides [ZnS (except Pr), CaS, SrS, BaS, MgS]. For these RE ions the possibility of a new efficient excitation mechanism (impact ionization) of electroluminescence is indicated. Highly efficient electroluminescence can be obtained if the ionized RE center rapidly recaptures a free carrier either directly or indirectly via the RE3+ excited state. This prediction is confirmed by the recent experimental results for Pr-doped SrS. Further experimental results supporting the presented calculations are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103023
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  • 7
    Electronic Resource
    Electronic Resource
    Three-center Auger excitation mechanism of ytterbium intrashell emission in ZnS (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 40-42 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new, very efficient excitation mechanism of Yb intrashell 4f-4f emission in ZnS is reported. We show that the energy transfer from donor-acceptor pairs to Yb sites leads to Yb ionization (Yb3+⇒Yb2+), followed by capture of ionized carriers via the Yb3+ external excited state (bound exciton state), an energy transfer to the Yb3+ 4f shell, and Yb3+ 4f-4f radiative recombination. Since three centers (donor, acceptor, and Yb) participate in the energy transfer process in which Yb is first ionized, the above excitation mechanism is of three-center Auger transition nature. A similar excitation mechanism is expected for Eu, Sm, and Tm in ZnS, i.e., for these rare earth (RE) ions which can change their charge state from 3+ to 2+ in this lattice. For wider band-gap sulfides, such as CaS or SrS, this mechanism can be of importance also for other REs, such as, for example, Pr, Dy, and Er.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103572
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  • 8
    Electronic Resource
    Electronic Resource
    Deep acceptorlike recombination centers in bulk liquid encapsulated Czochralski GaP, studied with optically detected magnetic resonance (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 200-206 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optically detected magnetic resonance technique is applied to determine the nature of broad, featureless emission bands observed in the near-infrared region in bulk GaP crystals grown by the liquid encapsulated Czochralski method. A broad emission band with maximum at ≈8000 A(ring) (≈1.55 eV) was consistently observed in undoped and donor-doped (S, Te, Se, Ge) crystals, and is shown to be due to donor-acceptor pair (DAP) recombination. The analysis of the optically detected magnetic resonance experiments indicates that shallow donors and deep acceptors are active in the 8000-A(ring) recombination. The identity of the ≈0.7-eV deep acceptor center active in this DAP transition could not be determined from the experimental results, but a single acceptor complex consisting of a Ga vacancy and two adjacent donors is proposed as a tentative model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342490
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  • 9
    Electronic Resource
    Electronic Resource
    Electron spin resonance studies of the temperature dependence of the ZnS visible photoluminescence (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4259-4261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new time-resolved electron spin resonance experiment is presented. This experiment allows us to evaluate an efficiency of different nonradiative recombination mechanisms responsible for the strong temperature dependence of the ZnS:Al visible photoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337465
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  • 10
    Electronic Resource
    Electronic Resource
    Electron capture processes in ZnS: The role of Al related and other donors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3923-3925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transient electron spin resonance experiment shows that the Al-related donor in ZnS plays an insignificant role in electron-capture processes, which are dominated by a 35-meV native donor of unknown nature. The methods of determining effective capture cross sections of these donors are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337795
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