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  • 1
    Electronic Resource
    Electronic Resource
    Phase transformation of sputter deposited tungsten thin films with A-15 structure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9134-9141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transformation of sputter deposited A-15 crystal structure tungsten thin films by rapid thermal annealing and in situ heat treatments in a transmission electron microscope was investigated. Phase transformation of A-15 W into body-centered-cubic (bcc) W did not occur at a specific annealing condition but over a range of annealing times and temperatures. However, complete A-15 to bcc W transformation occurred in all samples rapid thermal annealed at 650 °C for 1 min. Variations in the transformation time and temperature for each sample were attributed to differences in the oxygen concentration in the films. The higher the oxygen concentration in the film, the higher the temperature or longer the time required to transform A-15 W into bcc W. No measurable difference in the oxygen concentration before and after transformation was found and the O and W atom's binding energies were the same in both the A-15 and bcc crystal structure. The resistivity of A-15 crystal structure films decreased significantly after transformation into the body-centered-cubic phase, on the order of 80%. The decrease in resistivity as a result of the transformation was attributed to the elimination of the A-15 defect structure and an increase in particle size by coalescence during transformation, from ∼5 nm in diameter in the as-deposited A-15 crystal structure to ∼25–40 nm in diameter after transformation into bcc W. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362584
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  • 2
    Electronic Resource
    Electronic Resource
    Real-time imaging of analyzed areas in surface analysis (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 2326-2331 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A system for real-time imaging of the analyzed area of specimens used in surface analysis is described. Images can be displayed on either an inexpensive TV or video monitor. Circuits are provided for the construction of such an imaging system. Its application to correct an improperly calibrated slit arrangement on a hemispherical analyzer used for x-ray photoelectron spectroscopy is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138706
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  • 3
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of silicon carbide at room temperature (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3413-3415 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The objective of this letter is to report on the successful deposition of SiC by pulsed laser deposition at room temperature. Deposition of SiC films is accomplished by ablating a 6H-SiC target, using the 248 nm radiation from a KrF* excimer laser. X-ray photoelectron spectroscopy data conclusively show that the films are silicon carbide. The Si 2p peaks are observed from a film at 100.3 eV, from a 6H-SiC standard at 100.3 eV, and from a Si standard at 99.7 eV. Similar scans of the C 1s peak reveal a shift in binding energy from 284.7 eV for a graphite standard, to 283.3 eV for a deposited film, and 283.4 eV for the SiC standard. Further, the integrated areas and shapes of the peaks from the film and the SiC standard are equivalent. Transmission electron microscopy reveals a film microstructure which is largely amorphous, but which contains a significant volume fraction of SiC crystallites. Analysis of the electron diffraction patterns indicates that the crystallites are β-SiC. The relationship between the film microstructure and the energy contained within the laser-generated plume is also considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111257
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  • 4
    Electronic Resource
    Electronic Resource
    Shifted x-ray photoelectron peak in molecular beam epitaxial GaAs grown at 200 °C (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1329-1331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopic results show that molecular beam epitaxial GaAs grown at 200 °C has a reduced effective surface potential energy, about 0.5 eV, compared with the usual 0.7 eV. A Poisson analysis of the data, using parameters from Hall effect and absorption measurements, requires that the Fermi-level-controlling defect in this material must have a significantly lower activation energy than that of EL2, an unexpected result.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107582
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  • 5
    Electronic Resource
    Electronic Resource
    Applications of a system for real-time imaging of analyzed areas in surface analysis (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 11 (1988), S. 243-250 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A real-time imaging system has been used to determine the analyzer acceptance area in electron spectrometers used for surface analysis. This inexpensive system uses an electron beam that is rastered across the specimen to create both specimen images and images of analyzed areas. These two images can then be superimposed on a video monitor or black and white television set for real-time display at TV rates. The imaging system has been used to examine the properties of a double-pass cylindrical mirror analyzer (Perkin-Elmer Model PHI-550) and a hemispherical analyzer (KRATOS ES300). For the double-pass CMA, the analyzed area was star-shaped rather than the expected circular shape and in the retarding mode the analyzer pass energy had only a small effect on the size of the analyzed area; also, the minimum analyzed area did not coincide with the focal point of the analyzer as determined by an elastically back-scattered 2 keV electron beam. For the hemispherical analyzer, the analyzed area was found to depend almost entirely on the size of the entrance slit, was slightly affected by the initial kinetic energy of the imaged electrons and the mode of operation, but was not affected by the analyzer pass energy or the size of the exit slit.
    Additional Material: 14 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740110505
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  • 6
    Electronic Resource
    Electronic Resource
    Instrumental effects in the analysis of non-homogeneous specimens in XPS (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 11 (1988), S. 383-388 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The effects of specimen non-homogeneity on XPS spectra have been studied for a Kratos ES300 x-ray photoelectron spectrometer. This instrument was equipped with a real-time imaging system to permit accurate specimen positioning. It was found that, for a correctly positioned specimen, both the measured kinetic energy and intensity of a photoelectron peak depended on the position on the specimen from which the signal arose. The variation in measured kinetic energy across the width of the entrance slit was found to be ∼1.7 eV for the widest entrance slit and highest pass energy of our spectrometer (FAT mode, 130 eV pass energy, 5 mm wide slit). The intensity of the photoelectron peaks was found to vary by a factor of ∼2 across the analyzer acceptance area for the widest (5 mm) slit, which corresponds to the inverse square of the distance from the X-ray source. These studies show that significant shifts in kinetic energy are possible due solely to specimen non-homogeneity (as opposed to chemical shifts) as well as misleading intensity variations. Therfore, data obtained from non-homogeneous specimens should be carefully examined for these artifacts when using large- area XPS analysis.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740110619
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  • 7
    Electronic Resource
    Electronic Resource
    Signal-to-noise measurement in X-ray photoelectron spectroscopyThis work was sponsored by the Air Force Wright Aeronautical Laboratories, Materials Laboratory, Air Force Systems Command, United States Air Force, Wright-Patterson Air Force Base, Ohio 45433, USA. (1985)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 7 (1985), S. 217-222 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A study of signal-to-noise (S/N) was made in a Kratos ES300 XPS system on a variety of materials using both monochromatic and conventional X-ray sources covering a wide range of count rates. Equations relating S/N to total counts (S + B), background (B), and the signal-to-background (S/B) ratio were derived and tested for data obtained in a system limited by noise from counting statistics.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740070504
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  • 8
    Electronic Resource
    Electronic Resource
    Methods for quantitative analysis in XPS and AESInvited paper presented at the Quantitative Surface Analysis (QSA-5) Conference, London, 15-18 November 1988. (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 271-283 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: One of the biggest problems in quantitative surface analysis with x-ray photoelectron spectroscopy (XPS) or Auger electron spectroscopy (AES) is in obtaining an accurate measure for the number of photoelectrons or Auger electrons contributing to peaks in spectra. The approach taken for quantitative analysis often depends on the data acquisition method, although there are several subsequent data processing methods that can also be applied. In XPS, spectra are usually acquired by pulse counting, whereas in AES, spectra can be acquired by a variety of methods, e.g. pulse counting, voltage-to-frequency conversion and the use of a variety of modulation techniques. Processing methods involve peak or peak-to-peak height measurement, peak area measurement, background subtraction, deconvolution, differentiation, integration, spectrum addition and subtraction, curve fitting and factor analysis. The application of these techniques to quantitative analysis in XPS and AES will be reviewed.
    Additional Material: 17 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740140602
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  • 9
    Electronic Resource
    Electronic Resource
    Monochromator versus deconvolution in xps: signal-to-noise considerationsThis work was sponsored by the Air Force Wright Aeronautical Laboratories, Materials Laboratory, Air Force Systems Command, United States Air Force, Wright-Patterson Air Force Base, Ohio 45433, USA. (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 9 (1986), S. 132-132 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740090212
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  • 10
    Electronic Resource
    Electronic Resource
    A high-performance low-cost computer interface for AES/XPSThis work was sponsored by the Air Force Wright Aeronautical Laboratories, Materials Laboratory, Air Force Systems Command, United States Air Force, Wright-Patterson AFB, OH 45433, USA. (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 87-91 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: An Auger/XPS system has been automated using a mircocomputer. Some considerations in the design of the interface which could be used for a variety of spectroscopies will be presented and should be of general interest. The spectrometer used in this work was a Perkin-Elmer Physical Electronics Model 550 SAM/XPS. The computer used was a Zenith Z-100 but the interface was designed for use with any microcomputer having two parallel I/O ports. Hardware details will be discussed with emphasis on the versatility, efficiency, and cost. The sweep control for the electron energy analyzer utilizes two 12 bit DAC's, one for the starting energy and another for the energy sweep range, thereby allowing 12 bits of resolution in both the sweep and offset. The software has been written in Microsoft FORTRAN, a subset of FORTRAN 77. The versatility of this system is illustrated with XPS data from Ag and a high kinetic energy backscattered primary.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100205
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