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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3761-3764 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transverse thermal conductivities of SiO2 thin films are determined as a function of film thickness. The results indicate that the apparent thermal conductivities of SiO2 thin films are much lower than the thermal conductivity of bulk SiO2. In addition, a slight decrease in the thermal conductivity is observed as the average temperature within the dielectric film increases. The average transverse thermal conductivity decreases drastically as the film thickness is reduced. This strong thickness dependence is explained in terms of an interfacial thermal resistance that develops at the SiO2/Si interface. The experimentally determined value for the interfacial thermal resistance, Rint, is 2.05 mm2 °C W−1.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4007-4011 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effective transverse thermal conductivity of Si3N4 thin films is determined as a function of film thickness. Results indicate that the effective thermal conductivity behavior of Si3N4 thin films is similar to that exhibited by amorphous SiO2 films; that is, there is no significant difference between the thermal conductivity of amorphous Si3N4 and amorphous SiO2 thin films as a function of thickness or temperature. The average effective transverse thermal conductivity decreases drastically as the film thickness is reduced. This strong thickness dependence is ascribed to a thermal resistance that is localized at the amorphous film/Si-substrate interface. Within the narrow temperature range studied, the interfacial thermal resistance and the intrinsic conductivity of amorphous films increase with temperature; however, the interfacial resistance dominates as the film thickness is reduced. In light of the observed similarities between the Si3N4 results and those previously obtained on SiO2, the reduction in the effective thermal conductivity of amorphous thin films with decreasing thickness is discussed in terms of both interfacial thermal resistance and scattering mechanisms in amorphous solids.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2103-2105 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of thin alternating layers of Cu and Nb on Si(100) substrates has been studied by transmission electron microscopy as a function of layer thickness. For layer thickness above 25 Å, there is a strong texture orientation relationship with the close packed planes of fcc Cu parallel to close packed planes of bcc Nb, forming the so-called "Kurdjumov-Sachs" orientation relationship. However, at thicknesses of under 12 Å, the Cu is constrained to grow as a slightly distorted bcc structure. It is thought that, when it reaches a critical thickness between 12 and 20 Å, the bcc Cu loses coherency and transforms martensitically to the fcc phase, resulting in the observed Kurdjumov–Sachs orientation relationship. Electron energy loss spectroscopy observations indicate a difference of 2 eV in the L3 edge suggesting that the Fermi energy is lower in the constrained bcc form of Cu than in the equilibrium fcc structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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