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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1813-1815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≈7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Nanometric solid inclusions in diamond incorporated in garnet and zircon from felsic gneiss of the Kokchetav massif, Kazakhstan, have been examined utilizing electron microscopy and focused ion beam techniques. Host garnet and zircon contain numerous pockets of multiple inclusions, which consist of 1–3 diamond crystals intergrown with quartz, phengite, phlogopite, albite, K-feldspar, rutile, apatite, titanite, biotite, chlorite and graphite in various combinations. Recalculation of the average chemical composition of the entrapped fluid represented by multiple inclusion pockets indicates that such fluid contained a low wt% of SiO2, suggesting a relatively low-temperature fluid rather than a melt. Transmission electron microscopy revealed that the diamond contains abundant nanocrystalline inclusions of oxides, rare carbonates and silicates. Within the 15 diamond crystals studied, abundant inclusions were found of SiO2, TiO2, FexOy, Cr2O3, ZrSiO4, and single grains of ThxOy, BaSO4, MgCO3, FeCr2O4 and a stoichiometric Fe-rich pyroxene. The diversity of trace elements within inclusions of essentially the same stoichiometry suggests that the Kokchetav diamond crystallized from a fluid containing variable amounts of Si, Fe, Ti, Cr, Zr, Ba, Mg and Th and other minor components such as K, Na, P, S, Pb, Zn, Nb, Al, Ca, Cl. Most of the components in crystals included in diamond appear to have their origin in the subducted metasediments, but some of them probably originate from the mantle. It is concluded that Kokchetav diamond most likely crystallized from a COH-rich multicomponent supercritical fluid at a relatively low temperature (hence the apparently low content of rock-forming elements), and that the diversity of major and minor components suggests interactions between subducted metasediments and mantle components.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3167-3171 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Irradiation effects on thin foils of bulk YBa2Cu3O7−x have been studied in a transmission electron microscope using 100-, 150-, 200-, 250-, and 300-keV electrons at 83 and 300 K. The disordering of the oxygen atoms and vacancies in the O(4) and O(5) sites in the Cu-O planes during irradiation was monitored by measuring the splitting of the (11¯0) diffraction spots in the [001] diffraction pattern. The results show that YBa2Cu3O7−x is insensitive to 100-keV electron irradiation. Irradiation by higher-energy electrons leads to irradiation-induced oxygen disordering of the oxygen atoms and vacancies, mainly by single displacement events. The excellent fit of the data to a disordering model suggests that the displacement threshold energy for oxygen in YBa2Cu3O7−x is around 18 eV and that irradiation-assisted oxygen reordering occurs in YBa2Cu3O7−x at 300 K, but not at 83 K.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 302-309 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Parallel (in-plane) electrical resistivities of single-layered Cu and Cr films, and Cu/Cr multilayered thin films sputter deposited on Si substrates were evaluated as a function of layer thicknesses ranging from 2.5 to 150 nm in the temperature range of 4–325 K. The resistivity of the multilayers at a given temperature increased and residual resistivity ratio decreased with decreasing layer thicknesses. At 300 K, the resistivity of a 1 μm thick Cu film was approximately equal to the bulk value, but the resistivity of the Cr film was an order of magnitude higher than that of bulk Cr. The microstructures of the multilayers and the single-layered Cu and Cr thin films were characterized by transmission electron microscopy. For layer thicknesses ranging from 2.5 to 150 nm, the multilayers exhibited sharp, planar interfaces between the two phases. The individual Cu and Cr layers were nanocrystalline with near-equiaxed grains in Cu and columnar grains in Cr. The dependence of electrical resistivity on the layer thickness of multilayers is explained using a model that accounts for interface scattering and thin-film resistivities of polycrystalline Cu and Cr. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 891-893 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cr films sputtered onto {100} Si substrates at room temperature were found to be under residual tension, as revealed by wafer curvature measurements. A 150 nm thick Cr film was bombarded with 300 keV Ar ions after deposition. The intrinsic residual tensile stress increased slightly and then decreased with further increase in the ion dose. For ion doses 〉1×1015 ions/cm2, the stress in the film became compressive and increased with increasing dose. Transmission electron microscopy revealed that the grain boundaries in as-deposited Cr have columnar porosity. A Cr film, ion irradiated to a dose of 5×1015 ions/cm2, showed no grain boundary porosity. The changes in the residual stress during ion irradiation are explained by considering Ar incorporation in the film and the manner in which irradiation may change the interatomic distances and forces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1450-1452 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A type IIa natural diamond was irradiated at room temperature with energetic electrons. The threshold energy for displacement of atoms from their lattice sites was determined for three principal crystallographic directions by observing the formation of defect clusters during irradiation in a transmission electron microscope. The displacement-threshold energies were found to be 37.5±1.2 eV for the electron incident in the [100] direction, 45.0±1.3 eV in the [111] direction, and 47.6±1.3 eV in the [110] direction.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2103-2105 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of thin alternating layers of Cu and Nb on Si(100) substrates has been studied by transmission electron microscopy as a function of layer thickness. For layer thickness above 25 Å, there is a strong texture orientation relationship with the close packed planes of fcc Cu parallel to close packed planes of bcc Nb, forming the so-called "Kurdjumov-Sachs" orientation relationship. However, at thicknesses of under 12 Å, the Cu is constrained to grow as a slightly distorted bcc structure. It is thought that, when it reaches a critical thickness between 12 and 20 Å, the bcc Cu loses coherency and transforms martensitically to the fcc phase, resulting in the observed Kurdjumov–Sachs orientation relationship. Electron energy loss spectroscopy observations indicate a difference of 2 eV in the L3 edge suggesting that the Fermi energy is lower in the constrained bcc form of Cu than in the equilibrium fcc structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2515-2517 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A type IIa natural diamond was irradiated with 300 kV electrons at 16 and 87 K. Transmission electron microscopy and electron energy-loss spectroscopy were employed to investigate the phase stability of diamond under electron irradiation. At both temperatures, the diamond structure was found to be stable, and the formation of defect clusters was observed. The present results in comparison to previous work on ion implantation indicate that displacement cascade damage is a prerequisite for irradiation-induced phase transformation from diamond to amorphous carbon or graphite. The temperature dependence of the cluster size suggests that interstitials are thermally mobile above 50 K.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Oxidation of metals 19 (1983), S. 117-127 
    ISSN: 1573-4889
    Keywords: Oxidation ; nucleation ; orientation ; electron microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Electron microscopy investigations have been conducted on the oxides formed on Fe and Fe-Cr alloys at elevated temperatures (700–800
    Type of Medium: Electronic Resource
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