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  • 1
    Electronic Resource
    Electronic Resource
    Large magnetoresistance in La0.7Sr0.3MnO3/SrTiO3/La0.7Sr0.3MnO3 ramp-edge junctions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 486-488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication of ferromagnet–insulator–ferromagnet junction devices using a ramp-edge geometry based on (La0.7Sr0.3)MnO3 ferromagnetic electrodes and a SrTiO3 insulator. The maximum junction magnetoresistance (JMR) as large as 23% is observed below 300 Oe at low temperatures (T〈100 K). Our ramp-edge junctions exhibit JMR of 6% at 200 K with a field less than 100 Oe. The device performance at room temperature is believed to be limited by both the nearly equivalent coercive fields in the electrodes and the magnetization process, rather than by the insulating barrier. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120794
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  • 2
    Electronic Resource
    Electronic Resource
    Transport and magnetism correlations in thin-film ferromagnetic oxides : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4535-4537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To determine the Tc dependence of the colossal magnetoresistance (CMR) exhibited by the ferromagnetic La0.7A0.3MnO3+δ (A=Ba, Ca, Sr) system, we examine the magnetic-field and temperature-dependent resistivity and magnetization of a series of thin films that were grown via pulsed-laser deposition. The films had magnetic ordering temperatures (Tc) ranging from 150 to 350 K. All samples display a large negative MR that is largest near Tc, and samples with a low Tc display significantly larger MR values than do samples with large Tc's. The quantity ρ(Tc)/ρ(4 K), the amount by which the resistivity is reduced by full ferromagnetic order, varies as exp(Ea/Tc) with an activation energy Ea=0.1 eV. These results indicate that the magnitude of the CMR effect in a given specimen is controlled not by ρ(Tc), but by Tc via the ratio ρ(Tc)/ρ(4 K). Phenomenological scaling relationships are also reported that link ρ(H,T) to both H and M(H,T). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361715
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  • 3
    Electronic Resource
    Electronic Resource
    Superconductor GdBa2Cu3O7−δ edge junctions with lattice-matched Y0.6Pr0.4Ba2Cu3O7−δ barriers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2871-2873 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature-superconductor Josephson junctions with an edge geometry of superconductor/normal-metal/superconductor have been fabricated on yttria-stabilized zirconia substrates by engineering the electrode and N-layer material to reduce the lattice mismatches (a, b, and c). With GdBa2Cu3O7−δ as electrodes and Pr-doped Y0.6Pr0.4Ba2Cu3O7−δ as a barrier, the lattice mismatches from electrode and barrier layer are reduced to a very low level. The junctions fabricated with such a design demonstrate resistively shunted junction current-voltage characteristics under dc bias at temperatures in the range of 77–88 K. The quite low specific interface resistivity on the order of 10−10 Ω cm2 indicates that the junction performance is controlled by the normal-metal (N) layer material instead of the interfaces. The use of lattice-matched electrode and N-layer material is one of the key design rules to obtain controllable high-temperature superconductor Josephson junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360094
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of the Ag/YBa2Cu3O7−x contact in thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6336-6340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver (Ag) contacts to very thin superconducting YBa2Cu3O7−x films were prepared by thermal evaporation. The nature of the Ag/YBa2Cu3O7−x contact during thermal treatment was in situ investigated by a combination of three- and four-terminal resistance measurements. The experimental results suggested that the interaction between Ag and the YBa2Cu3O7−x film began at a temperature of around 370 °C. The contact resistance measurement for different films also demonstrated that the contact property was a strong function of the film quality and surface conditions. The lack of reproducibility in forming a low-resistance contact to very thin YBa2Cu3O7−x films and the high probability of degrading the film quality after thermal treatment of the contact might be due to the excess Ag doping in YBa2Cu3O7−x. Ag island formation, as revealed by scanning electron microscopy after thermal treatment of the contact, is a limitation of Ag for use as a good contact electrode for very thin superconducting films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346878
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  • 5
    Electronic Resource
    Electronic Resource
    Interactions between superconducting YBa2Cu3O7−x and silicon using different buffer layers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3364-3366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−x (YBCO) thin films were deposited on Si substrates using rf magnetron sputtering from a stoichiometric YBa2Cu3O7−x target. Either metallic RuO2 or insulating yttria-stabilized zirconia (YSZ) was used as a buffer layer to nucleate the superconducting film, and also to prevent interactions between Si and YBCO. The electrical properties of the Si were studied using deep level transient spectroscopy on a structure of metal/SiO2 (∼15 A(ring))/Si diode after removing YBCO and the buffer layer. The introduction of a new deep level in the Si at EA = Ev + 0.244 eV after YBCO deposition, where YSZ (∼100 nm) was used as a buffer layer, was attributed to Cu after interaction between YBCO and Si. However, this energy level was not found in the Si if RuO2 was used as a buffer. The degradation of electrical properties of the Si after YBCO deposition places limitations on the choice of buffer layers in order to realize the integration between superconductor and semiconductor as used in passive or hybrid electronic devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349274
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  • 6
    Electronic Resource
    Electronic Resource
    Passivation of superconducting YBa2Cu3O7−x thin films by a wet fluoride vapor method (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2528-2531 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wet hydrofluoric acid (HF) vapor was used to treat YBa2Cu3O7−x superconducting thin films in order to realize highly controllable passivation layers on the film surface. Improved resistance to degradation by water of the films was realized by using this novel technique. In situ measurement of the resistance of the thin films, with and without wet HF vapor treatment, showed completely different behavior during deionized water immersion. Both Auger electron spectroscopy surface scanning and depth profile demonstrated the incorporation of fluorine in the surface after wet HF vapor treatment. The formation of an amorphous layer on the film surface, which was the reaction product between HF and erosion materials on the film surface, might be directly related to the improved water resistance of the superconducting YBa2Cu3O7−x thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345507
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  • 7
    Electronic Resource
    Electronic Resource
    In situ laser deposition of superconducting YBa2Cu3O7−x thin films on GaAs substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7170-7172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly c-axis oriented superconducting YBa2Cu3O7−x (YBCO) thin films with a zero-resistance temperature of 85.5 K and a critical current density of 1.9×103 A/cm2 at 77 K and zero field, respectively, have been deposited on GaAs substrates by in situ laser ablation. A barrier layer using a combination of yttrium-stabilized ZrO2 (YSZ) and Si3N4 proved to be a most successful buffer on GaAs when YBCO was deposited at relatively high temperature, around 650 °C. The electrical properties of the YBCO films were very dependent on YSZ deposition conditions. The electrical and structural relationship between YBCO films and the YSZ deposition conditions is further investigated by cross-section scanning electron microscopy and Auger electron spectroscopy depth profiling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349756
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  • 8
    Electronic Resource
    Electronic Resource
    SiO2 and Si3N4 passivation layers on Y-Ba-Cu-O thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 452-454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-Tc Y-Ba-Cu-O superconductor thin films were passivated with thermally evaporated SiO2 or rf magnetron sputtered Si3N4. Thermal evaporation of SiO2 on the Y-Ba-Cu-O thin-film surface did not degrade the zero resistance temperature of Y-Ba-Cu-O films. A seriously lowered zero resistance temperature of Y-Ba-Cu-O films was found if Si3N4 was sputtered onto the Y-Ba-Cu-O film surface. A one month exposure of the Y-Ba-Cu-O film to the environmental air did not change the Tc onset of the superconductor thin film but gave a slight decrease of Tc zero with SiO2 as the surface passivation layer. High-frequency capacitance-voltage studies were made on metal-insulator-superconductor to investigate the interface and surface properties of Ya-Ba-Cu-O thin films. The experimental data suggested that a very thin layer semiconductor phase Y-Ba-Cu-O was produced between Y-Ba-Cu-O films and the insulator films during the deposition of the passivation film onto the Y-Ba-Cu-O surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343848
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  • 9
    Electronic Resource
    Electronic Resource
    Role of atomic arrangements at interfaces on the phase control of epitaxial TiO2 films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1174-1176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial rutile-TiO2 and anatase-TiO2 films were grown at 800 °C on Al2O3(1¯102¯) and LaAlO3(001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also deposited epitaxial rutile-TiO2 and anatase-TiO2 films on conductive RuO2 and La0.5Sr0.5CoO3 electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO2 film grown on RuO2 showed a very broad peak in the visible light region. An epitaxial anatase-TiO2 film grown on La0.5Sr0.5CoO3 showed a strong peak with a threshold energy of 3.05 eV. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450249
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 533-535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have epitaxially grown Ba0.6Sr0.4TiO3 (BST-0.4) thin films on MgO(001) substrates. By inserting a very thin Ba1−xSrxTiO3 (x=0.1–0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate the degree of the stress in BST-0.4 films. We have controlled the stress states, i.e., the lattice distortion ratio (D=in-plane lattice constant/out-of-plane lattice constant) of the BST-0.4 films by varying the chemical composition of the interlayers. We have found that small variations of D value can result in significantly large changes of dielectric properties. A BST-0.4 film under small tensile stress, which has a D value of 1.0023, shows the largest dielectric permittivity and tunability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1340863
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