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  • 1
    Electronic Resource
    Electronic Resource
    Charge injection and transport in single-layer organic light-emitting diodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3162-3164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental and device model results for the current–voltage characteristics of a series of organic diodes. We consider three general types of structures: electron only, hole only, and bipolar devices. Electron and hole mobility parameters are extracted from the corresponding single carrier structures and then used to describe the bipolar devices. The device model successfully describes the experimental results for: electron only devices as thickness is varied, hole only devices as the contact metals are varied, and bipolar devices are both the thickness and the contact metals are varied. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122706
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial YBa2Cu3O7−δ thin films on SrRuO3/Pt/MgO (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YBa2Cu3O7−δ (YBCO) thin films were deposited on (100) MgO using platinum and SrRuO3 (SRO) buffer layers by pulsed laser deposition. The films were (001) textured normal to substrate surface with a high degree of in-plane orientation with respect to the substrate's major axes. YBCO films showed superconducting transition temperature (Tco) at 91 K and critical current densities were found to be 2–3×106 A/cm2 at 77 K and zero field. An ion beam minimum channeling yield of 16% was obtained for YBCO films, indicating high crystallinity. The orientation relationship for this epitaxial multilayer structure was found to be (100) YBCO(parallel)(100) SRO(parallel)(100)Pt(parallel)(100) MgO. This result showed that high-quality superconducting thin films can be deposited on metal with an appropriate buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111965
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  • 3
    Electronic Resource
    Electronic Resource
    Superconductor GdBa2Cu3O7−δ edge junctions with lattice-matched Y0.6Pr0.4Ba2Cu3O7−δ barriers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2871-2873 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature-superconductor Josephson junctions with an edge geometry of superconductor/normal-metal/superconductor have been fabricated on yttria-stabilized zirconia substrates by engineering the electrode and N-layer material to reduce the lattice mismatches (a, b, and c). With GdBa2Cu3O7−δ as electrodes and Pr-doped Y0.6Pr0.4Ba2Cu3O7−δ as a barrier, the lattice mismatches from electrode and barrier layer are reduced to a very low level. The junctions fabricated with such a design demonstrate resistively shunted junction current-voltage characteristics under dc bias at temperatures in the range of 77–88 K. The quite low specific interface resistivity on the order of 10−10 Ω cm2 indicates that the junction performance is controlled by the normal-metal (N) layer material instead of the interfaces. The use of lattice-matched electrode and N-layer material is one of the key design rules to obtain controllable high-temperature superconductor Josephson junctions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360094
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of p+ microcrystalline films of SiC:H deposited by conventional rf glow discharge (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2672-2674 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a conventional rf glow discharge, we have grown microcrystalline p+ SiC:H films having conductivities 2–2×10−3 (Ω cm)−1 and activation energies 0.05–0.1 eV with carbon concentrations 0–6 at. %, respectively. Increasing the carbon content suppresses the microcrystallinity. The choice of substrate is crucial to initiating the immediate onset of microcrystalline growth in thin (∼200–400 A(ring)) films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100193
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  • 5
    Electronic Resource
    Electronic Resource
    Chemical potential pinning due to equilibrium electron transfer at metal/C60-doped polymer interfaces (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3227-3231 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electroabsorption measurements of the built-in electrostatic potential in metal/C60-doped polymer/metal structures to investigate chemical potential pinning due to equilibrium electron transfer from a metal contact to the electron acceptor energy level of C60 molecules in the polymer film. The built-in potentials of a series of structures employing thin films of both undoped and C60-doped poly[2-methoxy, 5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) were measured. For undoped MEH-PPV, which has an energy gap of about 2.4 eV, the maximum built-in potential is about 2.1 eV, whereas for C60-doped MEH-PPV the maximum built-in potential decreases to 1.5 eV. Electron transfer to the C60 molecules close to the metal interface pins the chemical potential of the metal contact near the electron acceptor energy level of C60 and decreases the built-in potential of the structure. From the systematic dependence of the built-in potential on the metal work function we find that the electron acceptor energy level of C60 in MEH-PPV is about 1.7 eV above the hole polaron energy level of MEH-PPV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364154
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  • 6
    Electronic Resource
    Electronic Resource
    Mechanism of the growth of amorphous and microcrystalline silicon from silicon tetrafluoride and hydrogen (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1757-1760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the growth of amorphous (a-Si:H,F) and of microcrystalline (μc-Si) silicon over trench patterns in crystalline silicon substrates. We vary the conditions of the SiF4-H2 glow discharge from deposition to etching. All deposited films form lips at the trench mouth and are uniformly thick on the trench walls. Therefore, surface diffusion is not important. The results of a Monte Carlo simulation suggest that film growth is governed by a single growth species with a low (∼0.2) sticking coefficient, in combination with a highly reactive etching species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345600
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  • 7
    Electronic Resource
    Electronic Resource
    Device physics of single layer organic light-emitting diodes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5767-5774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental and device model results for electron only, hole only, and bipolar organic light-emitting diodes fabricated using a soluble poly (p-phenylene vinylene) based polymer. Current–voltage (I–V) characteristics were measured for a series of electron only devices in which the polymer thickness was varied. The I–V curves were described using a device model from which the electron mobility parameters were extracted. Similarly, the hole mobility parameters were extracted using a device model description of I–V characteristics for a series of hole only devices where the barrier to hole injection was varied by appropriate choices of hole injecting electrode. The electron and hole mobilities extracted from the single carrier devices are then used, without additional adjustable parameters, to describe the measured current–voltage characteristics of a series of bipolar devices where both the device thickness and contacts were varied. The model successfully describes the I–V characteristics of single carrier and bipolar devices as a function of polymer thickness and for structures that are contact limited, space charge limited, and for cases in between. We find qualitative agreement between the device model and measured external luminance for a thickness series of devices. We investigate the sensitivity of the device model calculations to the magnitude of the bimolecular recombination rate prefactor. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371591
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  • 8
    Electronic Resource
    Electronic Resource
    Device model investigation of bilayer organic light emitting diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1974-1982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic materials that have desirable luminescence properties, such as a favorable emission spectrum and high luminescence efficiency, are not necessarily suitable for single layer organic light-emitting diodes (LEDs) because the material may have unequal carrier mobilities or contact limited injection properties. As a result, single layer LEDs made from such organic materials are inefficient. In this article, we present device model calculations of single layer and bilayer organic LED characteristics that demonstrate the improvements in device performance that can occur in bilayer devices. We first consider an organic material where the mobilities of the electrons and holes are significantly different. The role of the bilayer structure in this case is to move the recombination away from the electrode that injects the low mobility carrier. We then consider an organic material with equal electron and hole mobilities but where it is not possible to make a good contact for one carrier type, say electrons. The role of a bilayer structure in this case is to prevent the holes from traversing the device without recombining. In both cases, single layer device limitations can be overcome by employing a two organic layer structure. The results are discussed using the calculated spatial variation of the carrier densities, electric field, and recombination rate density in the structures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372123
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  • 9
    Electronic Resource
    Electronic Resource
    Trapping time in processed polycrystalline silicon measured by picosecond time-resolved reflectivity (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2316-2321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used the methods of picosecond time-resolved reflectivity to measure the carrier lifetime in fine grain polycrystalline silicon films grown by low pressure chemical vapor deposition at 625 °C. After monatomic hydrogen diffusion or implantation with phosphorus ions followed by high temperature annealing (1150 °C), the trapping time τ increased from 40 to 150 ps, consistent with passivation of the grain boundaries or an increase in grain size, respectively. If implantation was not followed by annealing, τ decreased to less than 10 ps, while if it was followed by low temperature annealing (900 °C), which approximately restored the original grain size, τ recovered to 50 ps, very close to the trapping time measured in the as-grown samples. In all cases, we found indications that trapping of carriers was much faster than their subsequent recombination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341047
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  • 10
    Electronic Resource
    Electronic Resource
    Raman scattering study of InAs/GaInSb strained layer superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5608-5614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a Raman scattering study of the InAs/GaInSb superlattice. This new superlattice is promising as a long wavelength infrared detector material. The samples were grown by molecular beam epitaxy and their structural parameters were determined by Rutherford backscattering and x-ray diffraction. Samples were grown on [001] GaAs substrates with GaSb buffers, and directly on [001] GaSb substrates. Cross-sectional transmission electron micrographs show that for the samples grown on GaAs substrates, a high density of dislocations was generated at the GaAs-GaSb interface, and many of these dislocations thread through the superlattice. The samples grown directly on GaSb had a much lower dislocation density. The Raman spectra of the InAs/GaInSb superlattice shows a single peak, which is a superposition of scattering from the LO phonons in InAs and in GaInSb. For unstrained InAs and GaInSb, the LO phonon energies are sufficiently separated that they would be well resolved in Raman scattering. However, the strain introduced into these materials by the pseudomorphic boundary conditions moves the two phonons closer together energetically so that only one peak is seen in the Raman spectrum of the superlattice. A high energy Raman scattering tail is seen in some of the samples. This tail is from Ga-As local modes. Such modes may be due to As incorporation in the GaInSb, Ga incorporation in the InAs or phase mixing at the interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350174
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