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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 75 (1953), S. 4273-4275 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 77 (1955), S. 5892-5895 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 78 (1956), S. 3668-3671 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-0428
    Keywords: Diabetic vascular disease ; diabetes mellitus ; diabetic autonomie neuropathy ; vasomotor nerves ; arterioles ; morphometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary A quantitative ultrastructural analysis was made of the terminal innervation of epineurial arterioles in the sural nerve of 6 diabetic and 6 nondiabetic patients of comparable age (mean±SD: 68 ±9 non-diabetic, 65±16 diabetic) with end stage peripheral vascular disease. The results demonstrated specific differences, identifiable morphometrically, in the pattern of innervation of epineurial vessels of diabetics compared with non-diabetics. The differences were: 1) in the diabetic group the proportion of perivascular axons found less than 7 μm from the nearest smooth muscle cell was significantly less than in the non-diabetic group (p 〈0.001); 2), the mean distance of the axons from their effector sites, the vascular smooth muscle cells, was nearly twice as far in the diabetic group compared with the nondiabetic group (p 〈0.05); and 3) the mean absolute number of axons less than 7 μ from the arteriole in the diabetic group was significantly less than in the non-diabetic group (p 〈0.01). These results demonstrate that the neuropathy associated with diabetes mellitus also involves the autonomic terminal innervation of some blood vessels. In addition, this neuropathy selectively affects the vasomotor nerves closer than 7 μm to the media.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-0428
    Keywords: Diabetic vascular disease ; diabetes mellitus ; diabetic autonomic neuropathy ; vasomotor nerves ; arterioles ; morphometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary A quantitative ultrastructural analysis was made of the terminal innervation of epineurial arterioles in the sural nerve of 6 diabetic and 6 nondiabetic patients of comparable age (mean ± SD: 68 ±9 non-diabetic, 65±16 diabetic) with end stage peripheral vascular disease. The results demonstrated specific differences, identifiable morphometrically, in the pattern of innervation of epineurial vessels of diabetics compared with non-diabetics. The differences were: 1) in the diabetic group the proportion of perivascular axons found less than 7 μm from the nearest smooth muscle cell was significantly less than in the non-diabetic group (p〈0.001); 2) the mean distance of the axons from their effector sites, the vascular smooth muscle cells, was nearly twice as far in the diabetic group compared with the nondiabetic group (p〈0.05); and 3) the mean absolute number of axons less than 7 μm from the arteriole in the diabetic group was significantly less than in the non-diabetic group (p〈0.01). These results demonstrate that the neuropathy associated with diabetes mellitus also involves the autonomic terminal innervation of some blood vessels. In addition, this neuropathy selectively affects the vasomotor nerves closer than 7 μm to the media.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Earth and Planetary Sciences 12 (1984), S. 445-488 
    ISSN: 0084-6597
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1872-1874 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented on the effects of growth conditions on hydrogen incorporation in Si thin films deposited with a remote hydrogen plasma. Oxygen contamination of the films was significantly reduced by replacement of the quartz tube that is commonly used to contain the hydrogen plasma with an alumina tube, with a concomitant increase in the electrical conductivity of P-doped a-Si:H films. Hydrogen incorporation was examined with a remote deuterium plasma and downstream injection of SiH4. As the gas flow ratio D2:SiH4 increases, the ratio D:H in the film changes as a consequence of the increasing flux of D at the growing surface. High silane dilution also promotes the formation of microcrystalline silicon, which itself affects H incorporation.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2191-2192 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using infrared spectroscopy, local vibrational modes in GaP:Zn exposed to a remote hydrogen or deuterium plasma were observed. The modes at 2379.0 and 1729.4 cm−1 are assigned to hydrogen—phosphorus and deuterium—phosphorus bond-stretching modes of complexes adjacent to the zinc acceptors. The isotopic ratio r=νH/νD=1.3756 is very close to that of the zinc-hydrogen complex in InP (r=1.3744), which suggests that they have the same structure. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 740-748 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of diffusion of monatomic hydrogen and deuterium in InGaAs/AlGaAs quantum wells were studied using photoluminescence (PL) and secondary-ion-mass spectroscopy. The multiquantum-well structures were grown by molecular-beam epitaxy and hydrogenated with a remote plasma. A significant increase in 77 K PL integrated intensity of bound excitons was observed after hydrogenation. This is attributed to the passivation of nonradiative recombination centers within InGaAs/AlGaAs quantum wells. A series of studies demonstrating the increase in passivation efficiency with increasing Al concentration in the barriers, the stability of the hydrogenation upon annealing to temperatures of up to and above 450 °C, the ratio of the deuterium concentration for samples with different barrier thicknesses, and the comparison of strained versus relaxed quantum wells, all strongly suggest that the passivated nonradiative recombination centers are interface defects. The stability of this hydrogen passivation at temperatures commonly used in device processing is particularly promising for device applications.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 381-386 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, nitrogen-rich silicon nitride plasma deposited under conditions minimizing Si—H bonding is shown to possess extremely low bulk electron trapping rates which are as low or lower than plasma-deposited oxides produced using He dilution. The bulk trap density, measured by avalanche injection decreases as the rf power is decreased. The total charge trapped within these silicon nitrides reaches a saturation value determined by high field detrapping in thick nitride films.
    Type of Medium: Electronic Resource
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