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  • 1
    Digitale Medien
    Digitale Medien
    Spatial profiling of electron traps in silicon nitride thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5212-5221 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A method is described for determining the spatial profiles of electron traps in dielectric thin films. The method is an extension of avalanche injection and charge centroid measurements. By determining the change in the charge centroid and the injected charge after a sequential series of pulses, the densities of electron traps as a function of depth in both low-pressure-chemical vapor deposited (LPCVD) and plasma-enhanced-chemical vapor deposited (PECVD) silicon nitrides were determined. Contrary to previous assumptions of a uniform trap density in the nitride, both nitrides exhibit interface trap densities extending 10–15 nm into the film that is between 6 and 15 times larger than the bulk trap density of 0.5–2×1018 cm−3. The trap capture cross section was determined to be 6–10×10−13 cm2. The interface trap density of commercial LPCVD nitride deposited at higher temperature was higher than that found for PECVD nitride. The spatial resolution and limitations of the profiling technique, avalanche injection and charge trapping were modeled by numerically solving equations describing charge trapping, current continuity, and electric field. Important issues such as the effects of field, trap density and detrapping on the profiling analysis are examined both experimentally and through the use of simulation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347064
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  • 2
    Digitale Medien
    Digitale Medien
    Deposited silicon nitride with low electron trapping rates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 381-386 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article, nitrogen-rich silicon nitride plasma deposited under conditions minimizing Si—H bonding is shown to possess extremely low bulk electron trapping rates which are as low or lower than plasma-deposited oxides produced using He dilution. The bulk trap density, measured by avalanche injection decreases as the rf power is decreased. The total charge trapped within these silicon nitrides reaches a saturation value determined by high field detrapping in thick nitride films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354121
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  • 3
    Digitale Medien
    Digitale Medien
    Effect of helium dilution during plasma-enhanced deposition on electron trapping in silicon dioxide thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 695-697 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of helium dilution during plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide thin films was studied with avalanche injection and charge trapping techniques. It is shown that, while oxides deposited with He dilution can have low bulk trap densities, they are not lower than films deposited without He dilution. We thus present a more complete specification than previously available of the range of gas-phase deposition conditions that produce device-grade silicon dioxide.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106540
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  • 4
    Digitale Medien
    Digitale Medien
    Synthesis of copper(II) and nickel(II) of 1,8-dimethyl-5,12-diethyl-1,4,8,11-tetra-azacyclotetradeca-4,11-diene and properties of nickel(II) complexes of N-alkyldiene N"4 macrocycles
    Amsterdam : Elsevier
    Polyhedron 13 (1994), S. 2061-2066 
    Details
    ISSN: 0277-5387
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0277-5387(00)83490-7
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  • 5
    Digitale Medien
    Digitale Medien
    Immunochemical similarities among the hemolymph juvenile hormone binding proteins of moths (1991)
    Springer
    Cellular and molecular life sciences 47 (1991), S. 945-948 
    Details
    ISSN: 1420-9071
    Schlagwort(e): Juvenile hormone ; Manduca sexta ; Lepidoptera ; immunotaxonomy ; monoclonal antibodies ; hemolymph
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Medizin
    Notizen: Abstract The hemolymph from various species of moths was analyzed for cross-reactivity with a panel of six monoclonal antibodies made against the hemolymph juvenile hormone binding protein ofManduca sexta. With the exception of one antibody, the immunoreactivity was limited to the sphingid family. One monoclonal antibody cross-reacted with a number of lepidopteran species; however, families such as Noctuidae and Pyralidae, known to have high affinity, low molecular weight juvenile hormone binding proteins, did not cross-react. Immunological cross-reactivity withManduca sexta juvenile hormone binding protein in several primitive moth families supports the current model of phylogenetic relationships in the order Lepidoptera.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01929888
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  • 6
    Digitale Medien
    Digitale Medien
    Theory for the number of genes affecting quantitative characters (1977)
    Springer
    Theoretical and applied genetics 50 (1977), S. 153-161 
    Details
    ISSN: 1432-2242
    Schlagwort(e): Gene Number ; Estimation of Gene Number ; Variance of the Estimation of Gene Number
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie
    Notizen: Summary A general expression for gene number estimation which encompasses the conventional formula was derived. It provides a basis for gene number estimation from the data of recurrent selection experiments that are not of sufficient duration to measure total response to selection. Gene number estimates are considerably more reliable when heritability is high. The effect of heritability on sampling variance is particularly important when gene number is large. Generally the most effective ways of decreasing the variance of a gene number estimate will be 1) to increase the number of generations in a primary selection program, 2) to increase the number of generations in the two way selection program and 3) to increase population size.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00277736
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  • 7
    Digitale Medien
    Digitale Medien
    Theory for the number of genes affecting quantitative characters (1977)
    Springer
    Theoretical and applied genetics 50 (1977), S. 163-172 
    Details
    ISSN: 1432-2242
    Schlagwort(e): Biases ; Drift ; Inequality of Gene Effects ; Linkage Disequilibrium ; Epistasis
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie
    Notizen: Summary Bias in the estimation of gene number from a population of finite size will be reduced when the number of generations and the selection differential in the primary selection program are increased. A procedure to minimize bias due to dominance is proposed. Bias due to linkage disequilibrium is decreased by long generations of selection and small change of linkage disequilibrium. Bias due to inequality of gene effects was studied assuming that gene effects follow a half normal distribution. The epistatic bias arising from multiplicative gene effects disappears when the logarithms of the original measurements are considered even though the gene number estimate is unsatisfactory without transformation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00277737
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  • 8
    Digitale Medien
    Digitale Medien
    Optimal topology design of structures under dynamic loads (1999)
    Springer
    Structural and multidisciplinary optimization 17 (1999), S. 208-218 
    Details
    ISSN: 1615-1488
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract When elastic structures are subjected to dynamic loads, a propagation problem is considered to predict structural transient response. To achieve better dynamic performance, it is important to establish an optimum structural design method. Previous work focused on minimizing the structural weight subject to dynamic constraints on displacement, stress, frequency, and member size. Even though these methods made it possible to obtain the optimal size and shape of a structure, it is necessary to obtain an optimal topology for a truly optimal design. In this paper, the homogenization design method is utilized to generate the optimal topology for structures and an explicit direct integration scheme is employed to solve the linear transient problems. The optimization problem is formulated to find the best configuration of structures that minimizes the dynamic compliance within a specified time interval. Examples demonstrate that the homogenization design method can be extended to the optimal topology design method of structures under impact loads.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01195945
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