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  • 1
    Electronic Resource
    Electronic Resource
    Deposited silicon nitride with low electron trapping rates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 381-386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, nitrogen-rich silicon nitride plasma deposited under conditions minimizing Si—H bonding is shown to possess extremely low bulk electron trapping rates which are as low or lower than plasma-deposited oxides produced using He dilution. The bulk trap density, measured by avalanche injection decreases as the rf power is decreased. The total charge trapped within these silicon nitrides reaches a saturation value determined by high field detrapping in thick nitride films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354121
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of a remote hydrogen plasma reactor with electron spin resonance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2631-2634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas phase chemical reactions, of importance in the deposition of amorphous semiconductors, were studied in a remote hydrogen plasma reactor with electron spin resonance (ESR). The following reactant pairs (and their observed room-temperature rate coefficients) were characterized: (1) H+SiH4(2.4×1011 cm3 mole−1s−1), (2) D+SiH4 (2.1×1011 cm3 mole−1 s−1), and (3) H+C2H2 (1.2×1010 cm3 mole−1 s−1). The interpretation of these coefficients in terms of primary and secondary gas phase reactions is discussed, and the values are compared where possible with previously published data. In addition, the paramagnetic centers of the silicon-based film that is deposited in situ during the ESR measurement can now be microscopically identified in light of recent studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348655
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  • 3
    Electronic Resource
    Electronic Resource
    Spatial profiling of electron traps in silicon nitride thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5212-5221 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is described for determining the spatial profiles of electron traps in dielectric thin films. The method is an extension of avalanche injection and charge centroid measurements. By determining the change in the charge centroid and the injected charge after a sequential series of pulses, the densities of electron traps as a function of depth in both low-pressure-chemical vapor deposited (LPCVD) and plasma-enhanced-chemical vapor deposited (PECVD) silicon nitrides were determined. Contrary to previous assumptions of a uniform trap density in the nitride, both nitrides exhibit interface trap densities extending 10–15 nm into the film that is between 6 and 15 times larger than the bulk trap density of 0.5–2×1018 cm−3. The trap capture cross section was determined to be 6–10×10−13 cm2. The interface trap density of commercial LPCVD nitride deposited at higher temperature was higher than that found for PECVD nitride. The spatial resolution and limitations of the profiling technique, avalanche injection and charge trapping were modeled by numerically solving equations describing charge trapping, current continuity, and electric field. Important issues such as the effects of field, trap density and detrapping on the profiling analysis are examined both experimentally and through the use of simulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347064
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1−xAs quantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 740-748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of diffusion of monatomic hydrogen and deuterium in InGaAs/AlGaAs quantum wells were studied using photoluminescence (PL) and secondary-ion-mass spectroscopy. The multiquantum-well structures were grown by molecular-beam epitaxy and hydrogenated with a remote plasma. A significant increase in 77 K PL integrated intensity of bound excitons was observed after hydrogenation. This is attributed to the passivation of nonradiative recombination centers within InGaAs/AlGaAs quantum wells. A series of studies demonstrating the increase in passivation efficiency with increasing Al concentration in the barriers, the stability of the hydrogenation upon annealing to temperatures of up to and above 450 °C, the ratio of the deuterium concentration for samples with different barrier thicknesses, and the comparison of strained versus relaxed quantum wells, all strongly suggest that the passivated nonradiative recombination centers are interface defects. The stability of this hydrogen passivation at temperatures commonly used in device processing is particularly promising for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353331
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: "Intrinsic stress in hydrogenated amorphous silicon deposited with a remote hydrogen plasma'' [J. Appl. Phys. 71, 2628 (1992)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4727-4727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354101
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  • 6
    Electronic Resource
    Electronic Resource
    Intrinsic stress in hydrogenated amorphous silicon deposited with a remote hydrogen plasma (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2628-2631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In hydrogenated amorphous silicon it is demonstrated that the maximum compressive intrinsic stress correlates with the optimum electronic properties. Undoped films were deposited over a range of temperatures in a remote hydrogen plasma (RHP) reactor and, for comparison, in a rf glow discharge (GD) system. The dependence of the stress on deposition temperature is qualitatively identical for the two reactors. Quantitatively, both the maximum compressive stress and the optimized electronic properties (e.g., minimum defect density) are obtained at 400 °C for the RHP films and near 250 °C for the GD films. Additionally, it is demonstrated that the transition from amorphous to microcrystalline silicon, induced by high hydrogen dilution, is accompanied by a reduction in compressive stress. Formation of compressive stress during RHP growth is ascribed to the insertion of hydrogen into the rigid silicon network immediately beneath the growing surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351057
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  • 7
    Electronic Resource
    Electronic Resource
    Comment on "Hydrogen–oxygen interaction in silicon at around 50 °C" [J. Appl. Phys. 83, 2988 (1998)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4635-4636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a study of the kinetics of binding of presumed H2 complexes in silicon to monatomic oxygen impurities, Markevich and Suezawa [J. Appl. Phys. 83, 2988 (1998)] were able to infer a diffusion coefficient for the isolated H2 species. We point out here that to within experimental accuracy this diffusion coefficient agrees both in magnitude and in temperature dependence with the diffusion coefficient measured by us in 1991 for a neutral, spinless hydrogen species commonly found in plasma-hydrogenated n-type silicon. The agreement not only supports the validity of both types of measurements, but also encourages the interpretation that the same hydrogen complex (presumably H2 at or near a tetrahedral site) was dominant in both experiments and diffuses by a single mechanism dominant from 305 to 473 K and independent of concentration over a wide range. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373117
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  • 8
    Electronic Resource
    Electronic Resource
    Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3820-3823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to measure small changes in gain and distributed loss in laser diodes during life testing is described. The evolution of the gain spectrum was computed by measuring the true spontaneous emission spectrum and the lasing wavelength of the diode with time. This method was applied to investigate the gain spectrum of InGaN multiple quantum well ridge waveguide laser diodes operating under continuous-wave (cw) conditions during diode life testing. During lasing there were large changes in the light output power versus current characteristic, but no significant change in the forward current-voltage characteristic. No catastrophic failure occurred; the light output power decreased continuously during life testing until the device stopped lasing under cw conditions. We observed an increase in pulsed threshold current of 15(±1)%, a decrease in gain at fixed current of 11(±2)%, and a slight increase in the total optical losses of 4(±2)%. These changes occurred primarily while the device was lasing under cw conditions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290258
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  • 9
    Electronic Resource
    Electronic Resource
    Piptadenia Alkaloids. Indole Bases of P. peregrina (L.) Benth. and Related Species (1955)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 77 (1955), S. 5892-5895 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01627a034
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  • 10
    Electronic Resource
    Electronic Resource
    Crystalline Ozonides from cis—trans-Ethylene Derivatives1 (1953)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 75 (1953), S. 4273-4275 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01113a036
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