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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial YBa2Cu3O7−δ thin films on SrRuO3/Pt/MgO (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 634-636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YBa2Cu3O7−δ (YBCO) thin films were deposited on (100) MgO using platinum and SrRuO3 (SRO) buffer layers by pulsed laser deposition. The films were (001) textured normal to substrate surface with a high degree of in-plane orientation with respect to the substrate's major axes. YBCO films showed superconducting transition temperature (Tco) at 91 K and critical current densities were found to be 2–3×106 A/cm2 at 77 K and zero field. An ion beam minimum channeling yield of 16% was obtained for YBCO films, indicating high crystallinity. The orientation relationship for this epitaxial multilayer structure was found to be (100) YBCO(parallel)(100) SRO(parallel)(100)Pt(parallel)(100) MgO. This result showed that high-quality superconducting thin films can be deposited on metal with an appropriate buffer layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111965
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  • 2
    Electronic Resource
    Electronic Resource
    Orientation of YBa2Cu3O7−x films on unbuffered and CeO2-buffered yttria-stabilized zirconia substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4753-4760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x (YBCO) films deposited by pulsed laser ablation on unbuffered and CeO2-buffered yttria-stabilized zirconia (YSZ) substrates were studied by x-ray diffraction and transmission electron microscopy to investigate film orientation. From φ scans it was determined that the unbuffered films possess two major in-plane orientation relationships with the substrate. Both have (001)YBCO(parallel)(001)YSZ, with either [100]YBCO(parallel)[100]YSZ or [110]YBCO(parallel)[100]YSZ, a 0° or 45° orientation, respectively. As deposition temperature increases, satellite peaks that straddle the 0° or 45° orientations develop. The Σ boundary and near coincident site lattice descriptions are applied to the discussion of these misorientations. In general the CeO2-buffered YBCO films align with to the 45° orientation to the CeO2 buffer layer. Out-of-plane film orientation was investigated for both unbuffered and CeO2-buffered YBCO films and expressed as a ratio of the amount of c⊥ material to a⊥ material. Buffered films exhibited c⊥ material to a⊥ material ratios approximately twice those of unbuffered films. Transmission electron microscopy combined with the x-ray data was used to develop an explanation for the trends in the variation of the c⊥/a⊥ ratio with film deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357245
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  • 3
    Electronic Resource
    Electronic Resource
    Properties of YBa2Cu3O7−δ films upon low fluence laser irradiation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7161-7163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical responses and crystallinity of YBa2Cu3O7−δ films were measured as a function of excimer laser exposure (308 nm) and laser fluences ranging from 20 to 150 mJ/cm2. Tc and Jc were measured with an inductive technique and with standard dc transport measurements. The crystallinity of the films, as determined by Rutherford backscattering spectrometry, scanning electron microscopy, and x-ray diffraction, was altered by the formation of a degraded surface layer, even at fluences well below the melting threshold. The critical current of a film can be modified with a high degree of accuracy and can be correlated with a boundary layer in the film. This allows for the critical current to be decreased over three orders of magnitude with a resolution of 255 A/cm2 per laser shot.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349778
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  • 4
    Electronic Resource
    Electronic Resource
    Correlation of surface topography and flux pinning in superconducting YBaCuO films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5099-5102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface topography of YBa2Cu3O7 thin films prepared by pulsed laser deposition is studied by atomic force microscopy and scanning tunneling microscopy. The possible contributions from observed structural features to the critical current density Jc are discussed. It is shown that the contribution of the screw dislocations associated with some structures can be either repulsive or attractive, depending on the dominant pinning mechanism. At low magnetic fields (to about 0.25 kOe) these dislocations can account for the observed critical current density values (Jc(approximately-greater-than)1011 A/m2) while for larger fields the higher-density steplike growth structures can account for significant values of Jc. It is shown that the pinning strength associated with pinning at steps varies inversely with thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350612
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  • 5
    Electronic Resource
    Electronic Resource
    A versatile substrate heater for use in highly oxidizing atmospheres (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 437-440 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report the design, construction and performance of a versatile substrate heater that meets the severe design constraints of heating substrates to high temperatures (≤900 °C) in relatively high pressures (hundreds of Torr) of oxidizing gases. The heater has been used to heat substrates by both thermal conduction via a conductive high temperature cement and by direct radiation. In particular, the production of high-quality YBa2Cu3O7−δ thin films grown on radiatively heated LaAlO3 substrates is demonstrated using the pulsed laser deposition (PLD) technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142139
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  • 6
    Electronic Resource
    Electronic Resource
    Crystal growth and optical characterization of cerium-doped Lu1.8Y0.2SiO5 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7360-7362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Czochralski growth of cerium-doped Lu1.8Y0.2SiO5 (LYSO) from a 90/10 solution of Lu2SiO5 (LSO) and Y2SiO5 (YSO) is demonstrated. The alloyed scintillator retains the favorable growth properties of YSO and the desirable physical and optical scintillator properties of LSO. Radioluminescence, thermally stimulated luminescence, optical absorption, and lifetime measurements confirm the equivalence of LYSO and LSO optical properties. Advantages of LYSO Czochralski growth relative to LSO include reduced melting point, less propensity for formation of crystalline inclusions, lower cost of starting material, and easier incorporation of cerium into the host lattice. This material offers an attractive alternative to LSO for scintillator applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328775
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  • 7
    Electronic Resource
    Electronic Resource
    Intrinsic trapping sites in rare-earth and yttrium oxyorthosilicates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5308-5310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Similarity among the thermally stimulated luminescence glow curves of undoped Lu2SiO5 and Ce3+-doped oxyorthosilicates possessing the monoclinic C2/c structure strongly suggests the luminescence traps are intrinsic in origin. They are most likely associated with the configuration of oxygen ions in the vicinity of not only the Ce3+ ion, as suggested in previous work, but also the host lanthanide ion. The optical absorption spectrum of pristine Lu2SiO5 shows the presence of intrinsic absorption centers that are enhanced upon x irradiation as seen in other oxides containing oxygen related point defects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371518
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  • 8
    Electronic Resource
    Electronic Resource
    Synthesis of epitaxial Pt on (100)Si using TiN buffer layer by pulsed laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2693-2695 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112608
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  • 9
    Electronic Resource
    Electronic Resource
    Properties of epitaxial SrRuO3 thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2434-2436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrRuO3 thin films were deposited on (100) LaAlO3 using pulsed laser deposition. The films were (001) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the substrate's major axes. An ion beam minimum yield of 2.5% was obtained for the films, indicating high crystallinity. The films exhibited metallic behavior with a room temperature resistivity of ∼200 mW cm. A kink in the resistivity, corresponding to a ferromagnetic phase transition, was observed at ∼160 K. It was found that SrRuO3 is structurally and chemically compatible with the YaB2Cu3O7−d (YBCO) superconductors. High quality YBCO films were obtained on SrRuO3 LaAlO3. Multilayers of YBCO/SrRuO3 were successfully fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109388
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  • 10
    Electronic Resource
    Electronic Resource
    Creation of 45° grain-boundary junctions by lattice engineering (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1381-1383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in-plane, orientational relationships between LaAlO3, SrTiO3, yttria-stabilized zirconia, MgO, CeO2, BaZrO3, and YBa2Cu3O7−δ(YBCO) are studied. Using a idea of continuous lattice match and photolithographic technique, a 45° YBCO grain-boundary junction can be created on most substrates. The key element of the process is the utilization of a bridge layer. In addition to MgO bridge material, BaZrO3 was found to work functionally well. The crystallinity of the bridge layer is critical to obtain a clean boundary junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107297
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