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  • 1
    Electronic Resource
    Electronic Resource
    Orientation of YBa2Cu3O7−x films on unbuffered and CeO2-buffered yttria-stabilized zirconia substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4753-4760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x (YBCO) films deposited by pulsed laser ablation on unbuffered and CeO2-buffered yttria-stabilized zirconia (YSZ) substrates were studied by x-ray diffraction and transmission electron microscopy to investigate film orientation. From φ scans it was determined that the unbuffered films possess two major in-plane orientation relationships with the substrate. Both have (001)YBCO(parallel)(001)YSZ, with either [100]YBCO(parallel)[100]YSZ or [110]YBCO(parallel)[100]YSZ, a 0° or 45° orientation, respectively. As deposition temperature increases, satellite peaks that straddle the 0° or 45° orientations develop. The Σ boundary and near coincident site lattice descriptions are applied to the discussion of these misorientations. In general the CeO2-buffered YBCO films align with to the 45° orientation to the CeO2 buffer layer. Out-of-plane film orientation was investigated for both unbuffered and CeO2-buffered YBCO films and expressed as a ratio of the amount of c⊥ material to a⊥ material. Buffered films exhibited c⊥ material to a⊥ material ratios approximately twice those of unbuffered films. Transmission electron microscopy combined with the x-ray data was used to develop an explanation for the trends in the variation of the c⊥/a⊥ ratio with film deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357245
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  • 2
    Electronic Resource
    Electronic Resource
    Crystal growth and optical characterization of cerium-doped Lu1.8Y0.2SiO5 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7360-7362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Czochralski growth of cerium-doped Lu1.8Y0.2SiO5 (LYSO) from a 90/10 solution of Lu2SiO5 (LSO) and Y2SiO5 (YSO) is demonstrated. The alloyed scintillator retains the favorable growth properties of YSO and the desirable physical and optical scintillator properties of LSO. Radioluminescence, thermally stimulated luminescence, optical absorption, and lifetime measurements confirm the equivalence of LYSO and LSO optical properties. Advantages of LYSO Czochralski growth relative to LSO include reduced melting point, less propensity for formation of crystalline inclusions, lower cost of starting material, and easier incorporation of cerium into the host lattice. This material offers an attractive alternative to LSO for scintillator applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328775
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  • 3
    Electronic Resource
    Electronic Resource
    Intrinsic trapping sites in rare-earth and yttrium oxyorthosilicates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5308-5310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Similarity among the thermally stimulated luminescence glow curves of undoped Lu2SiO5 and Ce3+-doped oxyorthosilicates possessing the monoclinic C2/c structure strongly suggests the luminescence traps are intrinsic in origin. They are most likely associated with the configuration of oxygen ions in the vicinity of not only the Ce3+ ion, as suggested in previous work, but also the host lanthanide ion. The optical absorption spectrum of pristine Lu2SiO5 shows the presence of intrinsic absorption centers that are enhanced upon x irradiation as seen in other oxides containing oxygen related point defects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371518
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  • 4
    Electronic Resource
    Electronic Resource
    Correlation of surface topography and flux pinning in superconducting YBaCuO films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5099-5102 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface topography of YBa2Cu3O7 thin films prepared by pulsed laser deposition is studied by atomic force microscopy and scanning tunneling microscopy. The possible contributions from observed structural features to the critical current density Jc are discussed. It is shown that the contribution of the screw dislocations associated with some structures can be either repulsive or attractive, depending on the dominant pinning mechanism. At low magnetic fields (to about 0.25 kOe) these dislocations can account for the observed critical current density values (Jc(approximately-greater-than)1011 A/m2) while for larger fields the higher-density steplike growth structures can account for significant values of Jc. It is shown that the pinning strength associated with pinning at steps varies inversely with thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350612
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of YBa2Cu3O7−x thin films on Si with a CoSi2 buffer layer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 419-421 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using the pulsed laser deposition technique, high-temperature superconducting YBa2Cu3O7−x (YBCO) films were grown on Si(001) with a 36 nm single-crystal 〈001〉 oriented CoSi2 buffer layer. The films, grown at a substrate temperature of ∼700 °C, have a metallic resistive temperature dependence with zero resistance at 85 K. X-ray diffraction, scanning electron microscopy, and ion channeling studies show that the YBCO films are polycrystalline but are strongly c-axis oriented normal to the Si substrate. Diffusion at the interface between the YBCO film and silicide buffer layer was minimized. This is essential to the growth of high-temperature superconducting films on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104655
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial yttria-stabilized zirconia on (11¯02)sapphire for YBa2Cu3O7−δ thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 304-306 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (11¯02) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the a axis normal to the substrate surface. Ion beam (2.8 MeV He++) channeling measurements show that the YSZ films are highly crystalline with a channeling minimum yield of 8%. The epitaxial relationship between the film and substrate is further confirmed by a cross-section transmission electron microscopy study. Epitaxial YBa2Cu3O7−δ thin films deposited on YSZ/sapphire have Tc and Jc of up to 89 K and 1×106 A/cm2 at 77 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104669
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  • 7
    Electronic Resource
    Electronic Resource
    Compositional effects on plasma-enhanced metalorganic chemical vapor deposition of YBa2Cu3O7−x thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2839-2841 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YBa2Cu3O7−x superconducting thin films with a zero resistance transition temperatures of about 90 K have been prepared, in situ, on LaAlO3 by a plasma-enhanced metalorganic chemical vapor deposition process at a substrate temperature of 670 °C in 1 Torr partial pressure of N2O. The composition of the films was varied systematically to investigate the effect of changes in the Ba/Y and Cu/Y ratio on the film properties. The results indicated that superconducting current densities exceeding 106 A/cm2, measured at 77 K by a transport method, could be obtained on films with an anomalously wide range of film compositions. Excess Cu (up to 60%) and deficiency in Ba (down to 30%) from their stoichiometric values did not significantly degrade the superconducting properties of the films. As the composition approached the Y-Ba-Cu ratio of 1-2-3, an improvement in surface morphology and a decrease in superconducting transition temperature were found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104752
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  • 8
    Electronic Resource
    Electronic Resource
    Dependence of crystalline orientation on film thickness in laser-ablated YBa2Cu3O7−δ on LaAlO3 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 871-873 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of YBa2Cu3O7−δ thin films deposited on (001)LaAlO3 substrates by a laser ablation process has been investigated by scanning electron microscopy, x-ray diffraction, and cross-sectional transmission electron microscopy. Adjacent to the substrate, the film is entirely oriented with the c-axis perpendicular to the surface. At a thickness of about 0.4 μm, the occurrence of 90° boundaries brings about a transition to grains with their c-axes parallel to the surface (aligned along the [100] and [010] directions of the pseudocubic LaAlO3 substrate). This transition is discussed in terms of the crystal growth anisotropy and the retained strain that may precipitate the transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104491
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  • 9
    Electronic Resource
    Electronic Resource
    Properties of YBa2Cu3O7−δ films upon low fluence laser irradiation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7161-7163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical responses and crystallinity of YBa2Cu3O7−δ films were measured as a function of excimer laser exposure (308 nm) and laser fluences ranging from 20 to 150 mJ/cm2. Tc and Jc were measured with an inductive technique and with standard dc transport measurements. The crystallinity of the films, as determined by Rutherford backscattering spectrometry, scanning electron microscopy, and x-ray diffraction, was altered by the formation of a degraded surface layer, even at fluences well below the melting threshold. The critical current of a film can be modified with a high degree of accuracy and can be correlated with a boundary layer in the film. This allows for the critical current to be decreased over three orders of magnitude with a resolution of 255 A/cm2 per laser shot.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349778
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  • 10
    Electronic Resource
    Electronic Resource
    A versatile substrate heater for use in highly oxidizing atmospheres (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 437-440 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report the design, construction and performance of a versatile substrate heater that meets the severe design constraints of heating substrates to high temperatures (≤900 °C) in relatively high pressures (hundreds of Torr) of oxidizing gases. The heater has been used to heat substrates by both thermal conduction via a conductive high temperature cement and by direct radiation. In particular, the production of high-quality YBa2Cu3O7−δ thin films grown on radiatively heated LaAlO3 substrates is demonstrated using the pulsed laser deposition (PLD) technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142139
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