Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7793-7797 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent optical absorption of cerium-doped gadolinium oxyorthosilicate (Gd2SiO5:Ce) has been measured and analyzed for impurity-ion-lattice coupling parameters and oscillator strengths. Although the spectrum consists of overlapping Ce3+ bands and Gd3+ lines, two well-resolved Ce3+ bands with 10 K maxima at 3.32 eV (peak a) and 3.61 eV (peak b) are amenable to spectral analysis. These bands, previously assigned to Ce3+ ions occupying crystallographically inequivalent substitutional sites, are characterized by Gaussian line shapes and temperature-dependent half widths that are well described by the linear model of impurity-ion-lattice coupling. Huang–Rhys [Proc. R. Soc. A 204, 404 (1950)] parameters of peaks a and b are 22.7 and 5.7, respectively, indicating strong ion-lattice coupling, with vibrational frequencies 1.83×1013 s−1 (peak a) and 5.07×1013 s−1 (peak b). Peak b centroid is approximately temperature independent, but peak a centroid shifts to higher energy with increasing temperature. This dependence is adequately described by including higher-order coupling terms in the ion-lattice interaction, although crystal-field contributions cannot be excluded. Absorption band oscillator strengths, f, are calculated from Smakula's [Z. Phys. 59, 603 (1930)] formula and knowledge of cerium concentration for the two inequivalent sites. In the interval 10–300 K, peak a f values range from (9.8 to 26.8)×10−4 and peak b f values vary from (7.8 to 5.8)×10−3. From the known correlation between oscillator strength and metal-ion-ligand separation, we identify peaks a and b as the seven- and nine-oxygen-coordinated sites, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7360-7362 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Czochralski growth of cerium-doped Lu1.8Y0.2SiO5 (LYSO) from a 90/10 solution of Lu2SiO5 (LSO) and Y2SiO5 (YSO) is demonstrated. The alloyed scintillator retains the favorable growth properties of YSO and the desirable physical and optical scintillator properties of LSO. Radioluminescence, thermally stimulated luminescence, optical absorption, and lifetime measurements confirm the equivalence of LYSO and LSO optical properties. Advantages of LYSO Czochralski growth relative to LSO include reduced melting point, less propensity for formation of crystalline inclusions, lower cost of starting material, and easier incorporation of cerium into the host lattice. This material offers an attractive alternative to LSO for scintillator applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5308-5310 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Similarity among the thermally stimulated luminescence glow curves of undoped Lu2SiO5 and Ce3+-doped oxyorthosilicates possessing the monoclinic C2/c structure strongly suggests the luminescence traps are intrinsic in origin. They are most likely associated with the configuration of oxygen ions in the vicinity of not only the Ce3+ ion, as suggested in previous work, but also the host lanthanide ion. The optical absorption spectrum of pristine Lu2SiO5 shows the presence of intrinsic absorption centers that are enhanced upon x irradiation as seen in other oxides containing oxygen related point defects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 695-697 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically studied the temperature- and magnetic field-dependent resistance in (La0.5Sr0.5)CoO3 (LSCO) films with various degrees of in-plane texturing using the biaxially oriented LSCO on CeO2/YSZ/SiO2/Si substrates. We find that the ferromagnetic transition temperature, Tc, is much the same in all samples while the resistive transition exhibits metallic behavior (dR/dT〉0) in the epitaxial LSCO to semiconducting behavior (dR/dT〈0) in the poorly textured LSCO. The magnetoresistance (MR) in the epitaxial LSCO on a LaAlO3 substrate displays two distinct regions; the low field hysteretic MR related to the magnetization hysteresis and the high field linear negative MR due to the suppression of spin fluctuations. In contrast, the MR in the biaxially textured LSCO sample shows only the hysteretic behaviors at low fields and no linear MR at high fields. Compared to the polycrystalline-doped LaMnO3 which shows an enhanced MR at low fields, the MR in the biaxially oriented LSCO does not exhibit such characteristics. We attribute this to the differences in the spin polarization between LSCO and the doped LaMnO3. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1763-1765 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting YBa2Cu3O7−x (YBCO) thin films with a surface resistance of 0.86 mΩ at 10 GHz and 76 K have been grown on polycrystalline ferrite yttrium iron garnet (YIG) substrates. The chemical and structural mismatches between YBCO and YIG are solved by using a double buffer layer of biaxially oriented yttria-stabilized zirconia (YSZ) and CeO2, where YSZ is deposited by an ion-beam-assisted-deposition technique. The YBCO films are c axis oriented with an in-plane mosaic spread [full width at half maximum of an x-ray φ-scan on (103) reflection] of less than 8°. The films have a superconductive transition temperature above 88 K with a transition width less than 0.3 K, giving a critical current density above 106 A/cm2 in self field at 75 K. At 75 K in an external magnetic field of 1 T perpendicular to the film surface, the films maintain a critical current density over 2×105 A/cm2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...