Electronic Resource
Tiwari, P.
;
Wu, X. D.
;
Foltyn, S. R.
;
[et al.]
Jia, Q. X.
;
Campbell, I. H.
;
Arendt, P. A.
;
Muenchausen, R. E.
;
Peterson, D. E.
;
Mitchell, T. E.
;
Narayan, J.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2693-2695
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112608
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