Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 2316-2320
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Alloys of Ga1−xAlxAs were implanted with As and Be ions at room temperature, and the implant damage was studied as a function of the depth from the surface by Raman scattering. The arsenic implant led to the amorphization of the AlAs and GaAs constituents of the mixed crystal. The Be implant, on the other hand, amorphized the AlAs constituent only while damaging the GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337141
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