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  • 1
    Electronic Resource
    Electronic Resource
    Lubrication of silicon micromechanisms by chemical grafting of long-chain molecules
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 44 (1994), S. 77-81 
    Details
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0924-4247(94)00777-2
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  • 2
    Electronic Resource
    Electronic Resource
    Nitrogen evolution study after wear in an implanted 42 CD 4 steel
    Amsterdam : Elsevier
    Applications of Surface Science 20 (1985), S. 205-214 
    Details
    ISSN: 0378-5963
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0378-5963(85)90081-9
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  • 3
    Electronic Resource
    Electronic Resource
    Migration of nitrogen implanted into iron induced by the presence of a buried carbon-rich layer (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5132-5135 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A redistribution of nitrogen atoms towards a buried carbon-rich layer is observed for thin iron films implanted at 250 °C. The effect is attributed to the formation of ε-Fe3−x(C,N) iron carbonitride. Above 300 °C the ε-carbonitride phase becomes unstable and consequently the redistribution effect vanishes leading to well-separated profiles of nitrogen and carbon atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357226
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic properties of nanostructured thin films of transition metal obtained by low energy cluster beam deposition : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6676-6678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Clusters of iron, cobalt, and nickel are produced in a laser vaporization source. The size distributions of the incident clusters are checked by time-of-flight mass spectrometry before deposition at low energy. Studying the near threshold photoionization, Con and Nin clusters exhibit an icosahedral structure while for iron, no clear structure emerges. Neutral clusters were deposited on different substrates at room temperature with thicknesses up to 100 nm in view to determine their structure and magnetic properties. A limited coalescence of the clusters is observed from high-resolution transmission electron microscopy. No icosahedron has been observed but cuboctahedron and interface twins between adjacent particles have been clearly identified in Ni films. Grazing incidence x-ray diffraction experiments reveal a classical phase with grain size around 6 and 4 nm for Fe and Ni films, respectively but an anomalous fcc phase for Co films and a very low grain size of 2 nm. The density of films determined by x-ray reflectivity was estimated to represent only 60%–65% of the bulk density. Magnetic behaviors studied by ferromagnetic resonance and SQUID magnetization measurements have been interpreted using the correlated spin glass model. Mössbauer spectra performed on Fe films at zero field revealed the presence of 20% of iron in the form of thin nonmagnetic oxide skin surrounding Fe grains which allow to find 2.2 μB per magnetic iron atom in agreement with macroscopic magnetic measurements. Nevertheless we found an anomalous reduced atomic moment for Ni film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358165
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of ion irradiation on the residual stresses in Cr thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 891-893 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cr films sputtered onto {100} Si substrates at room temperature were found to be under residual tension, as revealed by wafer curvature measurements. A 150 nm thick Cr film was bombarded with 300 keV Ar ions after deposition. The intrinsic residual tensile stress increased slightly and then decreased with further increase in the ion dose. For ion doses 〉1×1015 ions/cm2, the stress in the film became compressive and increased with increasing dose. Transmission electron microscopy revealed that the grain boundaries in as-deposited Cr have columnar porosity. A Cr film, ion irradiated to a dose of 5×1015 ions/cm2, showed no grain boundary porosity. The changes in the residual stress during ion irradiation are explained by considering Ar incorporation in the film and the manner in which irradiation may change the interatomic distances and forces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122029
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  • 6
    Electronic Resource
    Electronic Resource
    Stress-related interdiffusion in dc sputtered TiN/B–C–N multilayers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion in TiN/B–C–N multilayers during vacuum annealing at temperatures up to 1000 °C and/or 300 keV argon irradiation is studied. Changes in composition, stress field, bilayer repeat length, and interface quality are reported. The effect of stress on diffusion is proved by performing the same annealing or the same irradiation on a multilayer with and without compressive stress. During thermal annealing, demixing or phase separation is observed. On the contrary, during irradiation, mixing occurs. Both phenomena are enhanced in the presence of the stress field. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122089
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal and ion irradiation stability of direct current sputtered TiN/B–C–N multilayers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1098-1100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The response of TiN/B–C–N multilayers to vacuum annealing at 900 °C and to 300 keV argon irradiation is studied. Changes in composition, stress field, bilayer repeat length, and layered structure are reported. The modifications observed during thermal annealing are mainly related to the departure of nitrogen because of the initial high state of compressive stress. During irradiation, the viscous flow of atoms perpendicular to the stress field causes an increase of the bilayer repeat length and interdiffusion between each layer. This mechanism leads to relaxation of stress and to the disappearance of the layered structure for higher dose. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118496
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  • 8
    Electronic Resource
    Electronic Resource
    Structural modifications of alumina implanted with zirconium, copper, and titanium ions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3740-3746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructural modifications (amorphization, lattice deformation, phase transformations) in alumina induced by implantation of zirconium, copper, or titanium ions and by postimplantation thermal annealings were studied using grazing incidence x-ray diffraction. It was shown that the amount of lattice deformation and the type of damage resulting in the lattice depend on the ion implanted. When zirconium was implanted, the alumina lattice was highly deformed. Amorphization was observed when a high ion dose was implanted. Copper implantation led to the formation of gamma alumina. With titanium ions, very high strain was created and delta alumina was formed. After postimplantation annealings, lattices returned to their equilibrium state through crystallization of alpha alumina and precipitation of oxides of the implanted species (ZrO2, CuO and CuAl2O4, and TiO2). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365736
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  • 9
    Electronic Resource
    Electronic Resource
    Stress in dc sputtered TiN/B–C–N multilayers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6703-6708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress in crystalline TiN/amorphous B–C–N multilayered thin films has been determined by the substrate curvature technique. It is established that the total stress is dependent on the number of deposited bilayers and on the bilayer repeat length. The linear relationship between the stress and the inverse of the bilayer repeat length allows calculation of the value of the interface stress. It is found to be compressive with a value between 1.79 and 2.46 J/m2, depending on the calculation method. An apparent dependence between the interface stress and the total thickness of the multilayer film is observed. It is interpreted as an additional relaxation due to an increase of the roughness of the interfaces when the number of deposited bilayers is increased. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365211
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  • 10
    Electronic Resource
    Electronic Resource
    Thermodynamic guidance for implantation treatments to improve coating–substrate adhesion (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3191-3193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel "seeding'' method is disclosed, in which ion implanted Al atoms promote bonding between SiC and a subsequently deposited Al2O3 coating. Al+ ions were implanted in SiC substrates near room temperature to a fluence of 4×1017 Al/cm2 at an energy of 110 keV. The substrates were coated with 100–200 nm of aluminum oxide and then heated in air (i.e., oxidized) for 4 hours at temperatures from 500 to 1000 °C. Scratch tests demonstrated that coatings spalled from nonimplanted substrates but not from Al+-implanted substrates. Auger sputter depth profiles of substrates oxidized at 850 °C showed that Al diffused out of the implanted layer and an Al-Si-O layer formed at the coating-substrate interface. Cross-section and plan TEM of a substrate oxidized at 1000 °C identified the interface phase as mullite and found fine-grained SiC and mullite (Al6Si2O13) in the implanted layer. The composition and phase changes were explained in terms of the thermochemical reactions expected of the Al-Al2O3-SiC-O2 system. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112477
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