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  • 1
    Electronic Resource
    Electronic Resource
    Deep levels in uniformly Si doped GaAs/AlxGa1−xAs quantum wells and superlattices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2860-2865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniformly Si doped GaAs/Al0.33Ga0.67As multilayer structures have been studied by deep level transient spectroscopy (DLTS) and photocapacitance measurements. DLTS spectra showed five peaks which are related to defects in the GaAs layers. The concentration of these defects decreased with increasing layer thickness. An additional peak, which has been observed with forward bias filling pulses, is suggested to be related to defects near the surface, most probably due to defect accumulation in multilayers. Their emission and capture properties as well as photoionization cross sections have been studied. Evidence is provided that the emission and filling processes of these deep levels are modified due to the energy quantization in the conduction band and the carrier transport through the quantum structures. No DX center related DLTS peaks or other features like persistent photoconductivity effects have been observed in any of our samples. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363137
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of optical properties of the deep sulfur center in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5312-5317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectral distributions of the hole photoionization cross section of the deep sulfur center in silicon have been measured at 10 different temperatures within the range 75 K≤T≤297 K applying the steady-state photocurrent technique. Zero-phonon hole binding energies of the deep donor level have been determined at these temperatures by using a detailed numerical fitting procedure. The temperature dependence of the hole binding energy is well described by a novel analytical formula with a zero-temperature binding energy of 557 meV. Further analysis of our data resulted in a lattice adjustment energy (Franck–Condon shift) of 51 meV and an associated average phonon energy of 33 meV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363469
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  • 3
    Electronic Resource
    Electronic Resource
    Photoexcited states of DX centers in Si doped AlxGa1−xAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3493-3503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) and single shot capacitance techniques were used to investigate Si doped AlxGa1−xAs with Al compositions ranging from 0.30 to 0.59. Under illumination, an additional DLTS peak was observed in samples with Al compositions close to x=0.38. This peak has been shown to originate from a localized state with an energy level shallower than the DX ground state and energy barriers for both electron emission and capture processes. Persistent photoconductivity effects related to this state were observed below 50 K. Evidence is provided that this state is a metastable state of the Si donor. Its origin is discussed in terms of the intermediate state of a negative U DX center and a metastable negative U configuration of the Si donor. A further photoinduced DLTS peak was observed within a narrow Al composition range that has been identified as the shallowest DX level of the four distinct DX levels originating from different local environments of the donors. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363637
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  • 4
    Electronic Resource
    Electronic Resource
    Deep acceptorlike states in Si doped molecular-beam-epitaxial-grown AlxGa1−xAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 859-863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Acceptorlike states with energy levels in the lower part of the band gap have been observed by photocapacitance measurements in Si-doped molecular-beam-epitaxial-grown AlxGa1−xAs (x=0.30–0.59). The microscopic structure of these defects is still unclear. Their concentration, however, can exceed the net donor concentration. The energy positions of the acceptorlike states as well as their photoionization cross sections of holes and electrons have been studied for different x. Due to their large concentration, these states may disturb experiments performed on DX centers which are often assumed to be the main electronic levels in these materials. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363554
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  • 5
    Electronic Resource
    Electronic Resource
    Metastable states of Si donors in AlxGa1−xAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4395-4399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Donor related states in Si-doped AlGaAs with Al compositions ranging from 0.30 to 0.59 were investigated by capacitance measurements. In addition to the stable Si-DX state, two metastable states of the silicon donor were observed. Of the two metastable states, the shallower one is attributed to the X-conduction band related effective mass state arising from substitutional silicon on the group III site. The deeper one is proposed to be related to a donor configuration different from both the substitutional configuration and that of the DX state. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363399
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of relaxation processes in strained Si1−xGex/Si epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 446-450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation behavior of Si1−xGex/Si(001) strained layers has been studied during annealing in the temperature range 400–900 °C. Taking into account that the relaxation is mainly caused by nucleation and propagation of dislocations, the dislocation related luminescence has been used to characterize the relaxation process. It is shown that in highly stressed layers dislocations with nonequilibrium dissociation width are generated. Our data are in good agreement with previous transmission electron microscopy results. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360625
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of ruthenium-related defects in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2495-2500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of defects due to ion implantation of ruthenium in silicon have been studied by means of junction space-charge techniques. Two energy levels were observed with energy positions at Ec−0.184 eV (A-level) and EV+0.265 eV (B-level), respectively, at 77 K. The changes in enthalpy due to the capture of electrons and holes were −8 meV (A-level) and 1 meV (B-level). Gibb's free energies at different temperatures were calculated for both levels. Good agreement with the corresponding optical threshold energy was found for the B-level suggesting a small Frank–Condon shift. A tentative model for the origin of the observed defects is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358778
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  • 8
    Electronic Resource
    Electronic Resource
    Optical studies on the electric field dependence of excited donor states in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4524-4529 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strong electric fields on some excited states of the substitutional selenium donor in silicon has been investigated with the aid of a new method for determining Fourier transform photoresponse spectra of impurity centers in the depletion regions of diodes. The response concerned is the current in the external circuit of the diode arising from centers in a certain zone, this zone being controlled by trap-filling pulses applied to the diode in synchronism with the movement of the spectrometer's scanning mirror. The measurements show that the 1s1T2 and 2p0 states of the selenium donor are subject to quadratic Stark shifts of 2.1×10−16 and 3.0×10−15 eV m2 V−2, respectively. Further, thermal emission from these states to the conduction band is found to be enhanced by the field. Finally, it is found that at high fields transitions from the ground state of this neutral double donor to the spin-triplet component 1s3T2 may occur, a fact which has not been directly observed previously.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341144
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  • 9
    Electronic Resource
    Electronic Resource
    Persistent decrease of dark conductivity due to illumination in AlGaAs/GaAs modulation-doped heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5596-5601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a persistent decrease of the dark conductivity in AlGaAs/GaAs heterostructures due to illumination. The decrease was observed for photon energies between 0.7 and 1.15 eV and larger than 1.4 eV in the temperature range 170〈T〈300 K. Using proper bias conditions the dark conductivity after illumination can be 20% smaller than the dark conductivity in thermal equilibrium. The studies have been performed on samples with different doping species and compositions. A possible model for the observed behavior is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355285
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  • 10
    Electronic Resource
    Electronic Resource
    The iodine donor in ZnSxSe1−x alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6322-6327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy position of an iodine-related donor has been tracked through the alloyed system ZnSx Se1−x, where 0.60〈x〈1.00. Both optical and thermal energies have been measured with junction space-charge techniques. The results suggest that the optical threshold energies and lattice-relaxation effects are almost independent of x, although the activation energy of the thermal emission rate increases considerably with increasing x. Detailed measurements of the temperature dependence of the capture cross section for electrons show that the enthalpy of the iodine-related center is fairly constant for higher values of x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342093
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