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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen effect on the optical activity of dislocations in silicon introduced at room temperature (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7882-7888 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations were introduced into silicon crystals by mechanical scratching at room temperature. The optical property of such dislocations was investigated by means of cathodoluminescence. Neither deformation-induced luminescence nor the exciton luminescence was detected in the scratched region, showing that a high density of nonradiative recombination centers is induced on or around dislocations. Hydrogen plasma treatment of a scratched crystal led to the appearance of the so-called D1–D4 luminescence lines along the scratch. Deep-level transient spectroscopy revealed that deep traps were induced by scratching and diminished drastically due to subsequent hydrogen plasma treatment. Thus, it was concluded that hydrogen passivated nonradiative recombination centers but not the luminescence centers. The characteristics in spatial distribution of D1 and D2 lines and those of D3 and D4 lines showed that these two groups of luminescence lines were of different origins. Since the specimens used were thought to be free from metal contamination, the luminescence was not related to metallic impurities incorporated in the dislocation core. The nonradiative recombination centers induced by scratching were annihilated due to annealing at temperatures higher than 500 °C. The release of hydrogen from the nonradiative centers in a hydrogenated specimen did not take place before they were annihilated by annealing. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357898
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of relaxation processes in strained Si1−xGex/Si epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 446-450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relaxation behavior of Si1−xGex/Si(001) strained layers has been studied during annealing in the temperature range 400–900 °C. Taking into account that the relaxation is mainly caused by nucleation and propagation of dislocations, the dislocation related luminescence has been used to characterize the relaxation process. It is shown that in highly stressed layers dislocations with nonequilibrium dissociation width are generated. Our data are in good agreement with previous transmission electron microscopy results. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360625
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic properties of C60 single crystals doped with lithium by electrodiffusion (1999)
    Springer
    Journal of experimental and theoretical physics 89 (1999), S. 923-932 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Diffusion of lithium cations in C60 single crystals driven by electric field has been detected and studied. A novel technique for fullerene crystal doping based on injection of ions through a “superionic crystal/C60 single crystal” heterojunction has been suggested. It has been found that lithium doping of C60 single crystals brings about an ESR signal, and this signal as a function of time has been investigated. The electronic conductivity in LixC60 crystals has a nonmetallic nature. Reflection spectra measured in the IR band have shown that the reflectivity due to free electrons gradually decreases with time, which correlates with the evolution of signals due to ESR and microwave conductivity. Lithium doping of crystals increases the oscillator strength of the T 1u (4) vibrational mode and shifts it to lower frequencies (from 1429 cm−1 to 1413 cm−1), which indicates that one electron is present at the C60 molecule, and this fact may be treated as evidence that the LiC60 phase is generated in a C60 crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558933
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  • 4
    Electronic Resource
    Electronic Resource
    Long-lived excited states and photoluminescence excitation spectra in single crystals of fullerene C60 (1998)
    Springer
    Journal of experimental and theoretical physics 86 (1998), S. 405-411 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Photoluminescence, optical absorption spectra, and photoluminescence excitation spectra were measured on large (2–3 mm), very pure crystals of fullerene C60 at 5 K. It is shown that the main contribution to the photoluminescence of these crystals is from singlet and triplet excitons captured on crystal defects. The concentration of these defects does not exceed 1018 cm−23, and the lifetime of triplet excitons on these defects is about 3 ms. It is shown that the symmetry distortion of the C60 molecules at the defects is rather large and causes the oscillator strength of the zero-phonon optical transitions to be comparable to the most intense optical transitions with the participation of intramolecular vibrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558443
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  • 5
    Electronic Resource
    Electronic Resource
    Features of the optical absorption of crystals of the fullerene C60 in the region of the orientational phase transition (1998)
    Springer
    Journal of experimental and theoretical physics 87 (1998), S. 1205-1213 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The absorption coefficient of perfect single crystals of the fullerene C60 is measured in the energy range 1.6–2.1 eV at temperatures from 4.2 to 300 K. An absorption fine structure is discovered in the and is assigned to electronic and vibronic transitions with the production of free excitons and excitons localized on structural defects. It is shown that in the region of the structural phase transition from a face-centered cubic structure to a simple cubic structure the absorption coefficient undergoes a jump, which is associated with an energy shift of the free exciton line toward lower energies. It is discovered that spatial inhomogeneity, which is associated with the growth of the new phase from a finite number of nuclei, appears in the crystal at the time of this transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558614
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  • 6
    Electronic Resource
    Electronic Resource
    Raman scattering of light and IR absorption in carbon nanotubes (1998)
    Springer
    Journal of experimental and theoretical physics 86 (1998), S. 1030-1034 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Raman light scattering and IR absorption spectra of samples containing multilayer carbon nanotubes in different stages of purification by the selective oxidation technique have been investigated. It was found that the Raman spectra of carbon nanotubes exhibit softening of the mode at 1582 cm−1 corresponding to E 2g vibrations of graphite hexagons and a line at 120 cm−1 due to the radial vibrations of nanotubes. In IR absorption spectra measured in the region of 0.07–0.3 eV, several sets of lines with a spacing of 15 meV (120 cm−1) between lines of each group have been detected. We suggest that each group corresponds to electron transitions generating electron-hole pairs in semiconducting nanotubes and contains a phononless 00-line and its phonon replicas with spacing between them equal to the “breathing” mode energy of 120 cm−1. Measurements of electric conductivity at a frequency of 9300 MHz indicate that, in addition to semiconducting nanotubes, the samples contain nanotubes with properties of a highly disordered semimetal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558550
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  • 7
    Electronic Resource
    Electronic Resource
    Optical Characteristics of C60 Single Crystals Grown in Microgravity Conditions (2000)
    Springer
    Journal of low temperature physics 119 (2000), S. 223-232 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract This work is devoted to the growing and characterization of perfect C 60 single crystals with the aim of further understanding of the physical properties of this material related to the low energy excited states which determine in a considerable degree its electronic properties, which, in turn, are important for its possible application. Here we present several characterization techniques based on optical properties of C 60 crystals and the first results of the investigation of the C 60 samples grown at the orbital space station “MIR”.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004684812364
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