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  • 1
    Electronic Resource
    Electronic Resource
    Effect of arsenic segregation on the electrical properties of grain boundaries in polycrystalline silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 438-442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Equilibrium arsenic segregation to the grain boundaries of polycrystalline silicon was measured directly by x-ray microanalysis in the temperature range 700–1000 °C. A direct link was observed between arsenic segregation and resistivity. Increasing arsenic segregation at the lower annealing temperatures is consistent with an observed increase in resistivity. Fitting the enhancement levels at various temperatures with the McLean segregation isotherm, a binding energy of 0.65 eV/atom and a boundary saturation limit of 12 at. % for arsenic was obtained. A model for the effect of the segregation of arsenic to silicon grain boundaries is proposed. Segregation to boundary defects that cause trapping states can remove these interfacial traps, and segregation to other boundary sites can create a degenerately-doped interfacial layer. The electrical consequences of this segregation are considered, and by comparison of the measured resistivity changes with temperatures with those predicted from these simple models it is proposed that the major contribution to the resistivity in heavily-doped polycrystalline silicon comes from scattering of carriers by the high density of positive charge at the grain boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334770
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  • 2
    Electronic Resource
    Electronic Resource
    Atom probe studies of the composition of low-temperature oxides on (100) silicon and gallium arsenide surfaces (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5089-5095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser atom probe microanalysis has been used to investigate the stoichiometry of low-temperature oxides on silicon and gallium arsenide. The composition of hydrophobic oxides grown on silicon after cleaning in hydrofluoric acid solutions is shown to tend to SiO as the oxide layer thickens. By contrast, hydrophilic oxides grown by low-temperature chemical treatments have a layered structure, SiO2 /SiO/Si. Low-temperature air-grown and chemical oxides on GaAs have a composition (GaAs)2O3 , and are covered by a layer of adsorbed water. This same composition is also approached by thermal oxides grown between 300 and 400 °C in a low partial pressure of oxygen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343185
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  • 3
    Electronic Resource
    Electronic Resource
    Compositional homogeneity of metalorganic chemical vapor deposition grown III-V compound semiconductor epilayers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 250-256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compositional homogeneity of epitaxially grown layers of GaInAs, AlInAs, and GaAlInAs on InP substrates has been investigated using pulsed laser atom probe techniques. All the material characterized was shown by transmission electron microscopy to have a fine-scale contrast variation, however only some of the samples were found, using atom probe techniques, to show distinct deviations from compositional uniformity. The average composition measured from each of the layers was that of the lattice-matched composition intended during growth, however the composition varied locally, on a scale of typically 10–20 nm, from the mean composition by up to 5 at. %.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347759
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  • 4
    Electronic Resource
    Electronic Resource
    Arsenic segregation to silicon/silicon oxide interfaces (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1259-1262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic segregation at polycrystalline silicon/silicon and polycrystalline silicon/silicon oxide interfaces was examined directly by transmission electron microscopy (TEM) and scanning transmission electron microscopy(STEM). Segregation occurring precisely at these interfaces was identified. A simple model was proposed based on arsenic segregation to structural units containing dangling bonds and consequent bond saturation. The removal of these dangling bonds will then play an important role in the electrical properties of these interfaces. Furthermore substitutional arsenic segregation at a degenerate level at these interfaces was also proposed. The subsequent dopant ionization and localized charges at the interfaces was discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336118
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  • 5
    Electronic Resource
    Electronic Resource
    Application of position sensitive atom probe to the study of the microchemistry and morphology of quantum well interfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The morphology and microchemistry of interfaces in GaInAs/InP quantum well structures have been studied with extremely high resolution by the new technique of position sensitive atom probe microanalysis. This letter presents some preliminary results demonstrating the power of the technique in determining the structure and chemistry of individual interfaces in multilayer epitaxial semiconductor samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101328
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  • 6
    Electronic Resource
    Electronic Resource
    Atom probe analysis of a ceramic oxide superconductor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1020-1022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field-ion specimens have been produced from a bulk ceramic yttrium barium cuprate superconductor, allowing quantitative atom probe analysis from this new class of materials. This technique offers the potential for high-resolution quantitative analysis for oxygen concentrations in the near-surface regions and the study of microchemistry of contact/superconductor interfaces. Preliminary results are presented on bulk compositions and the surface modifications following vacuum annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99232
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  • 7
    Electronic Resource
    Electronic Resource
    Low-temperature processing of superconducting Tl2Ba2Ca1Cu2Ox films on CeO2 buffered sapphire (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tl2Ba2Ca1Cu2Ox thin films with excellent alignment have been grown on CeO2 buffered R-plane sapphire using an ex situ anneal step in argon atmospheres at temperatures of 720–740 °C. With this low-temperature process we have overcome the serious problem of reaction layers being formed at the CeO2/Tl2Ba2Ca1Cu2Ox interface, which can degrade film properties. The presence of a sharp CeO2/Tl2Ba2Ca1Cu2Ox interface has been confirmed by x-ray diffraction, transmission electron microscopy, and high resolution electron microscopy observations. Films have well connected morphologies, with critical temperature (Tc) values of up to 101.6 K and critical current density (Jc) values of up to 1.25×105 A cm−2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118093
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  • 8
    Electronic Resource
    Electronic Resource
    Buffer layer/film interactions in the growth of Tl2Ba2Ca1Cu2Ox films on CeO2 buffered sapphire (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 517-519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tl2Ba2Ca1Cu2Ox thin films have been grown on highly textured CeO2 layers deposited onto R-plane sapphire substrates. The Tl2Ba2Ca1Cu2Ox films have critical temperature (Tc) values around 95 K and current density (Jc) values up to 8×104 A/cm2. The films are c-axis oriented even though we have identified the formation of a polycrystalline BaCe(Tl)O3 layer by reaction between the buffer layer and the superconducting precursor during the thalliation process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114075
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  • 9
    Electronic Resource
    Electronic Resource
    Superconducting and microwave properties of spray pyrolized Tl2Ba2Ca2Cu3Ox films on 1 inch polycrystalline zirconia disks (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1542-1544 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The processing of spray pyrolyzed Tl2Ba2Ca2Cu3Ox films has been successfully scaled up to samples on 1 inch diameter, finely polished yttria-stabilized zirconia disks. Transport critical current density (JC) measurements on the films exhibited values of (approximately-greater-than)3×104 A/cm2 at 77 K. The surface resistance (RS) of such films has been measured using a TE011 mode end-wall-replacement cavity at 20 GHz and 77 K. RS values of 5.3 mΩ and 1.3 mΩ at 20 GHz and 10 GHz respectively were obtained. These results are the best recorded RS values to date for thick films of any superconductor at the same frequencies and at 77 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113640
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  • 10
    Electronic Resource
    Electronic Resource
    The Influence of Bi Doping on the In Situ Growth of TlBa2Ca2Cu3O9 High-T c Films (1998)
    Springer
    Journal of superconductivity 11 (1998), S. 603-607 
    Details
    ISSN: 1572-9605
    Keywords: TlBa2Ca2Cu3O9 ; films ; In Situ growth
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The in situ process—laser ablation in combination with thermal evaporation of Tl2O—has turned out to be a preparation method for single-phase and epitaxial TlBa2Ca2Cu3O9 (1223) thin films with T c values up to 109 K. It was found by several groups that a partial substitution of Tl by Bi simplifies the phase development of the 1223 compound in the usual two-step process. We have investigated the influence of the Bi doping on the in situ growth. X-ray measurements show that the films consisted mainly of the 1223 compound. In 300-nm thin films there was no evidence of a Bi amount in the crystal structure, but thinner films (80 nm) show a small amount of Bi. We concluded that Bi doping supports the phase development of the 1223 compound only in an early stage of the film growth. The Bi-doped films have higher T c values up to 114 K, higher j c values up to 6 × 105 A/cm2 (77 K, 0 T), and lower surface resistances of 56 mΩ (77 K, 87 GHz) than the undoped films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022639430125
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