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  • 1
    Electronic Resource
    Electronic Resource
    Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3004-3014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a novel semiconductor quantum well (QW) structure consisting of alternating (In,Ga)As and Ga(P,As,Sb) layers grown pseudomorphically on a GaAs substrate by all-solid-source molecular beam epitaxy. The band gap of the QW is determined by the thickness and composition of both types of layers and can be varied from 1.1 to 1.55 μm. Calculations show that the observed strong room-temperature photoluminescence in this wavelength range can be explained by a type-II transition in the QW. Structural investigations by reflection high-energy electron diffraction, transmission electron microscopy, and secondary ion mass spectroscopy confirm a triple layer structure with laterally modulated composition. Photoluminescence measurements reveal a linewidth of 50 meV at 1.3 μm and a luminescence decay time of 240 ps. Our investigations demonstrate the feasibility of this materials system for vertical cavity surface-emitting lasers and other optoelectronic devices on GaAs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287233
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of well coupling on the optical gain of multi-quantum-well lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4579-4585 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of coupling between quantum wells on the optical gain has been examined here. Although the results of the calculations mostly agree with previous qualitative expectations of gain suppression with coupling, there are some important exceptions. It is shown that the dependence of peak gain or threshold current density is not a monotonic function of the barrier thickness, and more importantly there are barrier thicknesses (beyond the almost opaque barrier case) for which optical gain can be enhanced and threshold current density reduced as compared to the values for an uncoupled structure. Results and discussion for the gain peak and threshold current density of a GaAs/Al0.3Ga0.7As double quantum well system are presented as a specific example
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352774
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  • 3
    Electronic Resource
    Electronic Resource
    Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1267-1269 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature photoluminescence at wavelengths between 1.2 and 1.5 μm has been observed in samples consisting of InGaAs/GaPAsSb quantum well structures grown on GaAs. The emission wavelength is varied primarily by changing the composition within the GaPAsSb layer. It is proposed that such long wavelength emission results from a spatially indirect interband transition in the type-II quantum wells where the electron and hole wave functions have large spatial overlap. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124663
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    Paper (German National Licenses)
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