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  • 1
    Electronic Resource
    Electronic Resource
    Electronic properties of n-i-n-i doping superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2921-2933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band structures of n-i-n-i doping superlattices are found using a self-consistent calculation based on the envelope function formalism. The modulation potentials, the charge density distributions, the dispersion relationships, and the occupation of the subbands in the n-i-n-i superlattices are computed and their dependence on temperature and the structural parameters of the superlattices are studied. It is found that the modulation potentials of n-i-n-i doping superlattices are weak, and quantum effects are, therefore, also weak. The density of states in n-i-n-i superlattices can be adjusted by varying the structural parameters of the superlattices. As a result, the n-i-n-i doping superlattices behave like uniformly doped semiconductors with an adjustable density of states. The density of states is found to be temperature dependent. Electron mobilities of the n-i-n-i doping superlattices are also computed. It is found that both impurity scattering processes that are observed in uniform lightly doped semiconductor and heavily doped semiconductor can coexist in the n-i-n-i doping superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353023
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of transmission in polytype interband tunneling heterostructures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4714-4726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, based on a two-band k⋅P theory formulation, the transmission properties of polytype interband tunneling heterostructures are analyzed. The expressions for the continuity equation and the conservation of particle in the two-band picture of the interband tunneling are rigorously derived. A general and explicit relation between the quasibound state and the transmission resonance is established. Close-form analytical expressions for the transmission coefficient and the resonant condition are also derived. Our analysis provides reasonable explanations to all available experimental results in the polytype interband tunnel heterostructures, and insight to the design of the interband tunnel devices. In particular, the double quantum well structure is examined in detail for achieving strong resonances and multiple negative differential resistances.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352078
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental demonstration of resonant interband tunnel diode with room temperature peak-to-valley current ratio over 100 (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1542-1544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a recent experiment on resonant interband tunneling (RIT) diodes and the measured room temperature peak-to-valley (P/V) current ratio of 104:1 which represents the highest P/V ratio ever reported in any tunneling device. The RIT diode studied in this work consists of an InGaAs/InAlAs double-quantum well system embedded in a pn junction structure grown on InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353231
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of well coupling on the optical gain of multi-quantum-well lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4579-4585 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of coupling between quantum wells on the optical gain has been examined here. Although the results of the calculations mostly agree with previous qualitative expectations of gain suppression with coupling, there are some important exceptions. It is shown that the dependence of peak gain or threshold current density is not a monotonic function of the barrier thickness, and more importantly there are barrier thicknesses (beyond the almost opaque barrier case) for which optical gain can be enhanced and threshold current density reduced as compared to the values for an uncoupled structure. Results and discussion for the gain peak and threshold current density of a GaAs/Al0.3Ga0.7As double quantum well system are presented as a specific example
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352774
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  • 5
    Electronic Resource
    Electronic Resource
    Differential gain in coupled quantum well lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2962-2969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we examine the effect of coupling between the wells on the differential gain. We find, as for the gain peak, the differential gain at the gain peak is not a monotonic function of the barrier thickness. For relatively thick barriers inclusion of coupling reduces the differential gain but as the barrier gets thinner the differential gain can be significantly enhanced or suppressed. We also compare our calculations with those for single quantum well to show how the enhancement in differential gain in the multi quantum well laser, due to reduced state filling and higher modal gain is affected by well coupling. Without losing generality, the model assumes the quantum well region to be electric field free. Numerical examples are presented for a GaAs/Al0.2Ga0.8As double quantum well system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360043
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  • 6
    Electronic Resource
    Electronic Resource
    Longitudinal carrier density profiling in semiconductor lasers via spectral analysis of side spontaneous emission (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1904-1906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combined experimental and theoretical approach to measuring the variation in carrier density along the length of a semiconductor laser is developed. It is shown that by following the rate of increase of the principal spectral peak, rather than monitoring the optical power at a fixed energy, measurements can be made less susceptible to the effects of heating in the sample. Experimental results showing the development of the longitudinal carrier density profile with injected current are presented and, when compared with the results of self-consistent modeling, provide insights into the internal operating mechanisms of the laser. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363005
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of electron velocity overshoot in AlxGa1−xAs/GaAs heterostructure insulated-gate field-effect transistors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 566-568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The factor γ=1+(RS+RD)/Rds is suggested to modify the expression of effective electron velocity in field-effect transistors (FETs), where RS and RD are the source and drain resistances, respectively, and Rds is the intrinsic drain-to-source resistance. Based on this modified expression ν'eff = 2πLfTγ, where L is the gate length and fT is the cut-off frequency, velocity overshoots were observed clearly at room temperature in AlxGa1−xAs/GaAs heterostructure insulated-gate FETs with both undoped and doped channels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103622
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  • 8
    Electronic Resource
    Electronic Resource
    Stepped-gate-oxide structure—A new approach for speed enhancement in the gate-controlled photodetector (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1335-1337 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report a stepped-gate-oxide structure implemented in the gate-controlled photodetector. The experimental results show that a one-order-of-magnitude enhancement in the response speed can be achieved by the use of such a structure owing to the induced transverse electrical field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100708
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of capacitive modulation of bipolar current in crystalline silicon gated p-i-n structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1875-1877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report, for the first time, the experimental observation of capacitive modulation of bipolar current in crystalline silicon devices consisting of a lateral p-i-n channel and an insulated polycrystalline silicon gate. Modulation characteristics of devices with different channel lengths are compared.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101265
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  • 10
    Electronic Resource
    Electronic Resource
    Double quantum well resonant tunnel diodes (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1260-1261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103503
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