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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of deep levels in n-type GaN by transient capacitance methods (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 304-309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient capacitance methods were used to analyze traps occurring in unintentionally doped n-type GaN grown by hydride vapor-phase epitaxy. Studies by deep-level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy indicated the presence of three majority-carrier traps occurring at discrete energies below the conduction band with activation energies (eV) ΔE1=0.264±0.01, ΔE2=0.580±0.017, and ΔE3=0.665±0.017. The single-crystal films of GaN were grown on GaN formed by metal-organic chemical-vapor deposition and on sputter-deposited ZnO; a similar deep-level structure was found in both types of samples. Pulse-width modulation tests using DLTS to determine the capture rates of the traps showed that the capture process is nonexponential, perhaps due to the high trap concentration. The origins of the deep levels are discussed in light of secondary-ion-mass-spectroscopy analysis and group theory results in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357144
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  • 2
    Electronic Resource
    Electronic Resource
    Deep levels in the upper band-gap region of lightly Mg-doped GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1362-1364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in undoped and weakly Mg-doped n-type GaN films fabricated by metalorganic chemical vapor deposition were examined with deep level transient spectroscopy. Deep levels measured at 0.26 and 0.62 eV below the conduction band were found in relatively low concentrations of ∼2×1013 cm−3 in undoped GaN. Addition of small quantities of the Mg acceptor species by means of bis-cyclopentadienyl magnesium (Cp2Mg) during growth corresponded to a significant increase in the concentration of the level at 0.62 eV. The concentration of the shallower level, found to be independent of the Cp2Mg addition, remained unchanged. These deep levels may detrimentally affect optical and electrical properties when fabricating p-type GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116080
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  • 3
    Electronic Resource
    Electronic Resource
    Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2676-2678 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Schottky barrier on unintentionally doped n-type GaN grown by hydride vapor phase epitaxy was obtained and characterized. Using vacuum evaporated gold as the Schottky barrier contact and aluminum for the ohmic contact, good quality diodes were obtained. The forward current ideality factor was n∼1.03 and the reverse bias leak current below 1×10−10 A at a reverse bias of −10 V. The barrier height φBn was determined to be 0.844 and 0.94 eV by current-voltage and capacitance measurements, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110417
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  • 4
    Electronic Resource
    Electronic Resource
    Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2507-2509 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction is used to study the stability of the (2×2) reconstruction on the (0001) surface of hexagonal-phase GaN as a function of growth parameters. The relationship between the critical conditions for existence of the reconstruction, which corresponds to a unique surface stoichiometry, is used to show the interdependency and scalability of growth parameters. A model is proposed to describe the stoichiometric balance of the species arriving on the surface at the critical conditions for observation of the reconstruction. Hall mobility of the GaN epitaxial layers was improved by growing under these conditions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117722
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of the dominant midgap levels in Si-doped GaN by optical-isothermal capacitance transient spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 524-526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical-isothermal capacitance transient spectroscopy (O-ICTS) was used to characterize prominent midgap carrier traps in Si-doped n-type GaN grown by metalorganic vapor phase epitaxy. Strong carrier photoionization was observed from two deep levels to the conduction band. The first level photoionizes in the broad range from below 1.8 eV to over 2.3 eV. Seen in all n-type GaN, this level is believed to be defect related and involved in the commonly observed yellow luminescence. The second, more dominant O-ICTS peak develops with incident photon energy of ∼2.3 eV. This is a previously unreported, yet unidentified level of impurity nature. The two midgap states can be clearly distinguished by means of the time constant for photoionization of carriers from the deep levels. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119598
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  • 6
    Electronic Resource
    Electronic Resource
    Arsenic mediated reconstructions on cubic (001) GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1025-1027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 4×1 (respectively 1×1) (001) GaN surfaces obtained when molecular-beam-epitaxy (MBE) growth is carried out on (001) cubic SiC were exposed to an As background pressure in the MBE chamber: The reconstructions rapidly and irreversibly changed to 2×2 [respectively c(2×2)] as usually observed for GaN growth on (001) GaAs. The usual reversible 2×2/c(2×2) transitions were consequently observed when bringing the Ga flux up or down. The respective positions for the 4×1/1×1 and 2×2/c(2×2) transitions were worked out as a function of the growth parameters. These observations indicate that the 2×2 and c(2×2) GaN surface reconstructions are mediated by As atoms which we tentatively assign to a surfactant effect. A simple structural model involving As dimers is proposed that accounts for Ga coverages of 0.5 and 1 monolayer for the 2×2 and c(2×2) growth regimes, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118433
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  • 7
    Electronic Resource
    Electronic Resource
    Optical characterization of the "E2" deep level in GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 543-545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correspondence between the E2 level (∼Ec−0.55 eV) in n-type GaN undergoing thermoionization and photoionization was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck–Condon parameter, dFC=0.30 eV at 90 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123180
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  • 8
    Electronic Resource
    Electronic Resource
    Origin of the nonradiative 〈112¯0〉 line defect in lateral epitaxy-grown GaN on SiC substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2547-2549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonradiative line defects are observed by cathodoluminescence in 〈2¯110〉 directions in [11¯00]-oriented GaN stripes grown by lateral epitaxy on SiC substrates. Using transmission electron microscopy, the origin is determined to be principally screw dislocations. We observe the screw dislocations in vertically [0001] stacked configurations and forming dislocation loops and half loops contained in two of the three planes of the form {11¯00}. The dislocations are believed to serve to relax the anisotropic stresses experienced in the lateral epitaxy-overgrown stripes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126404
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