ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have studied InGaN single-quantum-well (SQW) films using atomic force microscopy(AFM) and cathodoluminescence (CL) spectroscopy. It has been found that a screw dislocations(SDs) distribution in the height image by AFM is well correlated with images of the CL spectra atabout 440nm assigned to the spontaneous emission from the InGaN SQW. These results at leastmean an existence of non-radiative recombination centers within the InGaN SQW films. It has beenalso found that the average period of the peak-intensity and the FWHM change is smaller than that ofthe peak-wavelength change assigned to InN mole fluctuations. These results suggest that the excitondiffusion length of the spontaneous emission at about 440nm is not larger than the average period ofInN mole fluctuations in the InGaN SQW
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1309.pdf
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