ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC was grown on 4H-SiC (1100) substrates by sublimation boule growth, andtransmission electron microscopic investigation was carried out. Two basal-plane-dislocations in thesame basal plane (the BPD pair), whose dislocation line extend toward the [1100] growth direction,were observed as aligned along [0001]. The density of the BPD pairs along [0001] was in the sameorder with that of the stacking faults in the sample. A threading screw-dislocation was observed inbetween aligned BPD pairs. It is proposed that the interaction between stacking faults and threadingscrew-dislocations on the grown surface generates the BPD pairs. Since a high density of stackingfaults is inherent to the growth on the substrates perpendicular to (0001), keeping an atomically flatgrown surface is important to prevent the generation of the threading screw-dislocations, and thus tosuppress the generation of the BPD pairs in case of the growth on (1100) and/or (11 2 0) substrates
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.329.pdf
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