ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A sublimation epitaxial method, referred to as the Closed Space Technique (CST) wasadopted to produce AlN epitaxial layers. In this study, we report the surface morphology of AlNepitaxial layer grown on various substrates such as 3C-SiC (100), 4H-SiC (0001) with 8o off-axis(0001) plane tilted toward the 〈11 2 0〉 direction and on-axis 4H-SiC (0001). An average growth rateof AlN layer at 2350oC in 500 Torr of N2 was measured to be about 6μm/hr. While AlN layer grownon the 3C-SiC (100) substrate at 2350oC exhibited polycrystalline structure, AlN epitaxial layergrown on on-axis and off-axis 4H-SiC (0001) substrates had highly c-axis oriented epitaxial structure.In particular, the stacked structure of hexagonal plates was observed on off-axis substrate and the sizeof the hexagonal plates increased with growth time. Hexagonal plates were observed to be coalescedand the step-bunching was finally disappeared
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1285.pdf
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