ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A sublimation epitaxial method, referred to as the Closed Space Technique (CST) wasadopted to produce thick SiC epitaxial layers for power device applications. We aimed tosystematically investigate the dependence of SiC epilayer quality and growth rate during thesublimation growth using the CST method on various process parameters such as the growthtemperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growthrate (30 μm/h) exhibited a low etch pit density (EPD) of ~2000 /cm2 and a low micropipe density(MPD) of 2 /cm2. The etched surface of a SiC epitaxial layer grown with a high growth rate (above100 μm/h) contained a high EPD of ~3500 /cm2 and a high MPD of ~500 /cm2, which indicates thathigh growth rate aids the formation of dislocations and micropipes in the epitaxial layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.267.pdf
