ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Silicon carbide (SiC) is a wide band gap semiconductor being developed for hightemperature, high power, and high frequency device applications. For the manufacturing of SiC tosemiconductor substrate, many researchers have studied on the subject of SiC polishing. However,SiC faces many challenges for wafer preparation prior to epitaxial growth due to its high hardness andremarkable chemical inertness. A smooth and defect free substrate surface is important for obtaininggood epitaxial layers. Therefore, hybrid process, chemical mechanical polishing (CMP) has beenproposed to achieve epi-ready surface.In this paper, the material removal rate (MRR) is investigated to recognize how long the CMPprocess continues to remove a damaged layer by mechanical polishing using 100 nm sized diamond,and the authors tried to find the dependency of mechanical factors such as pressure, velocity andabrasive concentration using single abrasive slurry (SAS). Especially, the authors tried to get anepi-ready surface with mixed abrasive slurry (MAS). The addition of the 25nm sized diamond inMAS provided strong synergy between mechanical and chemical effects resulting in low subsurfacedamage. Through experiments with SAS and MAS, it was found that chemical effect (KOH based)was essential and atomic-bit mechanical removal was efficient to remove residual scratches in MAS.This paper concluded that SiC CMP mechanism was quite different from that of relatively softmaterial to achieve both of high quality surface and MRR
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.569.133.pdf
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