ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The effect of irradiation with protons, electrons, neutrons, x-ray radiation and gamma-rayphotons as well as with different ions on properties of starting SiC material and devices based on itwas studied. The rectifying properties of the diode structures, which degraded as a result of irradiationwith high energy particles, were recovered at higher operation temperatures. The transistor structureSiC-based detectors were realized with the signal amplification by a factor of tens under irradiation.The energy resolution of 0.34 %, commensurable with Si-detectors, has been achieved for SiCdetectors and is correct for all classes of short range ions. The maximum signal amplitudecorresponds, in SiC, to a mean electron-hole pair creation energy of 7.7 eV
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1473.pdf
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