ISSN:
1572-8978
Keywords:
Fluorocarbon films
;
low dielectric constant
;
inter-layer dielectric
;
thermal stability
;
poly imide
;
tetraisocyanatesilane
;
tetrafluoroethylene
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Technology
Notes:
Abstract Fluorinated amorphous carbon films were prepared from tetrafluoroethylene (TFE; C2F4) and tetraisocyanatesilane (TICS; Si(NCO)4) using an RF plasma enhanced chemical vapor deposition method for the purpose of application to inter layer low permittivity films used in large scale integrated circuits. Structure of the deposited films was investigated by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Adhesion characteristics were examined by a tape-peel method. Permittivity of the films was investigated from capacitance measurement on metal-insulator-semiconductor structure. The structural analysis revealed that the deposited films contained imide-like group $$( = N---C = {\text{O}})$$ in spite of the fact that TICS molecules contained isocyanate group $$(---N = C = {\text{O}})$$ . The films deposited under the flow ratio TICS/(TFE + TICS) = 70% showed permittivity of 2.3, good adhesion on silicon substrates, and higher thermal stability than the films deposited without TICS.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/B:PAPO.0000005942.82289.25
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